JPS5227285A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS5227285A JPS5227285A JP10326275A JP10326275A JPS5227285A JP S5227285 A JPS5227285 A JP S5227285A JP 10326275 A JP10326275 A JP 10326275A JP 10326275 A JP10326275 A JP 10326275A JP S5227285 A JPS5227285 A JP S5227285A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- unit
- significantly reduces
- formation area
- parasitic capacity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 238000002425 crystallisation Methods 0.000 abstract 1
- 230000008025 crystallization Effects 0.000 abstract 1
- 230000003071 parasitic effect Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Element Separation (AREA)
Abstract
PURPOSE:To provide a semiconductor unit which has excellent crystallization in unit formation area and significantly reduces parasitic capacity.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10326275A JPS5227285A (en) | 1975-08-26 | 1975-08-26 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP10326275A JPS5227285A (en) | 1975-08-26 | 1975-08-26 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5227285A true JPS5227285A (en) | 1977-03-01 |
Family
ID=14349511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP10326275A Pending JPS5227285A (en) | 1975-08-26 | 1975-08-26 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5227285A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54125909U (en) * | 1978-02-22 | 1979-09-03 | ||
JPS57104239A (en) * | 1980-12-22 | 1982-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating layer |
JPS57180145A (en) * | 1981-04-30 | 1982-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor integrated circuit device |
JPS58199537A (en) * | 1982-05-14 | 1983-11-19 | Matsushita Electric Ind Co Ltd | Manufacture of high resistance semiconductor layer |
JPS6080279A (en) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type transistor |
-
1975
- 1975-08-26 JP JP10326275A patent/JPS5227285A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54125909U (en) * | 1978-02-22 | 1979-09-03 | ||
JPS584059Y2 (en) * | 1978-02-22 | 1983-01-24 | 株式会社小松製作所 | Combustor for turbocharger boosting in turbocharged internal combustion engines |
JPS57104239A (en) * | 1980-12-22 | 1982-06-29 | Nippon Telegr & Teleph Corp <Ntt> | Forming method for insulating layer |
JPS57180145A (en) * | 1981-04-30 | 1982-11-06 | Nippon Telegr & Teleph Corp <Ntt> | Manufacture of semiconductor integrated circuit device |
JPS58199537A (en) * | 1982-05-14 | 1983-11-19 | Matsushita Electric Ind Co Ltd | Manufacture of high resistance semiconductor layer |
JPS6080279A (en) * | 1983-10-08 | 1985-05-08 | Nippon Telegr & Teleph Corp <Ntt> | Insulated gate type transistor |
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