JPS5389379A - Memory element - Google Patents

Memory element

Info

Publication number
JPS5389379A
JPS5389379A JP452277A JP452277A JPS5389379A JP S5389379 A JPS5389379 A JP S5389379A JP 452277 A JP452277 A JP 452277A JP 452277 A JP452277 A JP 452277A JP S5389379 A JPS5389379 A JP S5389379A
Authority
JP
Japan
Prior art keywords
memory element
type region
electron
drain
volatile memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP452277A
Other languages
Japanese (ja)
Inventor
Terutoshi Sasami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP452277A priority Critical patent/JPS5389379A/en
Publication of JPS5389379A publication Critical patent/JPS5389379A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation

Abstract

PURPOSE:To lower the electron injection to a floating gate and the electron release voltage from there and reduce access time by providing an N type region other than source and drain and further forming a phi type region therein in an N channel type non-volatile memory element.
JP452277A 1977-01-17 1977-01-17 Memory element Pending JPS5389379A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP452277A JPS5389379A (en) 1977-01-17 1977-01-17 Memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP452277A JPS5389379A (en) 1977-01-17 1977-01-17 Memory element

Publications (1)

Publication Number Publication Date
JPS5389379A true JPS5389379A (en) 1978-08-05

Family

ID=11586368

Family Applications (1)

Application Number Title Priority Date Filing Date
JP452277A Pending JPS5389379A (en) 1977-01-17 1977-01-17 Memory element

Country Status (1)

Country Link
JP (1) JPS5389379A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127070A (en) * 1979-03-14 1980-10-01 Centre Electron Horloger Electrically erasable and reprogrammable permanent memory cell

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55127070A (en) * 1979-03-14 1980-10-01 Centre Electron Horloger Electrically erasable and reprogrammable permanent memory cell

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