JPS56148793A - Semiconductor memory cell - Google Patents

Semiconductor memory cell

Info

Publication number
JPS56148793A
JPS56148793A JP3928781A JP3928781A JPS56148793A JP S56148793 A JPS56148793 A JP S56148793A JP 3928781 A JP3928781 A JP 3928781A JP 3928781 A JP3928781 A JP 3928781A JP S56148793 A JPS56148793 A JP S56148793A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
semiconductor
cell
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3928781A
Other languages
Japanese (ja)
Inventor
Ratsutaa Fuiritsupu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Plessey Overseas Ltd
Original Assignee
Plessey Overseas Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Plessey Overseas Ltd filed Critical Plessey Overseas Ltd
Publication of JPS56148793A publication Critical patent/JPS56148793A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
JP3928781A 1980-03-19 1981-03-18 Semiconductor memory cell Pending JPS56148793A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB8009224A GB2072417B (en) 1980-03-19 1980-03-19 Semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS56148793A true JPS56148793A (en) 1981-11-18

Family

ID=10512197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3928781A Pending JPS56148793A (en) 1980-03-19 1981-03-18 Semiconductor memory cell

Country Status (3)

Country Link
JP (1) JPS56148793A (en)
DE (1) DE3109031A1 (en)
GB (1) GB2072417B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106534A (en) * 1974-01-29 1975-08-22
JPS5165532A (en) * 1974-10-22 1976-06-07 Siemens Ag

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2420370A1 (en) * 1974-04-26 1975-11-06 Siemens Ag MEMORY CIRCUIT WITH MNOS ELEMENTS

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50106534A (en) * 1974-01-29 1975-08-22
JPS5165532A (en) * 1974-10-22 1976-06-07 Siemens Ag

Also Published As

Publication number Publication date
GB2072417B (en) 1983-12-14
GB2072417A (en) 1981-09-30
DE3109031A1 (en) 1981-12-24

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