DE68923789T2 - Optische halbleitervorrichtung mit einer nulldurchgangsfunktion. - Google Patents

Optische halbleitervorrichtung mit einer nulldurchgangsfunktion.

Info

Publication number
DE68923789T2
DE68923789T2 DE68923789T DE68923789T DE68923789T2 DE 68923789 T2 DE68923789 T2 DE 68923789T2 DE 68923789 T DE68923789 T DE 68923789T DE 68923789 T DE68923789 T DE 68923789T DE 68923789 T2 DE68923789 T2 DE 68923789T2
Authority
DE
Germany
Prior art keywords
zero
semiconductor device
optical semiconductor
continuous function
continuous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68923789T
Other languages
English (en)
Other versions
DE68923789D1 (de
Inventor
Shinjiro Toshiba Hiyoshi- Yano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE68923789D1 publication Critical patent/DE68923789D1/de
Application granted granted Critical
Publication of DE68923789T2 publication Critical patent/DE68923789T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/111—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors
    • H01L31/1113—Devices sensitive to infrared, visible or ultraviolet radiation characterised by at least three potential barriers, e.g. photothyristors the device being a photothyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Ceramic Engineering (AREA)
  • Thyristors (AREA)
  • Light Receiving Elements (AREA)
  • Electronic Switches (AREA)
DE68923789T 1988-11-07 1989-11-07 Optische halbleitervorrichtung mit einer nulldurchgangsfunktion. Expired - Fee Related DE68923789T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP63280931A JPH02126677A (ja) 1988-11-07 1988-11-07 半導体装置
PCT/JP1989/001139 WO1990005383A1 (en) 1988-11-07 1989-11-07 Optical semiconductor device having a zero-crossing function

Publications (2)

Publication Number Publication Date
DE68923789D1 DE68923789D1 (de) 1995-09-14
DE68923789T2 true DE68923789T2 (de) 1996-02-22

Family

ID=17631925

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68923789T Expired - Fee Related DE68923789T2 (de) 1988-11-07 1989-11-07 Optische halbleitervorrichtung mit einer nulldurchgangsfunktion.

Country Status (6)

Country Link
US (1) US5138415A (de)
EP (1) EP0400153B1 (de)
JP (1) JPH02126677A (de)
KR (1) KR920010314B1 (de)
DE (1) DE68923789T2 (de)
WO (1) WO1990005383A1 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3111576B2 (ja) * 1992-01-06 2000-11-27 富士電機株式会社 半導体装置
US6166768A (en) * 1994-01-28 2000-12-26 California Institute Of Technology Active pixel sensor array with simple floating gate pixels
FR2734429B1 (fr) * 1995-05-19 1997-08-01 Sgs Thomson Microelectronics Module interrupteur et d'alimentation-application au demarrage d'un tube fluorescent
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
US5686857A (en) * 1996-02-06 1997-11-11 Motorola, Inc. Zero-crossing triac and method
US6008713A (en) * 1996-02-29 1999-12-28 Texas Instruments Incorporated Monolithic inductor
US6154477A (en) * 1997-05-13 2000-11-28 Berkeley Research Associates, Inc. On-board laser-triggered multi-layer semiconductor power switch
TW374246B (en) * 1998-02-07 1999-11-11 United Microelectronics Corp Flash memory cell structure and method for manufacturing the same
US6140715A (en) * 1998-11-06 2000-10-31 Asea Brown Boveri Ab Electric switching device and a method for performing electric disconnection of a load
EP1032049B1 (de) * 1999-02-25 2011-07-13 Canon Kabushiki Kaisha Photoelektrisches Umwandlungselement
GB0108123D0 (en) * 2001-03-30 2001-05-23 Avia Medica Ltd Method and device for provinding theraputic lower leg, calf muscle, ankle, foot and toe exercise for reducing the risk of deep vien thrombosis
US8093652B2 (en) * 2002-08-28 2012-01-10 Ixys Corporation Breakdown voltage for power devices
US20040164321A1 (en) * 2003-02-26 2004-08-26 Dialog Semiconductor Vertical charge transfer active pixel sensor
EP1722423B1 (de) * 2005-05-12 2016-07-06 Ixys Corporation Stabile Dioden für Niedrig- und Hochfrequenzanwendungen
DE102007006827B3 (de) * 2007-02-07 2008-03-06 Oliver Bartels Halbleiterschalter für Hochspannungen
CN115692444A (zh) 2015-12-03 2023-02-03 索尼半导体解决方案公司 固态摄像元件和摄像装置
DE102017114289A1 (de) 2017-06-27 2018-12-27 Healthfactories GmbH Halbleiterschalter für Hochspannungen mit neuartiger resonanter Übertragerkette
JP7182930B2 (ja) * 2018-07-24 2022-12-05 キヤノン株式会社 放射線検出器
CN111627996B (zh) * 2020-06-08 2023-05-23 无锡光磊电子科技有限公司 一种采用电压驱动的可控硅

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE392783B (sv) * 1975-06-19 1977-04-18 Asea Ab Halvledaranordning innefattande en tyristor och en felteffekttransistordel
US4396932A (en) * 1978-06-16 1983-08-02 Motorola, Inc. Method for making a light-activated line-operable zero-crossing switch including two lateral transistors, the emitter of one lying between the emitter and collector of the other
JPS5546871A (en) * 1978-09-27 1980-04-02 Toshiba Corp Light-triggered thyristor
US4295058A (en) * 1979-06-07 1981-10-13 Eaton Corporation Radiant energy activated semiconductor switch
JPS5718358A (en) * 1980-07-08 1982-01-30 Hitachi Ltd Photodriven type thyristor
JPS5737873A (en) * 1980-08-18 1982-03-02 Mitsubishi Electric Corp Semiconductor device
JPS58105572A (ja) * 1981-12-18 1983-06-23 Sanken Electric Co Ltd ゼロクロス光サイリスタ
US4535251A (en) * 1982-12-21 1985-08-13 International Rectifier Corporation A.C. Solid state relay circuit and structure
JPS6035571A (ja) * 1983-08-08 1985-02-23 Sanken Electric Co Ltd 半導体装置
US4779126A (en) * 1983-11-25 1988-10-18 International Rectifier Corporation Optically triggered lateral thyristor with auxiliary region
JPH0635571A (ja) * 1992-05-20 1994-02-10 Funai Electric Co Ltd コンピュータ制御電子機器

Also Published As

Publication number Publication date
KR900008703A (ko) 1990-06-03
DE68923789D1 (de) 1995-09-14
WO1990005383A1 (en) 1990-05-17
KR920010314B1 (ko) 1992-11-26
EP0400153A4 (en) 1991-04-10
US5138415A (en) 1992-08-11
JPH055382B2 (de) 1993-01-22
EP0400153A1 (de) 1990-12-05
EP0400153B1 (de) 1995-08-09
JPH02126677A (ja) 1990-05-15

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee