SE7510483L - BOLD WITH INSULATED, FLOATING STEERING - Google Patents

BOLD WITH INSULATED, FLOATING STEERING

Info

Publication number
SE7510483L
SE7510483L SE7510483A SE7510483A SE7510483L SE 7510483 L SE7510483 L SE 7510483L SE 7510483 A SE7510483 A SE 7510483A SE 7510483 A SE7510483 A SE 7510483A SE 7510483 L SE7510483 L SE 7510483L
Authority
SE
Sweden
Prior art keywords
gate
channel
charges
bold
insulated
Prior art date
Application number
SE7510483A
Other languages
Swedish (sv)
Other versions
SE402186B (en
Inventor
B Rossler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7510483L publication Critical patent/SE7510483L/en
Publication of SE402186B publication Critical patent/SE402186B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)

Abstract

1483555 Field effect transistors SIEMENS AG 22 Aug 1975 [20 Sept 1974] 34866/75 Heading H1K A FET for use as a storage element has a floating gate G and a channel K containing an inhomogeneous region V which accelerates charges into the gate G which charges up accordingly. The inhomogeneity may be produced by one or more tapered or constricted channel zones produced by shaping the gate electrode G appropriately and/or by variations in the thickness of the gate insulation A. The channel K may be P or N type and the transistor operated in the enhancement or depletion mode, and an external electrode GHA may be capacitively coupled to the gate electrode G.
SE7510483A 1974-09-20 1975-09-18 FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD SE402186B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (en) 1974-09-20 1974-09-20 Storage field effect transistor

Publications (2)

Publication Number Publication Date
SE7510483L true SE7510483L (en) 1976-03-22
SE402186B SE402186B (en) 1978-06-19

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510483A SE402186B (en) 1974-09-20 1975-09-18 FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD

Country Status (10)

Country Link
JP (1) JPS5157291A (en)
AT (1) AT376845B (en)
BE (1) BE833632A (en)
CH (1) CH591763A5 (en)
DK (1) DK141545C (en)
FR (1) FR2285719A1 (en)
GB (1) GB1483555A (en)
IT (1) IT1042654B (en)
NL (1) NL163373C (en)
SE (1) SE402186B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826846Y2 (en) * 1978-10-26 1983-06-10 三菱自動車工業株式会社 Guide mounting structure for seat belt support member
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS5887877A (en) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd Semiconductor nonvolatile memory
JPH06252392A (en) * 1993-03-01 1994-09-09 Nec Corp Field effect transistor
KR0149571B1 (en) * 1995-05-04 1998-10-01 김주용 Transistor
JP2016006894A (en) * 2015-08-03 2016-01-14 スパンション エルエルシー Semiconductor device and manufacturing method of the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071384A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Method for manufacture of field effect semiconductor devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (en) * 1972-09-07 1974-03-11

Also Published As

Publication number Publication date
ATA629275A (en) 1984-05-15
NL163373C (en) 1980-08-15
CH591763A5 (en) 1977-09-30
DK141545B (en) 1980-04-14
BE833632A (en) 1976-03-19
DK423275A (en) 1976-03-21
JPS5528554B2 (en) 1980-07-29
IT1042654B (en) 1980-01-30
JPS5157291A (en) 1976-05-19
NL7510942A (en) 1976-03-23
FR2285719B1 (en) 1979-03-23
SE402186B (en) 1978-06-19
GB1483555A (en) 1977-08-24
FR2285719A1 (en) 1976-04-16
DK141545C (en) 1980-09-29
AT376845B (en) 1985-01-10

Similar Documents

Publication Publication Date Title
CA1024266A (en) Deep depletion insulated gate field effect transistors
ES419843A1 (en) Complementary field effect transistors having p doped silicon gates
GB1396198A (en) Transistors
JPS5232277A (en) Insulated gate type field-effect transistor
SE7510483L (en) BOLD WITH INSULATED, FLOATING STEERING
JPS5323577A (en) Complementary type insulated gate effect transistor
JPS51114074A (en) Insulation gate type field effect transistor
DE3169122D1 (en) Process for the manufacture of field-effect transistors with selfaligned gate electrode, and transistors made by this process
JPS5267982A (en) Manufacture of schottky barrier type field effect transistor
JPS5213782A (en) Semiconductor non-vol atile memory unit
NL7506288A (en) COMPLEMENTARY FIELD EFFECT TRANSISTOR SYSTEM WITH INSULATED GATE ELECTRODE.
JPS5248475A (en) Semiconductor device
AT339373B (en) METHOD FOR MANUFACTURING P-CHANNEL FIELD EFFECT TRANSISTORS WITH INSULATED GATE ELECTRODE IN THIN-LAYER TECHNOLOGY
JPS5245280A (en) Field effect transistor of schottky barrier type
JPS5263686A (en) Non-voltatile semiconductor memory device
JPS51141582A (en) Field effect transistor with high withstand voltage
JPS5279881A (en) Production of gaas schottky barrier gate type field effect transistor
JPS53120281A (en) Insulated gate field effect transistor
JPS5348679A (en) Complementary type mos field effect transistor
JPS522157A (en) Mis output circuit
JPS5323555A (en) Complemen tary mos integrated circuit
JPS5245286A (en) Manufcturing method of field effect transistor of silicon gate type
CA1008186A (en) Method of manufacture of mos transistor with gate connected to source or drain
JPS5219084A (en) Production method of field effect transistor which uses ion injection method
JPS538077A (en) Field effect transistor and its production

Legal Events

Date Code Title Description
NUG Patent has lapsed

Ref document number: 7510483-6

Effective date: 19891002

Format of ref document f/p: F