DE69231832D1 - Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET - Google Patents

Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET

Info

Publication number
DE69231832D1
DE69231832D1 DE69231832T DE69231832T DE69231832D1 DE 69231832 D1 DE69231832 D1 DE 69231832D1 DE 69231832 T DE69231832 T DE 69231832T DE 69231832 T DE69231832 T DE 69231832T DE 69231832 D1 DE69231832 D1 DE 69231832D1
Authority
DE
Germany
Prior art keywords
semiconductor device
high voltage
device equipped
voltage misfet
misfet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69231832T
Other languages
English (en)
Other versions
DE69231832T2 (de
Inventor
Tatsuhiko Fujihira
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Application granted granted Critical
Publication of DE69231832D1 publication Critical patent/DE69231832D1/de
Publication of DE69231832T2 publication Critical patent/DE69231832T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H01L29/1087—Substrate region of field-effect devices of field-effect transistors with insulated gate characterised by the contact structure of the substrate region, e.g. for controlling or preventing bipolar effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1075—Substrate region of field-effect devices of field-effect transistors
    • H01L29/1079—Substrate region of field-effect devices of field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
DE69231832T 1991-07-19 1992-07-20 Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET Expired - Lifetime DE69231832T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17985991A JP3206026B2 (ja) 1991-07-19 1991-07-19 高電圧用ｍｉｓｆｅｔを備える半導体装置

Publications (2)

Publication Number Publication Date
DE69231832D1 true DE69231832D1 (de) 2001-06-28
DE69231832T2 DE69231832T2 (de) 2001-11-22

Family

ID=16073165

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69231832T Expired - Lifetime DE69231832T2 (de) 1991-07-19 1992-07-20 Halbleiteranordnung ausgerüstet mit einem Hochspannungs-MISFET

Country Status (4)

Country Link
US (1) US5319236A (de)
EP (1) EP0524030B1 (de)
JP (1) JP3206026B2 (de)
DE (1) DE69231832T2 (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274259A (en) * 1993-02-01 1993-12-28 Power Integrations, Inc. High voltage transistor
JP3307481B2 (ja) * 1993-11-05 2002-07-24 三菱電機株式会社 半導体装置
US5349223A (en) * 1993-12-14 1994-09-20 Xerox Corporation High current high voltage vertical PMOS in ultra high voltage CMOS
DE4405631C1 (de) * 1994-02-22 1995-07-20 Bosch Gmbh Robert Integriertes Bauelement
US5903032A (en) * 1994-05-13 1999-05-11 Texas Instruments Incorporated Power device integration for built-in ESD robustness
JP4775357B2 (ja) * 1995-04-12 2011-09-21 富士電機株式会社 高耐圧ｉｃ
JP3528420B2 (ja) * 1996-04-26 2004-05-17 株式会社デンソー 半導体装置およびその製造方法
JPH11297847A (ja) * 1998-04-13 1999-10-29 Nec Kyushu Ltd 半導体装置及びその製造方法
GB2340999A (en) * 1998-08-28 2000-03-01 Ericsson Telefon Ab L M Isolating MOS transistors from substrates
DE19957532A1 (de) * 1999-11-30 2001-06-07 Infineon Technologies Ag Halbleiterschaltungsanordnung und Verfahren zur Herstellung
JP2002270830A (ja) * 2001-03-12 2002-09-20 Fuji Electric Co Ltd 半導体装置
JP4166010B2 (ja) * 2001-12-04 2008-10-15 富士電機デバイステクノロジー株式会社 横型高耐圧ｍｏｓｆｅｔ及びこれを備えた半導体装置
JP4508606B2 (ja) * 2003-03-20 2010-07-21 株式会社リコー 複数種類のウエルを備えた半導体装置の製造方法
JP4841106B2 (ja) 2003-08-28 2011-12-21 ルネサスエレクトロニクス株式会社 Ｍｉｓ型半導体装置及びその製造方法
DE102004009521B4 (de) * 2004-02-27 2020-06-10 Austriamicrosystems Ag Hochvolt-PMOS-Transistor, Maske zur Herstellung einer Wanne und Verfahren zur Herstellung eines Hochvolt-PMOS-Transistors
JP2006054247A (ja) * 2004-08-10 2006-02-23 Fuji Electric Device Technology Co Ltd 半導体装置
JP4611270B2 (ja) * 2006-09-27 2011-01-12 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
CN107452735B (zh) * 2017-09-07 2024-05-07 湖南静芯微电子技术有限公司 一种嵌入无沟道型ldpmos的双向可控硅静电防护器件

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01147854A (ja) * 1987-12-04 1989-06-09 Nissan Motor Co Ltd 半導体装置
US5047358A (en) * 1989-03-17 1991-09-10 Delco Electronics Corporation Process for forming high and low voltage CMOS transistors on a single integrated circuit chip
US5008719A (en) * 1989-10-20 1991-04-16 Harris Corporation Dual layer surface gate JFET having enhanced gate-channel breakdown voltage

Also Published As

Publication number Publication date
DE69231832T2 (de) 2001-11-22
US5319236A (en) 1994-06-07
JP3206026B2 (ja) 2001-09-04
EP0524030B1 (de) 2001-05-23
JPH0529620A (ja) 1993-02-05
EP0524030A2 (de) 1993-01-20
EP0524030A3 (de) 1995-03-22

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8320 Willingness to grant licences declared (paragraph 23)
8327 Change in the person/name/address of the patent owner

Owner name: FUJI ELECTRIC SYSTEMS CO., LTD., TOKYO/TOKIO, JP

R071 Expiry of right

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