JPS53122374A - Manufacture for double gate consitution semiconductor device - Google Patents

Manufacture for double gate consitution semiconductor device

Info

Publication number
JPS53122374A
JPS53122374A JP3730377A JP3730377A JPS53122374A JP S53122374 A JPS53122374 A JP S53122374A JP 3730377 A JP3730377 A JP 3730377A JP 3730377 A JP3730377 A JP 3730377A JP S53122374 A JPS53122374 A JP S53122374A
Authority
JP
Japan
Prior art keywords
manufacture
consitution
double gate
semiconductor device
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3730377A
Other languages
Japanese (ja)
Inventor
Izumi Tanaka
Kazunari Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP3730377A priority Critical patent/JPS53122374A/en
Publication of JPS53122374A publication Critical patent/JPS53122374A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Weting (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To manufacture the evice of double gate constitution having high performance, by forming the SiO2 thin film of high dielectric strength through the addition of impurity to the floating gate in advance.
JP3730377A 1977-03-31 1977-03-31 Manufacture for double gate consitution semiconductor device Pending JPS53122374A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3730377A JPS53122374A (en) 1977-03-31 1977-03-31 Manufacture for double gate consitution semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3730377A JPS53122374A (en) 1977-03-31 1977-03-31 Manufacture for double gate consitution semiconductor device

Publications (1)

Publication Number Publication Date
JPS53122374A true JPS53122374A (en) 1978-10-25

Family

ID=12493927

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3730377A Pending JPS53122374A (en) 1977-03-31 1977-03-31 Manufacture for double gate consitution semiconductor device

Country Status (1)

Country Link
JP (1) JPS53122374A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128975A (en) * 1981-02-02 1982-08-10 Toshiba Corp Manufacture of semiconductor nonvolatile memory storage
US7928445B2 (en) 2007-03-28 2011-04-19 Ricoh Company, Ltd. Semiconductor MOS transistor device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152281A (en) * 1974-11-01 1976-05-08 Hitachi Ltd
JPS5389686A (en) * 1977-01-18 1978-08-07 Toshiba Corp Production of semiconductor memory element

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5152281A (en) * 1974-11-01 1976-05-08 Hitachi Ltd
JPS5389686A (en) * 1977-01-18 1978-08-07 Toshiba Corp Production of semiconductor memory element

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57128975A (en) * 1981-02-02 1982-08-10 Toshiba Corp Manufacture of semiconductor nonvolatile memory storage
US7928445B2 (en) 2007-03-28 2011-04-19 Ricoh Company, Ltd. Semiconductor MOS transistor device

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