DE69131541D1 - Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung - Google Patents

Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung

Info

Publication number
DE69131541D1
DE69131541D1 DE69131541T DE69131541T DE69131541D1 DE 69131541 D1 DE69131541 D1 DE 69131541D1 DE 69131541 T DE69131541 T DE 69131541T DE 69131541 T DE69131541 T DE 69131541T DE 69131541 D1 DE69131541 D1 DE 69131541D1
Authority
DE
Germany
Prior art keywords
semiconductor device
breakdown voltage
electrostatic breakdown
increased electrostatic
increased
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69131541T
Other languages
English (en)
Other versions
DE69131541T2 (de
Inventor
Satoshi Ohtani
Masayuki Yoshida
Nobutaka Kitagawa
Tomotaka Saito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69131541D1 publication Critical patent/DE69131541D1/de
Publication of DE69131541T2 publication Critical patent/DE69131541T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69131541T 1990-03-02 1991-02-28 Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung Expired - Fee Related DE69131541T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4946190 1990-03-02

Publications (2)

Publication Number Publication Date
DE69131541D1 true DE69131541D1 (de) 1999-09-30
DE69131541T2 DE69131541T2 (de) 2000-01-13

Family

ID=12831785

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69131541T Expired - Fee Related DE69131541T2 (de) 1990-03-02 1991-02-28 Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung

Country Status (4)

Country Link
US (1) US5239194A (de)
EP (1) EP0444686B1 (de)
KR (1) KR940004449B1 (de)
DE (1) DE69131541T2 (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2878587B2 (ja) * 1993-10-20 1999-04-05 株式会社日立製作所 半導体装置
JPH07321306A (ja) * 1994-03-31 1995-12-08 Seiko Instr Inc 半導体装置およびその製造方法
TW308733B (de) * 1995-07-20 1997-06-21 Siemens Ag
US5929491A (en) * 1995-07-20 1999-07-27 Siemens Aktiengesellschaft Integrated circuit with ESD protection
JPH1187727A (ja) * 1997-09-12 1999-03-30 Mitsubishi Electric Corp 半導体装置
JP4054093B2 (ja) 1997-10-09 2008-02-27 株式会社ルネサステクノロジ 半導体装置
US6815775B2 (en) 2001-02-02 2004-11-09 Industrial Technology Research Institute ESD protection design with turn-on restraining method and structures
US7244992B2 (en) * 2003-07-17 2007-07-17 Ming-Dou Ker Turn-on-efficient bipolar structures with deep N-well for on-chip ESD protection
CN110223979B (zh) * 2019-07-17 2021-07-09 昆山国显光电有限公司 静电保护电路、显示面板和显示装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5671975A (en) * 1979-11-16 1981-06-15 Matsushita Electric Ind Co Ltd Mos type semiconductor system
JPS5833870A (ja) * 1981-08-24 1983-02-28 Hitachi Ltd 半導体装置
JPS59121976A (ja) * 1982-12-28 1984-07-14 Fujitsu Ltd 半導体装置
JPH0695563B2 (ja) * 1985-02-01 1994-11-24 株式会社日立製作所 半導体装置
US4918501A (en) * 1984-05-23 1990-04-17 Hitachi, Ltd. Semiconductor device and method of producing the same
JPS61216477A (ja) * 1985-03-22 1986-09-26 Nec Corp 半導体装置
US4734752A (en) * 1985-09-27 1988-03-29 Advanced Micro Devices, Inc. Electrostatic discharge protection device for CMOS integrated circuit outputs
JPS63122175A (ja) * 1986-11-11 1988-05-26 Oki Electric Ind Co Ltd Ｍｏｓ電界効果トランジスタ

Also Published As

Publication number Publication date
KR910017623A (ko) 1991-11-05
US5239194A (en) 1993-08-24
EP0444686A1 (de) 1991-09-04
DE69131541T2 (de) 2000-01-13
KR940004449B1 (ko) 1994-05-25
EP0444686B1 (de) 1999-08-25

Similar Documents

Publication Publication Date Title
DE69224709D1 (de) Halbleiteranordnung mit verbesserter Durchbruchspannungs-Charakteristik
DE69319549D1 (de) Spannungsgesteuerte Halbleiteranordnung
DE69029180D1 (de) Transistor mit Spannungsbegrenzungsanordnung
DE69315239D1 (de) VDMOS-Transistor mit verbesserter Durchbruchsspannungscharakteristik
DE69230346D1 (de) Konstantspannungsschaltung
DE69231039D1 (de) Halbleiteranordnungzusammenbau
DE69313718D1 (de) Elektrostatisches Voltmeter mit integrierten Hochspannungs-Schaltungen
DE69317940D1 (de) Halbleiterbauelement mit Kondensator
DE69418365D1 (de) Hochspannung-MIS-Feldeffekttransistor
DE69218753D1 (de) Halbleiteranordnung mit Feldplatten
DE69414305D1 (de) Hochspannungs-Halbleiterstruktur
DE69231832D1 (de) Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET
DE69617651D1 (de) Halbleiteranordnung mit einem Element hoher Zusammenbruchsspannung
DE69131541D1 (de) Halbleiterbauelement mit vergrösserter elektrostatischer Durchbruchspannung
DE69219405D1 (de) Halbleiteranordnung mit hoher Durchbruchsspannung
DE69033960D1 (de) Halbleiterbauelement mit MIS-Kondensator
DE69408772D1 (de) Halbleitervorrichtung mit schnellen lateralem DMOST mit Hochspannungs-Sourceelektrode
KR890017810A (ko) 낮은 내부동작전압을 갖는 반도체장치
DE69233742D1 (de) Halbleiterbauelement mit hoher Durchbruchspannung
DE69212889D1 (de) Konstantspannungsschaltkreis
DE69214303D1 (de) Konstante Spannungsgeneratorschaltung
DE69224136D1 (de) Spannungsgeneratoreinrichtung
DE59106008D1 (de) Hochspannungsgerät.
DE59205727D1 (de) Hochspannungstransistor
DE69209744D1 (de) Hochspannungsgenerator

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee