JPS51147135A - Non-voratile semiconductor memory - Google Patents

Non-voratile semiconductor memory

Info

Publication number
JPS51147135A
JPS51147135A JP7158575A JP7158575A JPS51147135A JP S51147135 A JPS51147135 A JP S51147135A JP 7158575 A JP7158575 A JP 7158575A JP 7158575 A JP7158575 A JP 7158575A JP S51147135 A JPS51147135 A JP S51147135A
Authority
JP
Japan
Prior art keywords
voratile
semiconductor memory
enabled
writing
short
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7158575A
Other languages
Japanese (ja)
Inventor
Shuichi Oya
Masanori Kikuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7158575A priority Critical patent/JPS51147135A/en
Publication of JPS51147135A publication Critical patent/JPS51147135A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:Long time memory holding enabled by such writing-in as to short the gate of floating gate type FET to source region.
JP7158575A 1975-06-12 1975-06-12 Non-voratile semiconductor memory Pending JPS51147135A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7158575A JPS51147135A (en) 1975-06-12 1975-06-12 Non-voratile semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7158575A JPS51147135A (en) 1975-06-12 1975-06-12 Non-voratile semiconductor memory

Publications (1)

Publication Number Publication Date
JPS51147135A true JPS51147135A (en) 1976-12-17

Family

ID=13464900

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7158575A Pending JPS51147135A (en) 1975-06-12 1975-06-12 Non-voratile semiconductor memory

Country Status (1)

Country Link
JP (1) JPS51147135A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0682370A1 (en) * 1994-05-13 1995-11-15 Canon Kabushiki Kaisha Storage device
EP0727822A2 (en) * 1995-02-14 1996-08-21 Canon Kabushiki Kaisha Semiconductor memory device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0682370A1 (en) * 1994-05-13 1995-11-15 Canon Kabushiki Kaisha Storage device
US5808336A (en) * 1994-05-13 1998-09-15 Canon Kabushiki Kaisha Storage device
EP0727822A2 (en) * 1995-02-14 1996-08-21 Canon Kabushiki Kaisha Semiconductor memory device
EP0727822A3 (en) * 1995-02-14 1996-10-23 Canon Kk Semiconductor memory device
US5942779A (en) * 1995-02-14 1999-08-24 Canon Kabushiki Kaisha Reduced-cost, flash memory element and memory apparatus

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