JPS53147474A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS53147474A JPS53147474A JP6235077A JP6235077A JPS53147474A JP S53147474 A JPS53147474 A JP S53147474A JP 6235077 A JP6235077 A JP 6235077A JP 6235077 A JP6235077 A JP 6235077A JP S53147474 A JPS53147474 A JP S53147474A
- Authority
- JP
- Japan
- Prior art keywords
- memory device
- semiconductor memory
- storage
- time
- thinnly
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To make possible higher integration and longer memory holding time by arraying capacities for storage and transistors in laminated layer form and providing a construction of thinnly creating channel regions, i.e., depletion regions at the time of charge storage.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52062350A JPS5819140B2 (en) | 1977-05-27 | 1977-05-27 | semiconductor storage device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP52062350A JPS5819140B2 (en) | 1977-05-27 | 1977-05-27 | semiconductor storage device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53147474A true JPS53147474A (en) | 1978-12-22 |
JPS5819140B2 JPS5819140B2 (en) | 1983-04-16 |
Family
ID=13197575
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP52062350A Expired JPS5819140B2 (en) | 1977-05-27 | 1977-05-27 | semiconductor storage device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5819140B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0738066A (en) * | 1991-04-17 | 1995-02-07 | Korea Electron Telecommun | Junction field dynamic ram and preparation thereof |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6296135U (en) * | 1985-12-05 | 1987-06-19 |
-
1977
- 1977-05-27 JP JP52062350A patent/JPS5819140B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0738066A (en) * | 1991-04-17 | 1995-02-07 | Korea Electron Telecommun | Junction field dynamic ram and preparation thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS5819140B2 (en) | 1983-04-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52106280A (en) | Semiconductor transistor memory cell | |
JPS5362989A (en) | Semiconductor memory device | |
ES520247A0 (en) | IMPROVEMENTS INTRODUCED IN A PHOTOVOLTAIC DEVICE MADE OF SEMICONDUCTIVE MATERIAL. | |
JPS5350944A (en) | Mos semiconductor memory | |
EP0030245A4 (en) | Semiconductor memory device. | |
JPS51114079A (en) | Construction of semiconductor memory device | |
DE3070056D1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
DE3065982D1 (en) | Semiconductor memory device using one transistor memory cell | |
JPS54107278A (en) | Semiconductor device | |
JPS53148256A (en) | Nonvolatile semiconductor memory device | |
JPS53115185A (en) | Memory type variable capacitive device | |
JPS53147474A (en) | Semiconductor memory device | |
JPS52115663A (en) | Semiconductor device | |
DE3070152D1 (en) | Semiconductor memory device including integrated injection logic memory cells | |
JPS51147280A (en) | Semiconductor device | |
JPS538074A (en) | Mis type semiconductor device | |
JPS53112687A (en) | Semiconductor device | |
JPS5210032A (en) | Construction method of semiconductor memory unit | |
JPS5227285A (en) | Semiconductor device | |
JPS5346288A (en) | Mis type semiconductor device | |
JPS53132281A (en) | Semiconductor memory device | |
JPS5345940A (en) | Semiconductor memory unit | |
JPS52117582A (en) | Mos type semiconductor device | |
JPS5432086A (en) | Semiconductor capacity element | |
DE3065534D1 (en) | Semiconductor memory device with multi-emitter transistor cells |