NL163373C - FIELD EFFECT TRANSISTOR WITH AN N-TYPE INVERSION CHANNEL EQUIPPED WITH A FLOATING MEMORY ELECTRODE. - Google Patents
FIELD EFFECT TRANSISTOR WITH AN N-TYPE INVERSION CHANNEL EQUIPPED WITH A FLOATING MEMORY ELECTRODE.Info
- Publication number
- NL163373C NL163373C NL7510942A NL7510942A NL163373C NL 163373 C NL163373 C NL 163373C NL 7510942 A NL7510942 A NL 7510942A NL 7510942 A NL7510942 A NL 7510942A NL 163373 C NL163373 C NL 163373C
- Authority
- NL
- Netherlands
- Prior art keywords
- field effect
- effect transistor
- inversion channel
- type inversion
- memory electrode
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
- G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
- G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
- G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Non-Volatile Memory (AREA)
- Junction Field-Effect Transistors (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2445079A DE2445079C3 (en) | 1974-09-20 | 1974-09-20 | Storage field effect transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
NL7510942A NL7510942A (en) | 1976-03-23 |
NL163373C true NL163373C (en) | 1980-08-15 |
Family
ID=5926358
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
NL7510942A NL163373C (en) | 1974-09-20 | 1975-09-17 | FIELD EFFECT TRANSISTOR WITH AN N-TYPE INVERSION CHANNEL EQUIPPED WITH A FLOATING MEMORY ELECTRODE. |
Country Status (10)
Country | Link |
---|---|
JP (1) | JPS5157291A (en) |
AT (1) | AT376845B (en) |
BE (1) | BE833632A (en) |
CH (1) | CH591763A5 (en) |
DK (1) | DK141545C (en) |
FR (1) | FR2285719A1 (en) |
GB (1) | GB1483555A (en) |
IT (1) | IT1042654B (en) |
NL (1) | NL163373C (en) |
SE (1) | SE402186B (en) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5826846Y2 (en) * | 1978-10-26 | 1983-06-10 | 三菱自動車工業株式会社 | Guide mounting structure for seat belt support member |
JPS5857750A (en) * | 1981-10-01 | 1983-04-06 | Seiko Instr & Electronics Ltd | Non-volatile semiconductor memory |
JPS5887877A (en) * | 1981-11-19 | 1983-05-25 | Sanyo Electric Co Ltd | Semiconductor nonvolatile memory |
JPH06252392A (en) * | 1993-03-01 | 1994-09-09 | Nec Corp | Field effect transistor |
KR0149571B1 (en) * | 1995-05-04 | 1998-10-01 | 김주용 | Transistor |
JP2016006894A (en) * | 2015-08-03 | 2016-01-14 | スパンション エルエルシー | Semiconductor device and manufacturing method of the same |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1071383A (en) * | 1963-06-24 | 1967-06-07 | Hitachi Ltd | Field-effect semiconductor devices |
US3745426A (en) * | 1970-06-01 | 1973-07-10 | Rca Corp | Insulated gate field-effect transistor with variable gain |
US3660819A (en) * | 1970-06-15 | 1972-05-02 | Intel Corp | Floating gate transistor and method for charging and discharging same |
AU461729B2 (en) * | 1971-01-14 | 1975-06-05 | Rca Corporation | Charge coupled circuits |
NL7212151A (en) * | 1972-09-07 | 1974-03-11 |
-
1975
- 1975-08-13 AT AT629275A patent/AT376845B/en not_active IP Right Cessation
- 1975-08-22 GB GB3486675A patent/GB1483555A/en not_active Expired
- 1975-09-16 FR FR7528362A patent/FR2285719A1/en active Granted
- 1975-09-16 CH CH1198175A patent/CH591763A5/xx not_active IP Right Cessation
- 1975-09-17 NL NL7510942A patent/NL163373C/en not_active IP Right Cessation
- 1975-09-18 SE SE7510483A patent/SE402186B/en not_active IP Right Cessation
- 1975-09-18 IT IT2736975A patent/IT1042654B/en active
- 1975-09-19 BE BE160217A patent/BE833632A/en not_active IP Right Cessation
- 1975-09-19 DK DK423275A patent/DK141545C/en not_active IP Right Cessation
- 1975-09-19 JP JP11352375A patent/JPS5157291A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
IT1042654B (en) | 1980-01-30 |
DK141545B (en) | 1980-04-14 |
DK423275A (en) | 1976-03-21 |
NL7510942A (en) | 1976-03-23 |
FR2285719A1 (en) | 1976-04-16 |
JPS5157291A (en) | 1976-05-19 |
FR2285719B1 (en) | 1979-03-23 |
DK141545C (en) | 1980-09-29 |
JPS5528554B2 (en) | 1980-07-29 |
CH591763A5 (en) | 1977-09-30 |
AT376845B (en) | 1985-01-10 |
BE833632A (en) | 1976-03-19 |
GB1483555A (en) | 1977-08-24 |
ATA629275A (en) | 1984-05-15 |
SE7510483L (en) | 1976-03-22 |
SE402186B (en) | 1978-06-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
V1 | Lapsed because of non-payment of the annual fee |