GB2072417B - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
GB2072417B
GB2072417B GB8009224A GB8009224A GB2072417B GB 2072417 B GB2072417 B GB 2072417B GB 8009224 A GB8009224 A GB 8009224A GB 8009224 A GB8009224 A GB 8009224A GB 2072417 B GB2072417 B GB 2072417B
Authority
GB
United Kingdom
Prior art keywords
semiconductor memory
memory element
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB8009224A
Other versions
GB2072417A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Co Ltd
Original Assignee
Plessey Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Co Ltd filed Critical Plessey Co Ltd
Priority to GB8009224A priority Critical patent/GB2072417B/en
Priority to DE19813109031 priority patent/DE3109031A1/en
Priority to JP3928781A priority patent/JPS56148793A/en
Publication of GB2072417A publication Critical patent/GB2072417A/en
Application granted granted Critical
Publication of GB2072417B publication Critical patent/GB2072417B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)
GB8009224A 1980-03-19 1980-03-19 Semiconductor memory element Expired GB2072417B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB8009224A GB2072417B (en) 1980-03-19 1980-03-19 Semiconductor memory element
DE19813109031 DE3109031A1 (en) 1980-03-19 1981-03-10 "SEMICONDUCTOR MEMORY ELEMENT AND ARRANGEMENT MADE THEREOF"
JP3928781A JPS56148793A (en) 1980-03-19 1981-03-18 Semiconductor memory cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8009224A GB2072417B (en) 1980-03-19 1980-03-19 Semiconductor memory element

Publications (2)

Publication Number Publication Date
GB2072417A GB2072417A (en) 1981-09-30
GB2072417B true GB2072417B (en) 1983-12-14

Family

ID=10512197

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8009224A Expired GB2072417B (en) 1980-03-19 1980-03-19 Semiconductor memory element

Country Status (3)

Country Link
JP (1) JPS56148793A (en)
DE (1) DE3109031A1 (en)
GB (1) GB2072417B (en)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5721796B2 (en) * 1974-01-29 1982-05-10
DE2420370A1 (en) * 1974-04-26 1975-11-06 Siemens Ag MEMORY CIRCUIT WITH MNOS ELEMENTS
DE2450116C2 (en) * 1974-10-22 1976-09-16 Siemens AG, 1000 Berlin und 8000 München One transistor dynamic memory element for non-volatile memory and method for its operation

Also Published As

Publication number Publication date
GB2072417A (en) 1981-09-30
JPS56148793A (en) 1981-11-18
DE3109031A1 (en) 1981-12-24

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee