NL158324B - SEMI-CONDUCTOR DEVICE WITH A FIELD EFFECT TRANSISTOR TO BE PROTECTED AGAINST OVER VOLTAGES WITH INSULATED CONTROL ELECTRODE. - Google Patents

SEMI-CONDUCTOR DEVICE WITH A FIELD EFFECT TRANSISTOR TO BE PROTECTED AGAINST OVER VOLTAGES WITH INSULATED CONTROL ELECTRODE.

Info

Publication number
NL158324B
NL158324B NL7301309A NL7301309A NL158324B NL 158324 B NL158324 B NL 158324B NL 7301309 A NL7301309 A NL 7301309A NL 7301309 A NL7301309 A NL 7301309A NL 158324 B NL158324 B NL 158324B
Authority
NL
Netherlands
Prior art keywords
semi
field effect
effect transistor
control electrode
protected against
Prior art date
Application number
NL7301309A
Other languages
Dutch (nl)
Other versions
NL7301309A (en
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of NL7301309A publication Critical patent/NL7301309A/xx
Publication of NL158324B publication Critical patent/NL158324B/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
NL7301309A 1972-01-31 1973-01-30 SEMI-CONDUCTOR DEVICE WITH A FIELD EFFECT TRANSISTOR TO BE PROTECTED AGAINST OVER VOLTAGES WITH INSULATED CONTROL ELECTRODE. NL158324B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (en) 1972-01-31 1972-01-31

Publications (2)

Publication Number Publication Date
NL7301309A NL7301309A (en) 1973-08-02
NL158324B true NL158324B (en) 1978-10-16

Family

ID=11771233

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7301309A NL158324B (en) 1972-01-31 1973-01-30 SEMI-CONDUCTOR DEVICE WITH A FIELD EFFECT TRANSISTOR TO BE PROTECTED AGAINST OVER VOLTAGES WITH INSULATED CONTROL ELECTRODE.

Country Status (7)

Country Link
JP (1) JPS5132511B2 (en)
CA (1) CA999654A (en)
CH (1) CH552285A (en)
FR (1) FR2170022B1 (en)
GB (1) GB1419542A (en)
IT (1) IT977703B (en)
NL (1) NL158324B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5226881U (en) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
US4751473A (en) * 1985-11-05 1988-06-14 Mitsubishi Denki Kabushiki Kaisha FET amplifier circuit
US4737733A (en) * 1986-10-29 1988-04-12 Rca Corporation Overdrive control of FET power amplifier
JPH0693613B2 (en) * 1987-01-16 1994-11-16 三菱電機株式会社 MIS transistor circuit
JPS63208324A (en) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp Semiconductor integrated circuit device
US8804290B2 (en) * 2012-01-17 2014-08-12 Texas Instruments Incorporated Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET

Also Published As

Publication number Publication date
JPS5132511B2 (en) 1976-09-13
DE2304710A1 (en) 1973-08-09
CH552285A (en) 1974-07-31
GB1419542A (en) 1975-12-31
JPS4881485A (en) 1973-10-31
IT977703B (en) 1974-09-20
NL7301309A (en) 1973-08-02
FR2170022B1 (en) 1976-04-30
DE2304710B2 (en) 1975-07-03
CA999654A (en) 1976-11-09
FR2170022A1 (en) 1973-09-14

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Legal Events

Date Code Title Description
NL80 Abbreviated name of patent owner mentioned of already nullified patent

Owner name: MITSUB DENKI

V4 Lapsed because of reaching the maxim lifetime of a patent