JPS5227285A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5227285A
JPS5227285A JP10326275A JP10326275A JPS5227285A JP S5227285 A JPS5227285 A JP S5227285A JP 10326275 A JP10326275 A JP 10326275A JP 10326275 A JP10326275 A JP 10326275A JP S5227285 A JPS5227285 A JP S5227285A
Authority
JP
Japan
Prior art keywords
semiconductor device
unit
significantly reduces
formation area
parasitic capacity
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10326275A
Other languages
Japanese (ja)
Inventor
Tadayoshi Mifune
Isatake Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP10326275A priority Critical patent/JPS5227285A/en
Publication of JPS5227285A publication Critical patent/JPS5227285A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To provide a semiconductor unit which has excellent crystallization in unit formation area and significantly reduces parasitic capacity.
JP10326275A 1975-08-26 1975-08-26 Semiconductor device Pending JPS5227285A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10326275A JPS5227285A (en) 1975-08-26 1975-08-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10326275A JPS5227285A (en) 1975-08-26 1975-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5227285A true JPS5227285A (en) 1977-03-01

Family

ID=14349511

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10326275A Pending JPS5227285A (en) 1975-08-26 1975-08-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5227285A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125909U (en) * 1978-02-22 1979-09-03
JPS57104239A (en) * 1980-12-22 1982-06-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for insulating layer
JPS57180145A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPS58199537A (en) * 1982-05-14 1983-11-19 Matsushita Electric Ind Co Ltd Manufacture of high resistance semiconductor layer
JPS6080279A (en) * 1983-10-08 1985-05-08 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type transistor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54125909U (en) * 1978-02-22 1979-09-03
JPS584059Y2 (en) * 1978-02-22 1983-01-24 株式会社小松製作所 Combustor for turbocharger boosting in turbocharged internal combustion engines
JPS57104239A (en) * 1980-12-22 1982-06-29 Nippon Telegr & Teleph Corp <Ntt> Forming method for insulating layer
JPS57180145A (en) * 1981-04-30 1982-11-06 Nippon Telegr & Teleph Corp <Ntt> Manufacture of semiconductor integrated circuit device
JPS58199537A (en) * 1982-05-14 1983-11-19 Matsushita Electric Ind Co Ltd Manufacture of high resistance semiconductor layer
JPS6080279A (en) * 1983-10-08 1985-05-08 Nippon Telegr & Teleph Corp <Ntt> Insulated gate type transistor

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