DE69232912T2 - Halbleitergehäuse - Google Patents

Halbleitergehäuse

Info

Publication number
DE69232912T2
DE69232912T2 DE69232912T DE69232912T DE69232912T2 DE 69232912 T2 DE69232912 T2 DE 69232912T2 DE 69232912 T DE69232912 T DE 69232912T DE 69232912 T DE69232912 T DE 69232912T DE 69232912 T2 DE69232912 T2 DE 69232912T2
Authority
DE
Germany
Prior art keywords
semiconductor packages
packages
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69232912T
Other languages
English (en)
Other versions
DE69232912D1 (de
Inventor
Mitsuyoshi Endo
Hironori Asai
Keiichi Yano
Yoshitoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP04127280A external-priority patent/JP3128324B2/ja
Application filed by Toshiba Corp filed Critical Toshiba Corp
Application granted granted Critical
Publication of DE69232912D1 publication Critical patent/DE69232912D1/de
Publication of DE69232912T2 publication Critical patent/DE69232912T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/15—Ceramic or glass substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/367—Cooling facilitated by shape of device
    • H01L23/3675—Cooling facilitated by shape of device characterised by the shape of the housing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3731—Ceramic materials or glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15312—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a pin array, e.g. PGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding
DE69232912T 1991-11-28 1992-11-27 Halbleitergehäuse Expired - Fee Related DE69232912T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP31460191 1991-11-28
JP31699991 1991-11-29
JP04127280A JP3128324B2 (ja) 1992-05-20 1992-05-20 半導体用セラミックス多層パッケージ

Publications (2)

Publication Number Publication Date
DE69232912D1 DE69232912D1 (de) 2003-03-06
DE69232912T2 true DE69232912T2 (de) 2003-12-24

Family

ID=27315500

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69232912T Expired - Fee Related DE69232912T2 (de) 1991-11-28 1992-11-27 Halbleitergehäuse

Country Status (4)

Country Link
US (1) US5703397A (de)
EP (2) EP0714127B1 (de)
KR (1) KR970000218B1 (de)
DE (1) DE69232912T2 (de)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6861290B1 (en) * 1995-12-19 2005-03-01 Micron Technology, Inc. Flip-chip adaptor package for bare die
US6046499A (en) * 1996-03-27 2000-04-04 Kabushiki Kaisha Toshiba Heat transfer configuration for a semiconductor device
US6795120B2 (en) * 1996-05-17 2004-09-21 Sony Corporation Solid-state imaging apparatus and camera using the same
JP3129288B2 (ja) * 1998-05-28 2001-01-29 日本電気株式会社 マイクロ波集積回路マルチチップモジュール、マイクロ波集積回路マルチチップモジュールの実装構造
WO2000008686A2 (de) 1998-08-05 2000-02-17 Infineon Technologies Ag Substrat für hochspannungsmodule
JP3445511B2 (ja) * 1998-12-10 2003-09-08 株式会社東芝 絶縁基板、その製造方法およびそれを用いた半導体装置
US6246583B1 (en) * 1999-03-04 2001-06-12 International Business Machines Corporation Method and apparatus for removing heat from a semiconductor device
US7638346B2 (en) 2001-12-24 2009-12-29 Crystal Is, Inc. Nitride semiconductor heterostructures and related methods
US8545629B2 (en) 2001-12-24 2013-10-01 Crystal Is, Inc. Method and apparatus for producing large, single-crystals of aluminum nitride
JP2003243797A (ja) * 2002-02-19 2003-08-29 Matsushita Electric Ind Co Ltd モジュール部品
US6943436B2 (en) * 2003-01-15 2005-09-13 Sun Microsystems, Inc. EMI heatspreader/lid for integrated circuit packages
US6956285B2 (en) * 2003-01-15 2005-10-18 Sun Microsystems, Inc. EMI grounding pins for CPU/ASIC chips
TW588444B (en) * 2003-04-17 2004-05-21 Ftech Corp Method of forming package structure with cavity
JP4664670B2 (ja) * 2004-12-24 2011-04-06 株式会社東芝 半導体装置
CN101331249B (zh) 2005-12-02 2012-12-19 晶体公司 掺杂的氮化铝晶体及其制造方法
US9034103B2 (en) 2006-03-30 2015-05-19 Crystal Is, Inc. Aluminum nitride bulk crystals having high transparency to ultraviolet light and methods of forming them
CN107059116B (zh) 2007-01-17 2019-12-31 晶体公司 引晶的氮化铝晶体生长中的缺陷减少
US9771666B2 (en) 2007-01-17 2017-09-26 Crystal Is, Inc. Defect reduction in seeded aluminum nitride crystal growth
US8080833B2 (en) 2007-01-26 2011-12-20 Crystal Is, Inc. Thick pseudomorphic nitride epitaxial layers
JP5730484B2 (ja) 2007-01-26 2015-06-10 クリスタル アイエス インコーポレイテッド 厚みのある擬似格子整合型の窒化物エピタキシャル層
US8980398B2 (en) * 2007-04-24 2015-03-17 CeramTee GmbH Component having a ceramic base with a metalized surface
JP5649957B2 (ja) * 2007-04-24 2015-01-07 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ メタライジングされている表面を有するセラミックボディを備えた構成部材
JP2011514663A (ja) * 2008-01-31 2011-05-06 レイセオン カンパニー 部品の熱伝達のための方法及び装置
CN101677486A (zh) * 2008-09-19 2010-03-24 鸿富锦精密工业（深圳）有限公司 印刷电路板及其制作方法
CN105951177B (zh) 2010-06-30 2018-11-02 晶体公司 使用热梯度控制的大块氮化铝单晶的生长
JP5521862B2 (ja) 2010-07-29 2014-06-18 三菱電機株式会社 半導体装置の製造方法
US8962359B2 (en) 2011-07-19 2015-02-24 Crystal Is, Inc. Photon extraction from nitride ultraviolet light-emitting devices
CN108511567A (zh) 2013-03-15 2018-09-07 晶体公司 与赝配电子和光电器件的平面接触
CN105027276B (zh) * 2013-07-31 2018-03-06 富士电机株式会社 半导体装置
JP2015041437A (ja) * 2013-08-20 2015-03-02 船井電機株式会社 照明装置及び表示装置
FR3059152B1 (fr) * 2016-11-21 2019-01-25 Commissariat A L'energie Atomique Et Aux Energies Alternatives Dispositif de transfert thermique, de connexion electrique et dispositif electronique
CN107148161A (zh) * 2017-05-27 2017-09-08 中国运载火箭技术研究院 电子元器件管脚尺寸转换器及其制作方法
CN112133677B (zh) * 2020-10-20 2023-01-17 深圳市昌豪微电子有限公司 一种具有防水稳压密封的半导体三极管
CN114823549B (zh) * 2022-06-27 2022-11-11 北京升宇科技有限公司 一种纵向场效应晶体管vdmos芯片的封装结构及封装方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3916434A (en) * 1972-11-30 1975-10-28 Power Hybrids Inc Hermetically sealed encapsulation of semiconductor devices
US4417392A (en) * 1980-05-15 1983-11-29 Cts Corporation Process of making multi-layer ceramic package
JPS5818944A (ja) * 1981-07-25 1983-02-03 Nec Corp 半導体装置
UST105403I4 (en) * 1982-09-07 1985-05-07 Method of manufacturing a sealing cap for an integrated circuit carrying substrate
JPS59114845A (ja) * 1982-12-21 1984-07-03 Nec Corp 諸特性の改善された容器を用いた半導体装置
JPS60183746A (ja) * 1984-03-02 1985-09-19 Hitachi Ltd 半導体装置
JPS61239649A (ja) * 1985-04-13 1986-10-24 Fujitsu Ltd 高速集積回路パツケ−ジ
JPH07114245B2 (ja) * 1986-10-17 1995-12-06 株式会社東芝 半導体外囲器
US4753820A (en) * 1986-10-20 1988-06-28 United Technologies Corporation Variable pitch IC bond pad arrangement
US4833102A (en) * 1987-03-17 1989-05-23 National Semiconductor Corporation Process of making a ceramic lid for use in a hermetic seal package
JPS6428853A (en) * 1987-07-24 1989-01-31 Hitachi Ltd Semiconductor device
JPH01111360A (ja) * 1987-10-26 1989-04-28 Fujitsu Ltd 半導体装置
JPH0756887B2 (ja) * 1988-04-04 1995-06-14 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
JPH01272140A (ja) * 1988-04-25 1989-10-31 Hitachi Ltd 半導体装置
JP2592308B2 (ja) * 1988-09-30 1997-03-19 株式会社日立製作所 半導体パッケージ及びそれを用いたコンピュータ
JP2772001B2 (ja) * 1988-11-28 1998-07-02 株式会社日立製作所 半導体装置
DE69006609T2 (de) * 1989-03-15 1994-06-30 Ngk Insulators Ltd Keramischer Deckel zum Verschliessen eines Halbleiterelements und Verfahren zum Verschliessen eines Halbleiterelements in einer keramischen Packung.
JPH0311653A (ja) * 1989-06-07 1991-01-18 Nec Yamagata Ltd 半導体装置
US5045639A (en) * 1990-08-21 1991-09-03 Tong Hsing Electronic Industries Ltd. Pin grid array package
DE4115316A1 (de) * 1990-09-07 1992-03-12 Telefunken Systemtechnik Duennfilm-mehrlagenschaltung und verfahren zur herstellung von duennfilm-mehrlagenschaltungen
CA2089435C (en) * 1992-02-14 1997-12-09 Kenzi Kobayashi Semiconductor device

Also Published As

Publication number Publication date
EP0714127A3 (de) 1996-07-31
US5703397A (en) 1997-12-30
KR970000218B1 (ko) 1997-01-06
EP0714127B1 (de) 2003-01-29
EP0714127A2 (de) 1996-05-29
EP0544329A3 (en) 1993-09-01
KR930011178A (ko) 1993-06-23
EP0544329A2 (de) 1993-06-02
DE69232912D1 (de) 2003-03-06

Similar Documents

Publication Publication Date Title
KR930012117U (ko) 반도체 패키지
DE69232912D1 (de) Halbleitergehäuse
DE69226398T2 (de) Halbleiterchip-Verpackung
DE69229546D1 (de) Halbleiteranordnung
DE69231409D1 (de) Oberflächenmontierbare Halbleiterpackung
DE69322140D1 (de) Halbleiterpackung
DE69226742T2 (de) Halbleitervorrichtung
DE69124399D1 (de) Halbleitervorrichtung
KR930003589U (ko) 반도체 패키지용 캐리어
KR930009747U (ko) 반도체장치
DE69222084D1 (de) Oberflächenmontierbare Halbleiterpackung
DE69223017D1 (de) Verbindungshalbleiterbauelement
DE69210935D1 (de) Halbleiteranordnung
DE69227663T2 (de) Halbleitereinrichtung
DE69432168T2 (de) Halbleitergehäuse
KR930016250U (ko) 반도체 패키지
KR940013675U (ko) 반도체 패키지
KR930024367U (ko) 반도체 패키지
KR920015767U (ko) H형 반도체 패키지
KR930016280U (ko) 고집적 패키지
KR930016252U (ko) 반도체 패키지용 리드프레임
DE69217326D1 (de) Verbindungshalbleiterbauelement
KR940013678U (ko) 반도체 패키지
KR930024375U (ko) 반도체 패키지
KR940013676U (ko) 반도체 패키지

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee