KR930011178A - 반도체 패키지 - Google Patents

반도체 패키지 Download PDF

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KR930011178A
KR930011178A KR1019920022771A KR920022771A KR930011178A KR 930011178 A KR930011178 A KR 930011178A KR 1019920022771 A KR1019920022771 A KR 1019920022771A KR 920022771 A KR920022771 A KR 920022771A KR 930011178 A KR930011178 A KR 930011178A
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aluminum nitride
semiconductor package
electrically connected
layer
nitride substrate
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KR1019920022771A
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KR970000218B1 (ko
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미츠요시 엔도
히로노리 아사이
케이치 야노
요시토시 사토
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사토 후미오
가부시키가이샤 도시바
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Abstract

본 발명은 반도체패키지에 관한 것으로서, 한쪽면에 반도체소자를 탑재하고 그 반도체소자와 전기적으로 접속된 배선 패턴을 갖는 질화알루미늄기판, 상기 배선패턴과 접속되는 동시에 이미 상기 질화알루미늄기판의 이미 한쪽면에 설치된 접합단자, 상기 반도체소자를 봉지하도록 상기의 질화알루미늄기판에 접합부의 열저항이 10℃/W 이하로 되도록 금속접합제에 의해 접합된 봉지부재로 이루어진 반도체 세라믹 다층패키지로 방열성이 대폭으로 개선되어 다핀화 및 패키지의 소형화를 가능하게한 것을 특징으로 한다.

Description

반도체 패키지
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 한 실시예의 반도체 패키지의 구성을 도시한 단면도.
제2도는 본 발명의 다른 실시예의 반도체 패키지 구성을 도시한 단면도.
제3도는 제2도에 도시한 반도체 패키지 하면을 도시한 평면도.
제4도는 본 발명의 또다른 실시예의 반도체 패키지 구성을 도시한 단면도.

Claims (15)

  1. 한쪽면에 반도체소자가 탑재되고 상기 반도체소자와 전기적으로 접속되어 있는 배선패턴을 갖는 질화알루미늄기판, 상기 배선패턴과 전기적으로 접속되어 있고 상기 질화알루미늄기판의 다른쪽면에 설치된 다수의 접속단자, 및 상기 반도체소자를 봉지하도록 상기 질화알루미늄기판의 한쪽면에 접합층을 통해 접합된 세라믹봉지부재로 구성되며, 상기 접합층은 금속층으로 이루어진 것을 특징으로 하는 반도체패키지.
  2. 제1항에 있어서, 상기 금속층은 Au－Sn 합금층인 것을 특징으로 하는 반도체패키지.
  3. 한쪽면에 반도체소자가 탑재되고 상기 반도체소자와 전기적으로 접속되어 있는 배선패턴을 갖는 질화알루미늄기판, 상기 배선패턴과 전기적으로 접속되어 있으며 상기 질화알루미늄기판의 다른면에 설치된 다수의 접속단자, 및 상기 반도체소자를 봉지하도록 상기 질화알루미늄기판의 한쪽면에 접합층을 통해 접합된 세라믹봉지부재로 구성되며, 상기 접합층은 두께 100㎛ 이하의 글라스층인 것을 특징으로 하는 반도체 패키지.
  4. 제1항 또는 제3항에 있어서, 상기 세라믹봉지부재는 딘면 그 형상의 형상을 갖고 있는 것을 특징으로 하는 반도체패키지.
  5. 제1항 또는 제3항에 있어서, 상기 반도체소자를 탑재한 알루미늄기판은 평면기판인 것을 특징으로하는 반도체패키지.
  6. 제1항 또는 제3항에 있어서, 상기 세라믹봉지부재는 알루미늄으로 형성되어 있는 것을 특징으로 하는 반도체패키지.
  7. 한쪽면에 반도체소자가 탑재되고 상기 반도체소자와 전기적으로 접속된 배선패턴을 갖는 질화알루미늄기판, 상기 배선패턴과 전기적으로 접속되어 있으며 상기 질화알루미늄기판의 다른면에 격자상으로 배열되어 설치된 다수의 접합단자, 및 상기 반도체소자를 봉지하도록 상기 질화알루미늄기판의 한쪽면에 접합된 봉지부재로 이루어지고, 격자상으로 배열된 인접한 접속단자의 중심사이의 거리는 1.27mm(50mil)이하로 설정되어 있는 것을 특징으로 하는 반도체패키지.
  8. 제7항에 있어서, 상기 봉지부재는 세라믹봉지부재로 형성되어 있는 것을 특징으로 하는 반도체패키지.
  9. 제8항에 있어서, 상기 봉지부재는 질화알루미늄으로 형성되어 있는 것을 특징으로 하는 반도체패키지.
  10. 한쪽면에 반도체소자가 탑재되고 상기 반도체소자와 전기적으로 접속된 배선패턴을 갖는 질화알루미늄기판, 상기 배선패턴과 전기적으로 접속됨과 동시에 상기 질화알루미늄기판의 다른쪽면에 격자상으로 배열되어 설치된 다수의 접속단자, 및 상기 반도체를 봉지하도록 상기 질화알루미늄기판의 한쪽면에 접합된 봉지부재로 이루어져 있으며, 상기 질화알루미늄기판의 외연에서 상기 접속단자까지의 거리는 상기 격자상으로 배열된 인접하는 접속단자의 중심사이의 고리보다도 크게 설정되어 있는 것을 특징으로 하는 반도체패키지.
  11. 반도체소자가 탑재되고 상기 반도체소자와 전기적으로 접속된 배선패턴을 갖는 질화알루미늄 다층기판, 상기 반도체 소자를 봉지하도록 상기 질화알루미늄 다층기판에 접합된 봉지부재, 및 상기 배선패턴과 전기적으로 접속됨과 동시에 상기 질화알루미늄 다층기판의 한쪽 또는 다른쪽면에 설치된 다수의 접속단자로 이루어진 반도체패키지에 있어서, 상기 질화알루미늄 다층기판은 내부배선이 설치된 질화알루미늄 배선층과 내부배선층을 포함하지 않는 질화알루미늄 전열층이 두께방향으로 적층 일체화되어 구성되어 있는 것을 특징으로 하는 반도체패키지.
  12. 제11항에 있어서, 상기 내부배선층을 포함하지 않는 질화알루미늄 전열층의 두께는 상기 내부배선층이 설치된 질화알루미늄 배선층의 두께보다도 크게한 것을 특징으로 하는 반도체패키지.
  13. 한쪽면에 반도체소자가 탑재되어 상기 반도체소자와 전기적으로 접속된 신호배선층을 갖는 질화알루미늄다층기판, 상기 신호배선층과 전기적으로 접속되어 있으며 상기 질화알루미늄 다층기판의 다른쪽면에 격자상으로 배열되어 설치된 다수의 접속단자, 및 상기 신호배선층은 비어홀에 의해 접속되어 있고 상기 질화알루미늄다층기판표면에 설치된 표면신호배선층과 상기 질화알루미늄 다층기판의 내부에 설치된 내부신호배선층으로 이루어지고, 상기 표면신호층의 길이가 전체신호배선층의 길이의 1/2이하로 이루어진 것을 특징으로 하는 반도체패키지.
  14. 제13항에 있어서, 상기 표면신호배선층은 한쪽의 단부에 접속패드가 설치되어 있고, 상기 비어홀은 상기 접속패드가 배열하여 형성된 열의 양측에 설치되어 있는 것을 특징으로 하는 반도체패키지.
  15. 제13항에 있어서, 상기 표면신호배선층의 길이는 상기 전체신호배선층 길이의 1/4이하인 것을 특징으로하는 반도체패키지.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019920022771A 1991-11-28 1992-11-28 반도체 패키지 KR970000218B1 (ko)

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