KR900008703A - 반도체 장치 - Google Patents

반도체 장치

Info

Publication number
KR900008703A
KR900008703A KR1019890016101A KR890016101A KR900008703A KR 900008703 A KR900008703 A KR 900008703A KR 1019890016101 A KR1019890016101 A KR 1019890016101A KR 890016101 A KR890016101 A KR 890016101A KR 900008703 A KR900008703 A KR 900008703A
Authority
KR
South Korea
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
KR1019890016101A
Other languages
English (en)
Other versions
KR920010314B1 (ko
Inventor
신지로 야노
Original Assignee
가부시키가이샤 도시바
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 도시바 filed Critical 가부시키가이샤 도시바
Publication of KR900008703A publication Critical patent/KR900008703A/ko
Application granted granted Critical
Publication of KR920010314B1 publication Critical patent/KR920010314B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristor the device being a photothyristor
KR1019890016101A 1988-11-07 1989-11-07 반도체 장치 KR920010314B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63280931A JPH02126677A (ja) 1988-11-07 1988-11-07 半導体装置
JP88-280931 1988-11-07

Publications (2)

Publication Number Publication Date
KR900008703A true KR900008703A (ko) 1990-06-03
KR920010314B1 KR920010314B1 (ko) 1992-11-26

Family

ID=17631925

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019890016101A KR920010314B1 (ko) 1988-11-07 1989-11-07 반도체 장치

Country Status (6)

Country Link
US (1) US5138415A (ko)
EP (1) EP0400153B1 (ko)
JP (1) JPH02126677A (ko)
KR (1) KR920010314B1 (ko)
DE (1) DE68923789T2 (ko)
WO (1) WO1990005383A1 (ko)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US6166768A (en) * 1994-01-28 2000-12-26 California Institute Of Technology Active pixel sensor array with simple floating gate pixels
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
TW374246B (en) * 1998-02-07 1999-11-11 United Microelectronics Corp Flash memory cell structure and method for manufacturing the same
US6140715A (en) * 1998-11-06 2000-10-31 Asea Brown Boveri Ab Electric switching device and a method for performing electric disconnection of a load
TW484235B (en) * 1999-02-25 2002-04-21 Canon Kk Light-receiving element and photoelectric conversion device
GB0108123D0 (en) * 2001-03-30 2001-05-23 Avia Medica Ltd Method and device for provinding theraputic lower leg, calf muscle, ankle, foot and toe exercise for reducing the risk of deep vien thrombosis
US8093652B2 (en) * 2002-08-28 2012-01-10 Ixys Corporation Breakdown voltage for power devices
US20040164321A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Vertical charge transfer active pixel sensor
EP1722423B1 (en) * 2005-05-12 2016-07-06 Ixys Corporation Stable diodes for low and high frequency applications
DE102007006827B3 (de) * 2007-02-07 2008-03-06 Oliver Bartels Halbleiterschalter für Hochspannungen
KR102609644B1 (ko) * 2015-12-03 2023-12-05 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자 및 촬상 장치
DE102017114289A1 (de) 2017-06-27 2018-12-27 Healthfactories GmbH Halbleiterschalter für Hochspannungen mit neuartiger resonanter Übertragerkette
JP7182930B2 (ja) * 2018-07-24 2022-12-05 キヤノン株式会社 放射線検出器
CN111627996B (zh) * 2020-06-08 2023-05-23 无锡光磊电子科技有限公司 一种采用电压驱动的可控硅

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
JPS5546871A (en) * 1978-09-27 1980-04-02 Toshiba Corp Light-triggered thyristor
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
JPS5718358A (en) * 1980-07-08 1982-01-30 Hitachi Ltd Photodriven type thyristor
JPS5737873A (en) * 1980-08-18 1982-03-02 Mitsubishi Electric Corp Semiconductor device
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
JPS6035571A (ja) * 1983-08-08 1985-02-23 Sanken Electric Co Ltd 半導体装置
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPH0635571A (ja) * 1992-05-20 1994-02-10 Funai Electric Co Ltd コンピュータ制御電子機器

Also Published As

Publication number Publication date
EP0400153B1 (en) 1995-08-09
KR920010314B1 (ko) 1992-11-26
EP0400153A1 (en) 1990-12-05
EP0400153A4 (en) 1991-04-10
DE68923789D1 (de) 1995-09-14
US5138415A (en) 1992-08-11
WO1990005383A1 (en) 1990-05-17
DE68923789T2 (de) 1996-02-22
JPH055382B2 (ko) 1993-01-22
JPH02126677A (ja) 1990-05-15

Similar Documents

Publication Publication Date Title
KR900011017A (ko) 반도체장치
DE68926256D1 (de) Komplementäre Halbleiteranordnung
KR900007100A (ko) 반도체장치
DE68925374D1 (de) Halbleiterherstellungsvorrichtung
DE68917848D1 (de) Halbleiteranordnung.
DE68921421T2 (de) Halbleitervorrichtung.
KR900008703A (ko) 반도체 장치
KR900001037A (ko) 반도체 장치
DE69033794D1 (de) Halbleiteranordnung
DE68917971D1 (de) Halbleitervorrichtung.
DE69031609T2 (de) Halbleiteranordnung
DE68928760T2 (de) Halbleitervorrichtung
KR900702572A (ko) 반도체 장치
KR890015422A (ko) 반도체 장치
KR890015471A (ko) 반도체 장치
KR900008615A (ko) 반도체장치
DE69029226D1 (de) Halbleiteranordnung
KR890005864A (ko) 반도체 장치
KR890004438A (ko) 반도체 장치
KR900011013A (ko) 반도체장치
DE69027586T2 (de) Halbleiteranordnung
DE69025825D1 (de) Halbleiteranordnung
DE68914885D1 (de) Halbleitervorrichtung.
KR900000905A (ko) 반도체장치
KR900015287A (ko) 반도체장치

Legal Events

Date Code Title Description
A201 Request for examination
G160 Decision to publish patent application
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20051031

Year of fee payment: 14

LAPS Lapse due to unpaid annual fee