JPS5397381A - Nonvoltile semiconductor memory - Google Patents
Nonvoltile semiconductor memoryInfo
- Publication number
- JPS5397381A JPS5397381A JP1163877A JP1163877A JPS5397381A JP S5397381 A JPS5397381 A JP S5397381A JP 1163877 A JP1163877 A JP 1163877A JP 1163877 A JP1163877 A JP 1163877A JP S5397381 A JPS5397381 A JP S5397381A
- Authority
- JP
- Japan
- Prior art keywords
- nonvoltile
- semiconductor memory
- density
- writing
- securing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000002347 injection Methods 0.000 abstract 1
- 239000007924 injection Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To increase both the writing and the reading velocity, by pushing in the high-density ion injection layer through the lateral diffusion only form the drain side using the floating gate as the mask and securing a density slope in the channel direction.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1163877A JPS5397381A (en) | 1977-02-07 | 1977-02-07 | Nonvoltile semiconductor memory |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1163877A JPS5397381A (en) | 1977-02-07 | 1977-02-07 | Nonvoltile semiconductor memory |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5397381A true JPS5397381A (en) | 1978-08-25 |
Family
ID=11783474
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1163877A Pending JPS5397381A (en) | 1977-02-07 | 1977-02-07 | Nonvoltile semiconductor memory |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5397381A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664469A (en) * | 1979-09-04 | 1981-06-01 | Texas Instruments Inc | Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same |
JPS62276878A (en) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | Semiconductor memory |
JPH0354869A (en) * | 1989-07-21 | 1991-03-08 | Seiko Instr Inc | Semiconductor non-volatile memory |
US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
US5472891A (en) * | 1986-05-26 | 1995-12-05 | Hitachi, Ltd. | Method of manufacturing a semiconductor device |
US5904518A (en) * | 1988-11-09 | 1999-05-18 | Hitachi, Ltd. | Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells |
US6236085B1 (en) | 1996-11-11 | 2001-05-22 | Denso Corporation | Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate |
-
1977
- 1977-02-07 JP JP1163877A patent/JPS5397381A/en active Pending
Cited By (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5664469A (en) * | 1979-09-04 | 1981-06-01 | Texas Instruments Inc | Programmable nonnvolatile floating gate type semiconductor memory device and method of manufacturing same |
US5472891A (en) * | 1986-05-26 | 1995-12-05 | Hitachi, Ltd. | Method of manufacturing a semiconductor device |
JPS62276878A (en) * | 1986-05-26 | 1987-12-01 | Hitachi Ltd | Semiconductor memory |
US6451643B2 (en) | 1988-11-09 | 2002-09-17 | Hitachi, Ltd. | Method of manufacturing a semiconductor device having non-volatile memory cell portion with single transistor type memory cells and peripheral portion with MISFETs |
US5904518A (en) * | 1988-11-09 | 1999-05-18 | Hitachi, Ltd. | Method of manufacturing a semiconductor IC device having single transistor type nonvolatile memory cells |
US6255690B1 (en) | 1988-11-09 | 2001-07-03 | Hitachi, Ltd. | Non-volatile semiconductor memory device |
US6777282B2 (en) | 1988-11-09 | 2004-08-17 | Renesas Technology Corp. | Method of manufacturing a semiconductor memory device having a memory cell portion including MISFETs with a floating gate and a peripheral circuit portion with MISFETs |
US6960501B2 (en) | 1988-11-09 | 2005-11-01 | Renesas Technology Corp. | Method of manufacturing a semiconductor memory device having a non-volatile memory cell portion with single misfet transistor type memory cells and a peripheral circuit portion with misfets |
US7071050B2 (en) | 1988-11-09 | 2006-07-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having single-element type non-volatile memory elements |
US7399667B2 (en) | 1988-11-09 | 2008-07-15 | Renesas Technology Corp. | Method of manufacturing a semiconductor integrated circuit device having single-element type non-volatile memory elements |
JPH0354869A (en) * | 1989-07-21 | 1991-03-08 | Seiko Instr Inc | Semiconductor non-volatile memory |
US5424567A (en) * | 1991-05-15 | 1995-06-13 | North American Philips Corporation | Protected programmable transistor with reduced parasitic capacitances and method of fabrication |
US5486480A (en) * | 1991-05-15 | 1996-01-23 | North American Philips Corporation | Method of fabrication of protected programmable transistor with reduced parasitic capacitances |
US6236085B1 (en) | 1996-11-11 | 2001-05-22 | Denso Corporation | Semiconductor memory device having high-concentration region around electric-field moderating layer in substrate |
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