DE69029226T2 - Halbleiteranordnung - Google Patents

Halbleiteranordnung

Info

Publication number
DE69029226T2
DE69029226T2 DE69029226T DE69029226T DE69029226T2 DE 69029226 T2 DE69029226 T2 DE 69029226T2 DE 69029226 T DE69029226 T DE 69029226T DE 69029226 T DE69029226 T DE 69029226T DE 69029226 T2 DE69029226 T2 DE 69029226T2
Authority
DE
Germany
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69029226T
Other languages
English (en)
Other versions
DE69029226D1 (de
Inventor
Hitoshi Kudoh
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of DE69029226D1 publication Critical patent/DE69029226D1/de
Publication of DE69029226T2 publication Critical patent/DE69029226T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/4238—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the surface lay-out

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69029226T 1989-06-15 1990-06-13 Halbleiteranordnung Expired - Fee Related DE69029226T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15342589 1989-06-15

Publications (2)

Publication Number Publication Date
DE69029226D1 DE69029226D1 (de) 1997-01-09
DE69029226T2 true DE69029226T2 (de) 1997-05-15

Family

ID=15562230

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69029226T Expired - Fee Related DE69029226T2 (de) 1989-06-15 1990-06-13 Halbleiteranordnung

Country Status (3)

Country Link
EP (1) EP0403267B1 (de)
JP (1) JP2633376B2 (de)
DE (1) DE69029226T2 (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735231C2 (de) * 1997-02-14 2002-11-14 Nat Semiconductor Corp Neuronales MOSFET-Modul

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0814702A (ja) * 1994-06-27 1996-01-19 Nippondenso Co Ltd 積層型蒸発器
JP4202012B2 (ja) 2001-11-09 2008-12-24 株式会社半導体エネルギー研究所 発光装置及び電流記憶回路
FR2883168B1 (fr) 2005-03-18 2008-01-11 Oreal Compositions cosmetiques de soin, renforcement et/ou reparation des substrats keratiniques comprenant des polypeptides kap
JP5063539B2 (ja) * 2008-09-12 2012-10-31 株式会社半導体エネルギー研究所 半導体装置及びそれを用いたモジュール、電気器具
JP4796635B2 (ja) 2009-01-22 2011-10-19 株式会社沖データ 駆動回路、光プリントヘッド及び画像形成装置
JP5526108B2 (ja) * 2011-11-14 2014-06-18 株式会社半導体エネルギー研究所 発光装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6072257A (ja) * 1983-09-28 1985-04-24 Nec Corp 半導体集積回路
JPS61290767A (ja) * 1985-06-19 1986-12-20 Hitachi Ltd Ｍｏｓ電界効果トランジスタ
JPH0770613B2 (ja) * 1988-02-29 1995-07-31 日本電気株式会社 半導体集積回路の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19735231C2 (de) * 1997-02-14 2002-11-14 Nat Semiconductor Corp Neuronales MOSFET-Modul

Also Published As

Publication number Publication date
JPH0387071A (ja) 1991-04-11
EP0403267A2 (de) 1990-12-19
EP0403267A3 (de) 1991-06-26
EP0403267B1 (de) 1996-11-27
DE69029226D1 (de) 1997-01-09
JP2633376B2 (ja) 1997-07-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee