DE69225026T2 - Überspannungsgeschützter Halbleiterschalter - Google Patents
Überspannungsgeschützter HalbleiterschalterInfo
- Publication number
- DE69225026T2 DE69225026T2 DE69225026T DE69225026T DE69225026T2 DE 69225026 T2 DE69225026 T2 DE 69225026T2 DE 69225026 T DE69225026 T DE 69225026T DE 69225026 T DE69225026 T DE 69225026T DE 69225026 T2 DE69225026 T2 DE 69225026T2
- Authority
- DE
- Germany
- Prior art keywords
- surge
- semiconductor switch
- protected semiconductor
- protected
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
- H01L29/7808—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device the other device being a breakdown diode, e.g. Zener diode
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB919115699A GB9115699D0 (en) | 1991-07-19 | 1991-07-19 | An overvoltage protected semiconductor switch |
GB929207869A GB9207869D0 (en) | 1991-07-19 | 1992-04-09 | An overvoltage protected semiconductor switch |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69225026D1 DE69225026D1 (de) | 1998-05-14 |
DE69225026T2 true DE69225026T2 (de) | 1998-10-15 |
Family
ID=26299275
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69225026T Expired - Fee Related DE69225026T2 (de) | 1991-07-19 | 1992-07-10 | Überspannungsgeschützter Halbleiterschalter |
Country Status (3)
Country | Link |
---|---|
EP (1) | EP0523800B1 (de) |
JP (1) | JP3337493B2 (de) |
DE (1) | DE69225026T2 (de) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5345357A (en) * | 1992-06-05 | 1994-09-06 | At&T Bell Laboratories | ESD protection of output buffers |
EP0631390B1 (de) * | 1993-06-22 | 1999-09-01 | Philips Electronics Uk Limited | Halbleiter-Leistungsschaltung |
GB9313651D0 (en) * | 1993-07-01 | 1993-08-18 | Philips Electronics Uk Ltd | A semiconductor device |
GB9326275D0 (en) * | 1993-12-23 | 1994-02-23 | Lucas Ind Plc | Tamper-resistant circuit |
US5489792A (en) * | 1994-04-07 | 1996-02-06 | Regents Of The University Of California | Silicon-on-insulator transistors having improved current characteristics and reduced electrostatic discharge susceptibility |
DE59409484D1 (de) * | 1994-10-28 | 2000-09-21 | Siemens Ag | Festkörperschaltelement mit zwei source-elektroden und festkörperschalter mit einem solchen element |
JP3485655B2 (ja) * | 1994-12-14 | 2004-01-13 | 株式会社ルネサステクノロジ | 複合型mosfet |
DE19739683A1 (de) * | 1997-09-10 | 1999-03-18 | Bosch Gmbh Robert | Schaltungsanordnung zum Schutz integrierter Schaltungen vor elektrostatischen Entladungen |
DE19740540C1 (de) * | 1997-09-15 | 1999-03-18 | Siemens Ag | Schaltungsanordnung zur Begrenzung von Überspannungen bei Leistungshalbleitern |
FI117410B (fi) * | 1998-07-31 | 2006-09-29 | Lexel Finland Ab Oy | Suoja verkon ylijännitepiikkiä vastaan |
US6614633B1 (en) | 1999-03-19 | 2003-09-02 | Denso Corporation | Semiconductor device including a surge protecting circuit |
JP4501178B2 (ja) * | 1999-07-26 | 2010-07-14 | 株式会社デンソー | 半導体装置のための保護装置 |
JP3926975B2 (ja) | 1999-09-22 | 2007-06-06 | 株式会社東芝 | スタック型mosトランジスタ保護回路 |
US6392463B1 (en) | 2000-07-07 | 2002-05-21 | Denso Corporation | Electrical load driving circuit with protection |
US6690065B2 (en) * | 2000-12-28 | 2004-02-10 | Industrial Technology Research Institute | Substrate-biased silicon diode for electrostatic discharge protection and fabrication method |
JP5686701B2 (ja) * | 2011-08-11 | 2015-03-18 | 新日本無線株式会社 | 正負電圧論理出力回路およびこれを用いた高周波スイッチ回路 |
JP6203097B2 (ja) * | 2014-03-20 | 2017-09-27 | 株式会社東芝 | 半導体装置 |
DE102015111479B4 (de) * | 2015-07-15 | 2020-09-24 | Infineon Technologies Austria Ag | Halbleitervorrichtung mit einer klemmstruktur |
JP7291495B2 (ja) * | 2019-02-12 | 2023-06-15 | ローム株式会社 | 半導体装置 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2206993A (en) * | 1987-06-08 | 1989-01-18 | Philips Electronic Associated | A method of manufacturing a semiconductor device |
US4893158A (en) * | 1987-06-22 | 1990-01-09 | Nissan Motor Co., Ltd. | MOSFET device |
JPH02185069A (ja) * | 1988-12-02 | 1990-07-19 | Motorola Inc | 高エネルギー阻止能力及び温度補償された阻止電圧を具備する半導体デバイス |
US5023692A (en) * | 1989-12-07 | 1991-06-11 | Harris Semiconductor Patents, Inc. | Power MOSFET transistor circuit |
US5005061A (en) * | 1990-02-05 | 1991-04-02 | Motorola, Inc. | Avalanche stress protected semiconductor device having variable input impedance |
-
1992
- 1992-07-10 DE DE69225026T patent/DE69225026T2/de not_active Expired - Fee Related
- 1992-07-10 EP EP92202111A patent/EP0523800B1/de not_active Expired - Lifetime
- 1992-07-20 JP JP19217092A patent/JP3337493B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
EP0523800A1 (de) | 1993-01-20 |
JPH0864812A (ja) | 1996-03-08 |
DE69225026D1 (de) | 1998-05-14 |
JP3337493B2 (ja) | 2002-10-21 |
EP0523800B1 (de) | 1998-04-08 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: KONINKLIJKE PHILIPS ELECTRONICS N.V., EINDHOVEN, N |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: VOLMER, G., DIPL.-ING., PAT.-ANW., 52066 AACHEN |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |
|
8339 | Ceased/non-payment of the annual fee |