SE402186B - FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD - Google Patents

FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD

Info

Publication number
SE402186B
SE402186B SE7510483A SE7510483A SE402186B SE 402186 B SE402186 B SE 402186B SE 7510483 A SE7510483 A SE 7510483A SE 7510483 A SE7510483 A SE 7510483A SE 402186 B SE402186 B SE 402186B
Authority
SE
Sweden
Prior art keywords
board
atminstone
namely
completely surrounded
floating memory
Prior art date
Application number
SE7510483A
Other languages
Swedish (sv)
Other versions
SE7510483L (en
Inventor
B Rossler
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of SE7510483L publication Critical patent/SE7510483L/en
Publication of SE402186B publication Critical patent/SE402186B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
SE7510483A 1974-09-20 1975-09-18 FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD SE402186B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (en) 1974-09-20 1974-09-20 Storage field effect transistor

Publications (2)

Publication Number Publication Date
SE7510483L SE7510483L (en) 1976-03-22
SE402186B true SE402186B (en) 1978-06-19

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
SE7510483A SE402186B (en) 1974-09-20 1975-09-18 FAT ELEMENT WITH ATMINSTONE A BOARD, NAMELY ONE OF AN INSULATOR COMPLETELY SURROUNDED FLOATING MEMORY BOARD

Country Status (10)

Country Link
JP (1) JPS5157291A (en)
AT (1) AT376845B (en)
BE (1) BE833632A (en)
CH (1) CH591763A5 (en)
DK (1) DK141545C (en)
FR (1) FR2285719A1 (en)
GB (1) GB1483555A (en)
IT (1) IT1042654B (en)
NL (1) NL163373C (en)
SE (1) SE402186B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5826846Y2 (en) * 1978-10-26 1983-06-10 三菱自動車工業株式会社 Guide mounting structure for seat belt support member
JPS5857750A (en) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd Non-volatile semiconductor memory
JPS5887877A (en) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd Semiconductor nonvolatile memory
JPH06252392A (en) * 1993-03-01 1994-09-09 Nec Corp Field effect transistor
KR0149571B1 (en) * 1995-05-04 1998-10-01 김주용 Transistor
JP2016006894A (en) * 2015-08-03 2016-01-14 スパンション エルエルシー Semiconductor device and manufacturing method of the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (en) * 1972-09-07 1974-03-11

Also Published As

Publication number Publication date
NL163373C (en) 1980-08-15
JPS5528554B2 (en) 1980-07-29
AT376845B (en) 1985-01-10
ATA629275A (en) 1984-05-15
DK141545C (en) 1980-09-29
IT1042654B (en) 1980-01-30
GB1483555A (en) 1977-08-24
SE7510483L (en) 1976-03-22
FR2285719B1 (en) 1979-03-23
CH591763A5 (en) 1977-09-30
FR2285719A1 (en) 1976-04-16
NL7510942A (en) 1976-03-23
JPS5157291A (en) 1976-05-19
BE833632A (en) 1976-03-19
DK423275A (en) 1976-03-21
DK141545B (en) 1980-04-14

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