DE69031609T2 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE69031609T2
DE69031609T2 DE69031609T DE69031609T DE69031609T2 DE 69031609 T2 DE69031609 T2 DE 69031609T2 DE 69031609 T DE69031609 T DE 69031609T DE 69031609 T DE69031609 T DE 69031609T DE 69031609 T2 DE69031609 T2 DE 69031609T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69031609T
Other languages
English (en)
Other versions
DE69031609D1 (de
Inventor
Takashi Sakuda
Kazuhiko Ohkawa
Yasuhiro Oguchi
Yasuhisa Hirabayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP02027785A external-priority patent/JP3092133B2/ja
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Publication of DE69031609D1 publication Critical patent/DE69031609D1/de
Application granted granted Critical
Publication of DE69031609T2 publication Critical patent/DE69031609T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/118—Masterslice integrated circuits
    • H01L27/11803—Masterslice integrated circuits using field effect technology
    • H01L27/11807—CMOS gate arrays
DE69031609T 1989-04-19 1990-04-18 Halbleiteranordnung Expired - Fee Related DE69031609T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9913089 1989-04-19
JP12583989 1989-05-19
JP02027785A JP3092133B2 (ja) 1989-04-19 1990-02-07 半導体装置

Publications (2)

Publication Number Publication Date
DE69031609D1 DE69031609D1 (de) 1997-11-27
DE69031609T2 true DE69031609T2 (de) 1998-03-12

Family

ID=27285945

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69031609T Expired - Fee Related DE69031609T2 (de) 1989-04-19 1990-04-18 Halbleiteranordnung
DE69034088T Expired - Fee Related DE69034088T2 (de) 1989-04-19 1990-04-18 Halbleiteranordnung

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69034088T Expired - Fee Related DE69034088T2 (de) 1989-04-19 1990-04-18 Halbleiteranordnung

Country Status (4)

Country Link
US (1) US5136356A (de)
EP (2) EP0712164B1 (de)
DE (2) DE69031609T2 (de)
SG (1) SG67297A1 (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3266644B2 (ja) * 1991-04-08 2002-03-18 テキサス インスツルメンツ インコーポレイテツド ゲートアレイ装置
US5275962A (en) * 1991-04-08 1994-01-04 Texas Instruments Incorporated Mask programmable gate array base cell
DE69230019T2 (de) * 1991-07-18 2000-01-05 Fujitsu Ltd Anordnung von Transistoren zur Fertigung einer Basiszelle für eine integrierte Masterslice-Halbleiteranordnung und integrierte Masterslice-Halbleiteranordnung
WO1993012582A1 (en) * 1991-12-13 1993-06-24 Knights Technology, Inc. Programmable logic device cell and method
US6160275A (en) * 1993-04-20 2000-12-12 Hitachi, Ltd. Semiconductor gate array device
JPH11121722A (ja) * 1997-10-17 1999-04-30 Mitsubishi Electric Corp ゲートアレーおよびゲートアレーを用いる半導体集積回路の製造方法
US6387739B1 (en) * 1998-08-07 2002-05-14 International Business Machines Corporation Method and improved SOI body contact structure for transistors
JP2001110903A (ja) * 1999-10-13 2001-04-20 Matsushita Electric Ind Co Ltd 集積回路のレイアウト構造、並びにｃｍｏｓ回路のレイアウト設計方法および設計装置
JP4521088B2 (ja) * 2000-03-27 2010-08-11 株式会社東芝 半導体装置
JP2002026296A (ja) * 2000-06-22 2002-01-25 Internatl Business Mach Corp <Ibm> 半導体集積回路装置

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0020116B1 (de) * 1979-05-24 1984-03-14 Fujitsu Limited Halbleitervorrichtung vom "MASTERSLICE"-Typ und Herstellungsverfahren
JPS57100746A (en) * 1980-12-15 1982-06-23 Toshiba Corp Semiconductor integrated circuit device
JPS5882533A (ja) * 1981-07-10 1983-05-18 Hitachi Ltd 半導体集積回路装置
JPS5864047A (ja) * 1981-10-13 1983-04-16 Nec Corp マスタ−スライス半導体集積回路装置
JPH0828480B2 (ja) * 1983-09-30 1996-03-21 富士通株式会社 半導体集積回路装置
JPS6074644A (ja) * 1983-09-30 1985-04-26 Fujitsu Ltd Ｃｍｏｓゲ−トアレ−
JPS6080251A (ja) * 1983-10-08 1985-05-08 Fujitsu Ltd ゲ−トアレイ大規模集積回路装置
JPS6114734A (ja) * 1984-06-29 1986-01-22 Fujitsu Ltd 半導体集積回路装置及びその製造方法
JPS6135535A (ja) 1984-07-27 1986-02-20 Fujitsu Ltd マスタ−スライス集積回路装置
US4682201A (en) * 1984-10-19 1987-07-21 California Devices, Inc. Gate array cell
JPS61100947A (ja) * 1984-10-22 1986-05-19 Toshiba Corp 半導体集積回路装置
JPS61123168A (ja) * 1984-11-20 1986-06-11 Fujitsu Ltd 半導体記憶装置
JPH0638468B2 (ja) * 1984-12-18 1994-05-18 三洋電機株式会社 半導体集積回路装置
US4924287A (en) * 1985-01-20 1990-05-08 Avner Pdahtzur Personalizable CMOS gate array device and technique
JPS6254450A (ja) * 1985-09-02 1987-03-10 Nec Corp マスタ−スライス基板
JPS62261144A (ja) * 1986-05-07 1987-11-13 Mitsubishi Electric Corp 半導体集積回路
US4884118A (en) * 1986-05-19 1989-11-28 Lsi Logic Corporation Double metal HCMOS compacted array
JPS62276852A (ja) * 1986-05-23 1987-12-01 Mitsubishi Electric Corp 半導体集積回路装置
US4745084A (en) * 1986-11-12 1988-05-17 Vlsi Technology, Inc. Method of making a customized semiconductor integrated device
JPH0194636A (ja) * 1987-10-06 1989-04-13 Hitachi Ltd 半導体装置

Also Published As

Publication number Publication date
EP0712164B1 (de) 2003-07-02
DE69034088T2 (de) 2004-02-05
EP0712164A3 (de) 1996-10-16
EP0393620A3 (de) 1991-04-17
EP0393620B1 (de) 1997-10-22
DE69031609D1 (de) 1997-11-27
EP0712164A2 (de) 1996-05-15
DE69034088D1 (de) 2003-08-07
US5136356A (en) 1992-08-04
SG67297A1 (en) 1999-09-21
EP0393620A2 (de) 1990-10-24

Similar Documents

Publication Publication Date Title
KR900011017A (ko) 반도체장치
DE68926256D1 (de) Komplementäre Halbleiteranordnung
DE69132354D1 (de) Halbleitervorrichtung
KR900007100A (ko) 반도체장치
KR900008703A (ko) 반도체 장치
DE69031790D1 (de) Ein-Chip-Halbleitervorrichtung
DE69131118D1 (de) Halbleitereinheit
KR900001037A (ko) 반도체 장치
DE69127494T2 (de) Halbleiteranordnung
DE69033794D1 (de) Halbleiteranordnung
DE69031609T2 (de) Halbleiteranordnung
DE59003052D1 (de) Halbleiterbauelement.
DE68928760D1 (de) Halbleitervorrichtung
KR900702572A (ko) 반도체 장치
KR890015422A (ko) 반도체 장치
DE69029226T2 (de) Halbleiteranordnung
KR890015471A (ko) 반도체 장치
KR900008615A (ko) 반도체장치
KR890004438A (ko) 반도체 장치
KR890005864A (ko) 반도체 장치
DE69025825D1 (de) Halbleiteranordnung
DE69027586D1 (de) Halbleiteranordnung
KR900011013A (ko) 반도체장치
KR900015287A (ko) 반도체장치
KR900012356A (ko) 반도체장치

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee