JPS5440043A - Semiconductor memory - Google Patents

Semiconductor memory

Info

Publication number
JPS5440043A
JPS5440043A JP10654177A JP10654177A JPS5440043A JP S5440043 A JPS5440043 A JP S5440043A JP 10654177 A JP10654177 A JP 10654177A JP 10654177 A JP10654177 A JP 10654177A JP S5440043 A JPS5440043 A JP S5440043A
Authority
JP
Japan
Prior art keywords
gate
semiconductor memory
selecting
capacity
inter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10654177A
Other languages
Japanese (ja)
Inventor
Yuji Takeshita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP10654177A priority Critical patent/JPS5440043A/en
Publication of JPS5440043A publication Critical patent/JPS5440043A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:To secure the 1-element /1-cell formation by forming the address selecting gate and the control gate separately on the floating gate and also selecting the inter-gate capacity and the gate-channel capacity, and thus to realize a high-density integration.
JP10654177A 1977-09-05 1977-09-05 Semiconductor memory Pending JPS5440043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10654177A JPS5440043A (en) 1977-09-05 1977-09-05 Semiconductor memory

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10654177A JPS5440043A (en) 1977-09-05 1977-09-05 Semiconductor memory

Publications (1)

Publication Number Publication Date
JPS5440043A true JPS5440043A (en) 1979-03-28

Family

ID=14436224

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10654177A Pending JPS5440043A (en) 1977-09-05 1977-09-05 Semiconductor memory

Country Status (1)

Country Link
JP (1) JPS5440043A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084745A (en) * 1983-04-18 1992-01-28 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate
US5498888A (en) * 1993-03-19 1996-03-12 Rohm Co., Ltd. Semiconductor device and method for processing multiple input signals
JPH09330989A (en) * 1996-03-11 1997-12-22 Hyundai Electron Ind Co Ltd Flush eeprom cell and manufacture thereof
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same
US6188121B1 (en) * 1997-07-23 2001-02-13 Sgs-Thomson Microelectronics S.R.L. High voltage capacitor

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5084745A (en) * 1983-04-18 1992-01-28 Kabushiki Kaisha Toshiba Semiconductor memory device having a floating gate
US5498888A (en) * 1993-03-19 1996-03-12 Rohm Co., Ltd. Semiconductor device and method for processing multiple input signals
US5739568A (en) * 1994-11-28 1998-04-14 Motorola, Inc. Non-volatile memory having a cell applying to multi-bit data by double layered floating gate architecture and programming method for the same
JPH09330989A (en) * 1996-03-11 1997-12-22 Hyundai Electron Ind Co Ltd Flush eeprom cell and manufacture thereof
US6188121B1 (en) * 1997-07-23 2001-02-13 Sgs-Thomson Microelectronics S.R.L. High voltage capacitor

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