NL7504970A - MEMORY SWITCH WITH MNOS ELEMENTS. - Google Patents
MEMORY SWITCH WITH MNOS ELEMENTS.Info
- Publication number
- NL7504970A NL7504970A NL7504970A NL7504970A NL7504970A NL 7504970 A NL7504970 A NL 7504970A NL 7504970 A NL7504970 A NL 7504970A NL 7504970 A NL7504970 A NL 7504970A NL 7504970 A NL7504970 A NL 7504970A
- Authority
- NL
- Netherlands
- Prior art keywords
- memory switch
- mnos
- elements
- mnos elements
- switch
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19742420370 DE2420370A1 (en) | 1974-04-26 | 1974-04-26 | MEMORY CIRCUIT WITH MNOS ELEMENTS |
Publications (1)
Publication Number | Publication Date |
---|---|
NL7504970A true NL7504970A (en) | 1975-10-28 |
Family
ID=5914101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7504970A NL7504970A (en) | 1974-04-26 | 1975-04-25 | MEMORY SWITCH WITH MNOS ELEMENTS. |
Country Status (6)
Country | Link |
---|---|
JP (1) | JPS50155180A (en) |
BE (1) | BE828444A (en) |
DE (1) | DE2420370A1 (en) |
FR (1) | FR2269175A1 (en) |
IT (1) | IT1037412B (en) |
NL (1) | NL7504970A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5938655B2 (en) * | 1979-05-14 | 1984-09-18 | 日本放送協会 | semiconductor disk memory device |
GB2072417B (en) * | 1980-03-19 | 1983-12-14 | Plessey Co Ltd | Semiconductor memory element |
-
1974
- 1974-04-26 DE DE19742420370 patent/DE2420370A1/en active Pending
-
1975
- 1975-04-18 IT IT2247875A patent/IT1037412B/en active
- 1975-04-24 JP JP50050178A patent/JPS50155180A/ja active Pending
- 1975-04-24 FR FR7512802A patent/FR2269175A1/en not_active Withdrawn
- 1975-04-25 BE BE155826A patent/BE828444A/en unknown
- 1975-04-25 NL NL7504970A patent/NL7504970A/en unknown
Also Published As
Publication number | Publication date |
---|---|
BE828444A (en) | 1975-08-18 |
JPS50155180A (en) | 1975-12-15 |
IT1037412B (en) | 1979-11-10 |
DE2420370A1 (en) | 1975-11-06 |
FR2269175A1 (en) | 1975-11-21 |
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