JPS5339082A - Bipolar lateral transistor - Google Patents

Bipolar lateral transistor

Info

Publication number
JPS5339082A
JPS5339082A JP11317477A JP11317477A JPS5339082A JP S5339082 A JPS5339082 A JP S5339082A JP 11317477 A JP11317477 A JP 11317477A JP 11317477 A JP11317477 A JP 11317477A JP S5339082 A JPS5339082 A JP S5339082A
Authority
JP
Japan
Prior art keywords
lateral transistor
bipolar lateral
bipolar
transistor
lateral
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11317477A
Other languages
Japanese (ja)
Other versions
JPS6028395B2 (en
Inventor
Nujiria Jieraaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thales SA
Original Assignee
Thomson CSF SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thomson CSF SA filed Critical Thomson CSF SA
Publication of JPS5339082A publication Critical patent/JPS5339082A/en
Publication of JPS6028395B2 publication Critical patent/JPS6028395B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/735—Lateral transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP52113174A 1976-09-21 1977-09-20 bipolar lateral transistor Expired JPS6028395B2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR7628318 1976-09-21
FR7628318A FR2365213A1 (en) 1976-09-21 1976-09-21 SIDE BIPOLAR TRANSISTOR AND CIRCUITS USING THIS TRANSISTOR

Publications (2)

Publication Number Publication Date
JPS5339082A true JPS5339082A (en) 1978-04-10
JPS6028395B2 JPS6028395B2 (en) 1985-07-04

Family

ID=9177896

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52113174A Expired JPS6028395B2 (en) 1976-09-21 1977-09-20 bipolar lateral transistor

Country Status (4)

Country Link
JP (1) JPS6028395B2 (en)
DE (1) DE2742361A1 (en)
FR (1) FR2365213A1 (en)
GB (1) GB1593063A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105209A (en) * 1974-01-25 1975-08-19
JPS5529197A (en) * 1978-08-17 1980-03-01 Siemens Ag Monolithic integrated circuit
JPS6165762U (en) * 1984-10-03 1986-05-06

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2592525B1 (en) * 1985-12-31 1988-02-12 Radiotechnique Compelec METHOD FOR MANUFACTURING AN INTEGRATED LATERAL TRANSISTOR AND INTEGRATED CIRCUIT COMPRISING SAME
DE69521210T2 (en) * 1995-12-29 2001-11-22 Cons Ric Microelettronica Integrated electronic component with reduced parasitic currents and method therefor

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3967307A (en) * 1973-07-30 1976-06-29 Signetics Corporation Lateral bipolar transistor for integrated circuits and method for forming the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50105209A (en) * 1974-01-25 1975-08-19
JPS5529197A (en) * 1978-08-17 1980-03-01 Siemens Ag Monolithic integrated circuit
JPS6364058B2 (en) * 1978-08-17 1988-12-09
JPS6165762U (en) * 1984-10-03 1986-05-06

Also Published As

Publication number Publication date
GB1593063A (en) 1981-07-15
FR2365213A1 (en) 1978-04-14
DE2742361C2 (en) 1989-03-09
FR2365213B1 (en) 1979-01-12
DE2742361A1 (en) 1978-03-23
JPS6028395B2 (en) 1985-07-04

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