FR2170022A1 - - Google Patents

Info

Publication number
FR2170022A1
FR2170022A1 FR7303224A FR7303224A FR2170022A1 FR 2170022 A1 FR2170022 A1 FR 2170022A1 FR 7303224 A FR7303224 A FR 7303224A FR 7303224 A FR7303224 A FR 7303224A FR 2170022 A1 FR2170022 A1 FR 2170022A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7303224A
Other languages
French (fr)
Other versions
FR2170022B1 (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of FR2170022A1 publication Critical patent/FR2170022A1/fr
Application granted granted Critical
Publication of FR2170022B1 publication Critical patent/FR2170022B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/52—Circuit arrangements for protecting such amplifiers
    • H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Protection Of Static Devices (AREA)
FR7303224A 1972-01-31 1973-01-30 Expired FR2170022B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP47011194A JPS5132511B2 (en) 1972-01-31 1972-01-31

Publications (2)

Publication Number Publication Date
FR2170022A1 true FR2170022A1 (en) 1973-09-14
FR2170022B1 FR2170022B1 (en) 1976-04-30

Family

ID=11771233

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7303224A Expired FR2170022B1 (en) 1972-01-31 1973-01-30

Country Status (7)

Country Link
JP (1) JPS5132511B2 (en)
CA (1) CA999654A (en)
CH (1) CH552285A (en)
FR (1) FR2170022B1 (en)
GB (1) GB1419542A (en)
IT (1) IT977703B (en)
NL (1) NL158324B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
FR2589648A1 (en) * 1985-11-05 1987-05-07 Mitsubishi Electric Corp FIELD EFFECT TRANSISTOR AMPLIFIER CIRCUIT
FR2606230A1 (en) * 1986-10-29 1988-05-06 Rca Corp OVERLOAD CONTROL FOR FET POWER AMPLIFIER

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5226881U (en) * 1975-08-14 1977-02-24
JPS53121579A (en) * 1977-03-31 1978-10-24 Toshiba Corp Semiconductor integrated circuit
JPH0693613B2 (en) * 1987-01-16 1994-11-16 三菱電機株式会社 MIS transistor circuit
JPS63208324A (en) * 1987-02-24 1988-08-29 Mitsubishi Electric Corp Semiconductor integrated circuit device
US8804290B2 (en) * 2012-01-17 2014-08-12 Texas Instruments Incorporated Electrostatic discharge protection circuit having buffer stage FET with thicker gate oxide than common-source FET

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51111042A (en) * 1975-03-26 1976-10-01 Hitachi Ltd Gate circuit
JPS5550422B2 (en) * 1975-03-26 1980-12-18
FR2589648A1 (en) * 1985-11-05 1987-05-07 Mitsubishi Electric Corp FIELD EFFECT TRANSISTOR AMPLIFIER CIRCUIT
FR2606230A1 (en) * 1986-10-29 1988-05-06 Rca Corp OVERLOAD CONTROL FOR FET POWER AMPLIFIER

Also Published As

Publication number Publication date
NL7301309A (en) 1973-08-02
IT977703B (en) 1974-09-20
CH552285A (en) 1974-07-31
CA999654A (en) 1976-11-09
DE2304710A1 (en) 1973-08-09
GB1419542A (en) 1975-12-31
NL158324B (en) 1978-10-16
DE2304710B2 (en) 1975-07-03
JPS5132511B2 (en) 1976-09-13
JPS4881485A (en) 1973-10-31
FR2170022B1 (en) 1976-04-30

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