AT376845B - MEMORY FIELD EFFECT TRANSISTOR - Google Patents

MEMORY FIELD EFFECT TRANSISTOR

Info

Publication number
AT376845B
AT376845B AT629275A AT629275A AT376845B AT 376845 B AT376845 B AT 376845B AT 629275 A AT629275 A AT 629275A AT 629275 A AT629275 A AT 629275A AT 376845 B AT376845 B AT 376845B
Authority
AT
Austria
Prior art keywords
field effect
effect transistor
memory field
memory
transistor
Prior art date
Application number
AT629275A
Other languages
German (de)
Other versions
ATA629275A (en
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of ATA629275A publication Critical patent/ATA629275A/en
Application granted granted Critical
Publication of AT376845B publication Critical patent/AT376845B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
AT629275A 1974-09-20 1975-08-13 MEMORY FIELD EFFECT TRANSISTOR AT376845B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (en) 1974-09-20 1974-09-20 Storage field effect transistor

Publications (2)

Publication Number Publication Date
ATA629275A ATA629275A (en) 1984-05-15
AT376845B true AT376845B (en) 1985-01-10

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
AT629275A AT376845B (en) 1974-09-20 1975-08-13 MEMORY FIELD EFFECT TRANSISTOR

Country Status (10)

Country Link
JP (1) JPS5157291A (en)
AT (1) AT376845B (en)
BE (1) BE833632A (en)
CH (1) CH591763A5 (en)
DK (1) DK141545C (en)
FR (1) FR2285719A1 (en)
GB (1) GB1483555A (en)
IT (1) IT1042654B (en)
NL (1) NL163373C (en)
SE (1) SE402186B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826846Y2 (en) * 1978-10-26 1983-06-10 三菱自動車工業株式会社 Guide mounting structure for seat belt support member
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS5887877A (en) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd Semiconductor nonvolatile memory
JPH06252392A (en) * 1993-03-01 1994-09-09 Nec Corp Field effect transistor
KR0149571B1 (en) * 1995-05-04 1998-10-01 김주용 Transistor
JP2016006894A (en) * 2015-08-03 2016-01-14 スパンション エルエルシー Semiconductor device and manufacturing method of the same

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419766A (en) * 1963-06-24 1968-12-31 Hitachi Ltd Method of producing insulated gate field effect transistors with improved characteristics
DE2126303A1 (en) * 1970-06-01 1971-12-16 Rca Corp Variable gain field effect transistor having an insulated gate electrode
DE2129181A1 (en) * 1970-06-15 1971-12-23 Intel Corp Floating gate solid state memory device
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
DE2201150A1 (en) * 1971-01-14 1972-08-10 Rca Corp Charge-coupled semiconductor circuit
DE2341822A1 (en) * 1972-09-07 1974-03-14 Philips Nv DIGITAL SLIDING REGISTER

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3419766A (en) * 1963-06-24 1968-12-31 Hitachi Ltd Method of producing insulated gate field effect transistors with improved characteristics
DE2126303A1 (en) * 1970-06-01 1971-12-16 Rca Corp Variable gain field effect transistor having an insulated gate electrode
DE2129181A1 (en) * 1970-06-15 1971-12-23 Intel Corp Floating gate solid state memory device
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
DE2201150A1 (en) * 1971-01-14 1972-08-10 Rca Corp Charge-coupled semiconductor circuit
DE2341822A1 (en) * 1972-09-07 1974-03-14 Philips Nv DIGITAL SLIDING REGISTER

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL SC-7, NR.5, OKT. 1972, S.369-375. *
PROCEEDINGS OF THE 4TH CONFERENCE ON SOLID STATE DEVICES, TOKIO, 1972, SUPPLEMENT TO THE JOURNAL OF THE JAPAN SOCIETY OF APPLIED PHYSICS, VOL. 42. 1973, S.158-166 *
SOLID STATE ELECTRONICS, VOL.16, 1973, S.483-490. *

Also Published As

Publication number Publication date
IT1042654B (en) 1980-01-30
DK141545B (en) 1980-04-14
NL163373C (en) 1980-08-15
DK423275A (en) 1976-03-21
NL7510942A (en) 1976-03-23
FR2285719A1 (en) 1976-04-16
JPS5157291A (en) 1976-05-19
FR2285719B1 (en) 1979-03-23
DK141545C (en) 1980-09-29
JPS5528554B2 (en) 1980-07-29
CH591763A5 (en) 1977-09-30
BE833632A (en) 1976-03-19
GB1483555A (en) 1977-08-24
ATA629275A (en) 1984-05-15
SE7510483L (en) 1976-03-22
SE402186B (en) 1978-06-19

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee