JPS53125787A - A plural number of insulation gate field effect transistor for read only memory and its usage - Google Patents

A plural number of insulation gate field effect transistor for read only memory and its usage

Info

Publication number
JPS53125787A
JPS53125787A JP4052277A JP4052277A JPS53125787A JP S53125787 A JPS53125787 A JP S53125787A JP 4052277 A JP4052277 A JP 4052277A JP 4052277 A JP4052277 A JP 4052277A JP S53125787 A JPS53125787 A JP S53125787A
Authority
JP
Japan
Prior art keywords
plural number
usage
read
memory
field effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP4052277A
Other languages
Japanese (ja)
Other versions
JPS6020902B2 (en
Inventor
Yukinori Kuroki
Kiyoshi Sugibuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52040522A priority Critical patent/JPS6020902B2/en
Priority to US05/894,960 priority patent/US4233526A/en
Publication of JPS53125787A publication Critical patent/JPS53125787A/en
Publication of JPS6020902B2 publication Critical patent/JPS6020902B2/en
Expired legal-status Critical Current

Links

Abstract

PURPOSE: To make the degree of integration super-high density, by reducing areas required for element separation and the source and drain, through formation of the high concentration impurity layer of the same type as the source and drain on the semiconductor surface under the gate electrode depending on the content of the information desired to be stored and through provision of a plural number of gates.
COPYRIGHT: (C)1978,JPO&Japio
JP52040522A 1977-04-08 1977-04-08 read-only storage Expired JPS6020902B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP52040522A JPS6020902B2 (en) 1977-04-08 1977-04-08 read-only storage
US05/894,960 US4233526A (en) 1977-04-08 1978-04-10 Semiconductor memory device having multi-gate transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52040522A JPS6020902B2 (en) 1977-04-08 1977-04-08 read-only storage

Publications (2)

Publication Number Publication Date
JPS53125787A true JPS53125787A (en) 1978-11-02
JPS6020902B2 JPS6020902B2 (en) 1985-05-24

Family

ID=12582829

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52040522A Expired JPS6020902B2 (en) 1977-04-08 1977-04-08 read-only storage

Country Status (1)

Country Link
JP (1) JPS6020902B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095847A2 (en) * 1982-06-01 1983-12-07 General Instrument Corporation Compact ROM with reduced access time

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0095847A2 (en) * 1982-06-01 1983-12-07 General Instrument Corporation Compact ROM with reduced access time
JPS58218100A (en) * 1982-06-01 1983-12-19 ゼネラル・インスツルメント・コ−ポレ−シヨン Read only memory and circuit used therefor
EP0095847B1 (en) * 1982-06-01 1990-11-28 General Instrument Corporation Compact rom with reduced access time

Also Published As

Publication number Publication date
JPS6020902B2 (en) 1985-05-24

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