JPS61239649A - 高速集積回路パツケ−ジ - Google Patents
高速集積回路パツケ−ジInfo
- Publication number
- JPS61239649A JPS61239649A JP60077549A JP7754985A JPS61239649A JP S61239649 A JPS61239649 A JP S61239649A JP 60077549 A JP60077549 A JP 60077549A JP 7754985 A JP7754985 A JP 7754985A JP S61239649 A JPS61239649 A JP S61239649A
- Authority
- JP
- Japan
- Prior art keywords
- integrated circuit
- wirings
- speed
- wiring
- semiconductor integrated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 2
- 238000010276 construction Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 6
- 239000003973 paint Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000001902 propagating effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
- H05K2201/10621—Components characterised by their electrical contacts
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4046—Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
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Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。
め要約のデータは記録されません。
Description
【発明の詳細な説明】
〔概要〕
半導体集積回路チップを搭載した多層配線基板に於ける
層間配線の接続部を、伝搬される信号の種類に対応して
インダクタンス成分が異なるように構成し、高速動作の
半導体集積回路チップによる動作特性を改善したもので
ある。
層間配線の接続部を、伝搬される信号の種類に対応して
インダクタンス成分が異なるように構成し、高速動作の
半導体集積回路チップによる動作特性を改善したもので
ある。
本発明は、数Gビット/S程度の高速データを
゛ □、□ 処理する半導体集積回路チップを多層配線基板上
6、。
゛ □、□ 処理する半導体集積回路チップを多層配線基板上
6、。
に搭載して気密封止した高速集積回路パンケージ
′−゛□ ;、・ に関するものである。
1st(シリコン)やGaAs (ガリ
ウム砒素)7、等の半導体チップに複数のトランジスタ
等を形成 ゛して、数Gビット/S程度
の高速データ処理を行う半導体集積回路チップが製作さ
れており、このような半導体集積回路チップは、信頼性
確保の為にパッケージによって気密封止する必要がある
。
′−゛□ ;、・ に関するものである。
1st(シリコン)やGaAs (ガリ
ウム砒素)7、等の半導体チップに複数のトランジスタ
等を形成 ゛して、数Gビット/S程度
の高速データ処理を行う半導体集積回路チップが製作さ
れており、このような半導体集積回路チップは、信頼性
確保の為にパッケージによって気密封止する必要がある
。
高速集積回路パッケージは、例えば、第3図の概略断面
図に示すように、多層配線基板15上に半導体集積回路
チップ18を搭載し、この半導体集積回路チップ18と
外部端子となる配線17とを金線等の接続線19で接続
し、多層配線基板の周辺に絶縁体20を介して金属のキ
ャンプ21を接合して、半導体集積回路チップ18を気
密封止するものである。なお、16はアース等となる下
面の金属配線である。
図に示すように、多層配線基板15上に半導体集積回路
チップ18を搭載し、この半導体集積回路チップ18と
外部端子となる配線17とを金線等の接続線19で接続
し、多層配線基板の周辺に絶縁体20を介して金属のキ
ャンプ21を接合して、半導体集積回路チップ18を気
密封止するものである。なお、16はアース等となる下
面の金属配線である。
半導体集積回路チップ18を搭載する多層配線基板15
は、例えば、グリーンシートの状態で所望の配線を施し
且つ」二下層の配線の接続用のスルーポールを形成し、
順次積層して焼成するものである。その場合の各層の配
線の幅は同一で且つ層間の配線を接続する為のスルーホ
ールの直径も同一である。
は、例えば、グリーンシートの状態で所望の配線を施し
且つ」二下層の配線の接続用のスルーポールを形成し、
順次積層して焼成するものである。その場合の各層の配
線の幅は同一で且つ層間の配線を接続する為のスルーホ
ールの直径も同一である。
多層配線基板15には、半導体集積回路チ、ツブ18上
のトランジスタ等に電源を供給する為の配線や、高速信
号が伝搬する配線が混在しているものであり、前述のよ
うに、これらの配線の幅及び各層の配線間を接続する為
の接続部の直径も同一 □である。即ち、従来は、直
流電流が流れる径路も、高周波信号が流れる径路も同一
の構成のものである。その為、高速動作可能の半導体集
積回路チップ18の特性を充分に引き出すことが困難で
あった。
のトランジスタ等に電源を供給する為の配線や、高速信
号が伝搬する配線が混在しているものであり、前述のよ
うに、これらの配線の幅及び各層の配線間を接続する為
の接続部の直径も同一 □である。即ち、従来は、直
流電流が流れる径路も、高周波信号が流れる径路も同一
の構成のものである。その為、高速動作可能の半導体集
積回路チップ18の特性を充分に引き出すことが困難で
あった。
1 ′″Q19[・*II’/It(KM (
7)i’th l i’kH(D 479’ 9タンス
成分を小さくし、電源供給用の径路のインダクタンス成
分を大きくして、高速動作の半導体集積回路チップの特
性を充分に発揮させることを目的とするものである。
7)i’th l i’kH(D 479’ 9タンス
成分を小さくし、電源供給用の径路のインダクタンス成
分を大きくして、高速動作の半導体集積回路チップの特
性を充分に発揮させることを目的とするものである。
C問題点を解決するための手段〕
本発明の高速集積回路パッケージは、第1図を参照して
説明すると、半導体集積回路チップを搭載する多層配線
基板の高周波信号が伝搬する配線la、lb、Ic間を
接続する接続部4a、4bの直径を大きくしてインダク
タンス成分を小さくし、又電源供給用の配線2a、
2b、2C間を接続する接続部5a、5bの直径を小さ
く或いは長さを長くしてインダクタンス成分を大きくし
たものである。
説明すると、半導体集積回路チップを搭載する多層配線
基板の高周波信号が伝搬する配線la、lb、Ic間を
接続する接続部4a、4bの直径を大きくしてインダク
タンス成分を小さくし、又電源供給用の配線2a、
2b、2C間を接続する接続部5a、5bの直径を小さ
く或いは長さを長くしてインダクタンス成分を大きくし
たものである。
高周波信号が伝搬する配線間は、インダクタンス成分の
小さい接続部4a、4bで接続されるので、伝搬遅延を
受けることが少なくなり、それによって高速動作の半導
体集積回路チップの特性を充分に引き出すことができ、
又電源供給用の配線間は、インダクタンス成分の大きい
接続部5a。
小さい接続部4a、4bで接続されるので、伝搬遅延を
受けることが少なくなり、それによって高速動作の半導
体集積回路チップの特性を充分に引き出すことができ、
又電源供給用の配線間は、インダクタンス成分の大きい
接続部5a。
5bで接続されるので、電源供給用の配線に重畳される
高周波信号を減衰させ、異なる電源間のアイソレーショ
ン特性を向上させることができる。
高周波信号を減衰させ、異なる電源間のアイソレーショ
ン特性を向上させることができる。
以下図面を参照して、本発明の実施例について詳細に説
明する。
明する。
第1図は本発明の実施例の要部断面図であり、半導体集
積回路チップやキャップ等の図示を省略している。セラ
ミック等の絶縁基板6に、各層の配線1a、lb、lc
、2a、2b、2c、3a、3bが形成され、配線1a
、Ib、lcには高周波信号が伝搬し、配線2a、2b
、2cには電源供給用として直流電流が流れるものとす
ると、高周波信号が伝搬する配線1a、l’b’、lc
間を接続する接続部4a、4bの直径を大きくしてイン
ダクタンス成分を小さくし、又直流電流のみが流れる配
線2a、 2b、’lc間を接続する接続部5a、5
bの直径を小さく或いは長くしてインダクタンス成分を
大きくするものである。
積回路チップやキャップ等の図示を省略している。セラ
ミック等の絶縁基板6に、各層の配線1a、lb、lc
、2a、2b、2c、3a、3bが形成され、配線1a
、Ib、lcには高周波信号が伝搬し、配線2a、2b
、2cには電源供給用として直流電流が流れるものとす
ると、高周波信号が伝搬する配線1a、l’b’、lc
間を接続する接続部4a、4bの直径を大きくしてイン
ダクタンス成分を小さくし、又直流電流のみが流れる配
線2a、 2b、’lc間を接続する接続部5a、5
bの直径を小さく或いは長くしてインダクタンス成分を
大きくするものである。
高周波信号が伝搬する配線1a、lb、lc間はインダ
クタンス成分の小さい接続部4a、4bにより接続され
るものであるから、高速動作の半導体集積回路チップへ
の入力データ又は出力データの遅延や波形歪が小さくな
り、高速動作の半導体集積回路チップの特性を充分に引
き出すことができる。
クタンス成分の小さい接続部4a、4bにより接続され
るものであるから、高速動作の半導体集積回路チップへ
の入力データ又は出力データの遅延や波形歪が小さくな
り、高速動作の半導体集積回路チップの特性を充分に引
き出すことができる。
又電源供給用としての配線2a、 2b、2C間はイ
ンダクタンス成分の大きい接続部5a、5bにより接続
されるものであるから、半導体集積回 1
路チツプに対する電源供給用の配線に於ける耐雑音特性
を向上することができる。この接続部5a
゛。
ンダクタンス成分の大きい接続部5a、5bにより接続
されるものであるから、半導体集積回 1
路チツプに対する電源供給用の配線に於ける耐雑音特性
を向上することができる。この接続部5a
゛。
、5bは、インダクタンス成分を大きくする為に、その
長さを5bのように長くすることもでき、
。
長さを5bのように長くすることもでき、
。
又接続用の孔内に螺旋、或いは折返線路を形成す
。
。
ることもできる。
第2図は本発明の他の実施例の要部断面図であり、多層
配線基板のうちの一層について示すものである。同図に
於いて、10は絶縁基板、11゜12は配線、13はコ
イルである。これらの配線(6)
゛・11.12間はコイル13で接続さ
れている。このコイル13はインダクタンス成分を大き
くする為のものであり、例えば、グリーンシートに配線
間の接続用の孔を開け、この孔中に微細コイルを捩じ込
んで構成することができる。この微細コイルは、積層し
たグリーンシートの焼成温度に耐えられるようなタング
ステンやモリブデン等により構成することが好適である
。又この微細コイルと配線11.12との接続は、例え
ば、グリーンシート上に配線11.12を形成する導電
性塗料を塗布し、接続用孔に捩じ込んだ微細コイルの端
部にも導電性塗料を塗布して焼成すれば良いことになる
。
配線基板のうちの一層について示すものである。同図に
於いて、10は絶縁基板、11゜12は配線、13はコ
イルである。これらの配線(6)
゛・11.12間はコイル13で接続さ
れている。このコイル13はインダクタンス成分を大き
くする為のものであり、例えば、グリーンシートに配線
間の接続用の孔を開け、この孔中に微細コイルを捩じ込
んで構成することができる。この微細コイルは、積層し
たグリーンシートの焼成温度に耐えられるようなタング
ステンやモリブデン等により構成することが好適である
。又この微細コイルと配線11.12との接続は、例え
ば、グリーンシート上に配線11.12を形成する導電
性塗料を塗布し、接続用孔に捩じ込んだ微細コイルの端
部にも導電性塗料を塗布して焼成すれば良いことになる
。
コイルのインダクタンスI、は、
で表される。なお、Rはコイルの半径、Nは巻数、lは
コイルの長さ、μ、は比透磁率、Kは長岡係数である。
コイルの長さ、μ、は比透磁率、Kは長岡係数である。
1 例えば、配線11.12間の絶縁基板
10の厚さに対応して、コイルの長さj2−2500μ
m1接続用の孔の直径に対応して、コイルの半径Rを1
000μm1巻数Nを10とすると、インダクタンスし
は120 n Hとなり、1.8GT(zでは、インピ
ーダンスZは1.3にΩとなるから、電源供給用の配線
に、ノイズ除去等のインダクタンスを挿入した場合と同
じ構成となり、高速動作の半導体集積回路チップへの電
源供給用として、耐雑音特性を向上することができる。
10の厚さに対応して、コイルの長さj2−2500μ
m1接続用の孔の直径に対応して、コイルの半径Rを1
000μm1巻数Nを10とすると、インダクタンスし
は120 n Hとなり、1.8GT(zでは、インピ
ーダンスZは1.3にΩとなるから、電源供給用の配線
に、ノイズ除去等のインダクタンスを挿入した場合と同
じ構成となり、高速動作の半導体集積回路チップへの電
源供給用として、耐雑音特性を向上することができる。
以上説明したように、本発明は、半導体集積回路チップ
18を多層配線基板15に搭載してキャンプ21により
気密封止した高速集積回路パッケージに於いて、多層配
線基板15に於ける高周波信号が伝搬する配線1a、l
b、lc間を直径を大きくしてインダクタンス成分を小
さくした接続部4a、4bで接続し、電源供給用の配線
2a。
18を多層配線基板15に搭載してキャンプ21により
気密封止した高速集積回路パッケージに於いて、多層配
線基板15に於ける高周波信号が伝搬する配線1a、l
b、lc間を直径を大きくしてインダクタンス成分を小
さくした接続部4a、4bで接続し、電源供給用の配線
2a。
2b、2c間を、直径を小さく、或いは長さを長くして
インダクタンス成分を太き(した接続部5a、5bで接
続したものであり、多層配線基板を製作する時に、配線
の種類に対応して異なる大きさの接続用孔を形成するこ
とになるが、高速動作の半導体集積回路チ・ノブ18の
動作特性を阻害することなく、電源供給並びに信号の入
出力を行わせることができる利点がある。
インダクタンス成分を太き(した接続部5a、5bで接
続したものであり、多層配線基板を製作する時に、配線
の種類に対応して異なる大きさの接続用孔を形成するこ
とになるが、高速動作の半導体集積回路チ・ノブ18の
動作特性を阻害することなく、電源供給並びに信号の入
出力を行わせることができる利点がある。
第1図は本発明の実施例の要部断面図、第2図は本発明
の他の実施例の要部断面図、第3図は集積回路パッケー
ジの概略断面図である。 la、lb、lc、2a、2b、2c、3a。 3b、11.12は配線、4a、4b、5a、5bは接
続部、6.10は絶縁基板、13はコイル、15は多層
配線基板、16.17は配線、18は半導体集積回路チ
ップ、19は接続線、20は絶縁体、21はキャンプで
ある。
の他の実施例の要部断面図、第3図は集積回路パッケー
ジの概略断面図である。 la、lb、lc、2a、2b、2c、3a。 3b、11.12は配線、4a、4b、5a、5bは接
続部、6.10は絶縁基板、13はコイル、15は多層
配線基板、16.17は配線、18は半導体集積回路チ
ップ、19は接続線、20は絶縁体、21はキャンプで
ある。
Claims (1)
- 【特許請求の範囲】 半導体集積回路チップを多層配線基板に搭載してキャ
ップにより気密封止した高速集積回路パッケージに於い
て、 前記多層配線基板の高周波信号が伝搬する配線(1a、
1b、1c)間をインダクタンス成分の小さい接続部(
4a、4b)で接続し、 電源供給用の配線(2a、2b、2c)間をインダクタ
ンス成分の大きい接続部(5a、5b)で接続した ことを特徴とする高速集積回路パッケージ。
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60077549A JPS61239649A (ja) | 1985-04-13 | 1985-04-13 | 高速集積回路パツケ−ジ |
CA000505739A CA1249379A (en) | 1985-04-13 | 1986-04-03 | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
KR1019860002694A KR900007299B1 (ko) | 1985-04-13 | 1986-04-09 | 회로소자 연결용 축적 도전층을 갖는 집적회로장치 |
EP86400782A EP0199635B1 (en) | 1985-04-13 | 1986-04-11 | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
DE8686400782T DE3678023D1 (de) | 1985-04-13 | 1986-04-11 | Integrierte schaltungsanordnung mit gestapelten leiterschichten zum verbinden von schaltungselementen. |
AT86400782T ATE61696T1 (de) | 1985-04-13 | 1986-04-11 | Integrierte schaltungsanordnung mit gestapelten leiterschichten zum verbinden von schaltungselementen. |
US07/214,838 US4827327A (en) | 1985-04-13 | 1988-07-05 | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
SG456/92A SG45692G (en) | 1985-04-13 | 1992-04-24 | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
HK469/92A HK46992A (en) | 1985-04-13 | 1992-06-25 | Integrated circuit device having stacked conductive layers connecting circuit elements therethrough |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP60077549A JPS61239649A (ja) | 1985-04-13 | 1985-04-13 | 高速集積回路パツケ−ジ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS61239649A true JPS61239649A (ja) | 1986-10-24 |
JPH0325082B2 JPH0325082B2 (ja) | 1991-04-05 |
Family
ID=13637092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP60077549A Granted JPS61239649A (ja) | 1985-04-13 | 1985-04-13 | 高速集積回路パツケ−ジ |
Country Status (9)
Country | Link |
---|---|
US (1) | US4827327A (ja) |
EP (1) | EP0199635B1 (ja) |
JP (1) | JPS61239649A (ja) |
KR (1) | KR900007299B1 (ja) |
AT (1) | ATE61696T1 (ja) |
CA (1) | CA1249379A (ja) |
DE (1) | DE3678023D1 (ja) |
HK (1) | HK46992A (ja) |
SG (1) | SG45692G (ja) |
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JPH05501658A (ja) * | 1989-11-28 | 1993-04-02 | レオコーア インコーポレーテッド | 小輪郭カテーテル |
JPH06291520A (ja) * | 1992-04-03 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 高周波多層集積回路 |
JPH06291521A (ja) * | 1992-04-21 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 高周波多層集積回路 |
US5717359A (en) * | 1995-04-14 | 1998-02-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having elongated fixed potential lines to reduce noise on the lines |
JP2010500844A (ja) * | 2006-08-22 | 2010-01-07 | イー.エム.ダブリュ.アンテナ カンパニー リミテッド | 伝送線路 |
JP2010050358A (ja) * | 2008-08-22 | 2010-03-04 | Sharp Corp | 半導体装置 |
CN108447857A (zh) * | 2013-12-20 | 2018-08-24 | 乾坤科技股份有限公司 | 三维空间封装结构及其制造方法 |
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CA1246755A (en) * | 1985-03-30 | 1988-12-13 | Akira Miyauchi | Semiconductor device |
US4945399A (en) * | 1986-09-30 | 1990-07-31 | International Business Machines Corporation | Electronic package with integrated distributed decoupling capacitors |
GB2197540B (en) * | 1986-11-12 | 1991-04-17 | Murata Manufacturing Co | A circuit structure. |
US4922324A (en) * | 1987-01-20 | 1990-05-01 | Kabushiki Kaisha Toshiba | Semiconductor integrated circuit device |
JPH0682945B2 (ja) * | 1987-02-25 | 1994-10-19 | 三菱電機株式会社 | 半導体装置 |
JP2507476B2 (ja) * | 1987-09-28 | 1996-06-12 | 株式会社東芝 | 半導体集積回路装置 |
JPH0756887B2 (ja) * | 1988-04-04 | 1995-06-14 | 株式会社日立製作所 | 半導体パッケージ及びそれを用いたコンピュータ |
US5170245A (en) * | 1988-06-15 | 1992-12-08 | International Business Machines Corp. | Semiconductor device having metallic interconnects formed by grit blasting |
US5122475A (en) * | 1988-09-30 | 1992-06-16 | Harris Corporation | Method of making a high speed, high density semiconductor memory package with chip level repairability |
US5014114A (en) * | 1988-09-30 | 1991-05-07 | Harris Corporation | High speed, high density semiconductor memory package with chip level repairability |
US5099306A (en) * | 1988-11-21 | 1992-03-24 | Honeywell Inc. | Stacked tab leadframe assembly |
US5089878A (en) * | 1989-06-09 | 1992-02-18 | Lee Jaesup N | Low impedance packaging |
US5157477A (en) * | 1990-01-10 | 1992-10-20 | International Business Machines Corporation | Matched impedance vertical conductors in multilevel dielectric laminated wiring |
US5184210A (en) * | 1990-03-20 | 1993-02-02 | Digital Equipment Corporation | Structure for controlling impedance and cross-talk in a printed circuit substrate |
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JP3009788B2 (ja) * | 1991-11-15 | 2000-02-14 | 日本特殊陶業株式会社 | 集積回路用パッケージ |
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US5422615A (en) * | 1992-09-14 | 1995-06-06 | Hitachi, Ltd. | High frequency circuit device |
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JPH08504541A (ja) * | 1992-12-15 | 1996-05-14 | イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー | 電気的相互接続構造 |
US5338970A (en) * | 1993-03-24 | 1994-08-16 | Intergraph Corporation | Multi-layered integrated circuit package with improved high frequency performance |
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US5657206A (en) * | 1994-06-23 | 1997-08-12 | Cubic Memory, Inc. | Conductive epoxy flip-chip package and method |
US5698895A (en) * | 1994-06-23 | 1997-12-16 | Cubic Memory, Inc. | Silicon segment programming method and apparatus |
US6124633A (en) * | 1994-06-23 | 2000-09-26 | Cubic Memory | Vertical interconnect process for silicon segments with thermally conductive epoxy preform |
US6486528B1 (en) | 1994-06-23 | 2002-11-26 | Vertical Circuits, Inc. | Silicon segment programming apparatus and three terminal fuse configuration |
US5891761A (en) * | 1994-06-23 | 1999-04-06 | Cubic Memory, Inc. | Method for forming vertical interconnect process for silicon segments with thermally conductive epoxy preform |
US5675180A (en) * | 1994-06-23 | 1997-10-07 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments |
US6255726B1 (en) | 1994-06-23 | 2001-07-03 | Cubic Memory, Inc. | Vertical interconnect process for silicon segments with dielectric isolation |
US6080596A (en) * | 1994-06-23 | 2000-06-27 | Cubic Memory Inc. | Method for forming vertical interconnect process for silicon segments with dielectric isolation |
US5623160A (en) * | 1995-09-14 | 1997-04-22 | Liberkowski; Janusz B. | Signal-routing or interconnect substrate, structure and apparatus |
US9054094B2 (en) | 1997-04-08 | 2015-06-09 | X2Y Attenuators, Llc | Energy conditioning circuit arrangement for integrated circuit |
US7336468B2 (en) | 1997-04-08 | 2008-02-26 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US7321485B2 (en) | 1997-04-08 | 2008-01-22 | X2Y Attenuators, Llc | Arrangement for energy conditioning |
US6191475B1 (en) * | 1997-11-26 | 2001-02-20 | Intel Corporation | Substrate for reducing electromagnetic interference and enclosure |
US6057600A (en) * | 1997-11-27 | 2000-05-02 | Kyocera Corporation | Structure for mounting a high-frequency package |
US6483406B1 (en) * | 1998-07-31 | 2002-11-19 | Kyocera Corporation | High-frequency module using slot coupling |
JP3339473B2 (ja) * | 1999-08-26 | 2002-10-28 | 日本電気株式会社 | パッケージ基板、該パッケージ基板を備える半導体装置及びそれらの製造方法 |
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US6414396B1 (en) | 2000-01-24 | 2002-07-02 | Amkor Technology, Inc. | Package for stacked integrated circuits |
JP3455498B2 (ja) * | 2000-05-31 | 2003-10-14 | 株式会社東芝 | プリント基板および情報処理装置 |
US7215018B2 (en) | 2004-04-13 | 2007-05-08 | Vertical Circuits, Inc. | Stacked die BGA or LGA component assembly |
US7705432B2 (en) * | 2004-04-13 | 2010-04-27 | Vertical Circuits, Inc. | Three dimensional six surface conformal die coating |
JP2008535207A (ja) | 2005-03-01 | 2008-08-28 | エックストゥーワイ アテニュエイターズ,エルエルシー | 共平面導体を有する調整器 |
DE102005062344B4 (de) * | 2005-12-23 | 2010-08-19 | Infineon Technologies Ag | Halbleiterbauteil für Hochfrequenzanwendungen und Verfahren zur Herstellung eines derartigen Halbleiterbauteils |
US7768098B2 (en) * | 2006-06-23 | 2010-08-03 | Triquint Semiconductor, Inc. | Integrated low inductance interconnect for RF integrated circuits |
US9929087B2 (en) | 2015-11-16 | 2018-03-27 | Taiwan Semiconductor Manufacturing Co., Ltd | Enhancing integrated circuit density with active atomic reservoir |
US10950540B2 (en) | 2015-11-16 | 2021-03-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Enhancing integrated circuit density with active atomic reservoir |
US9818694B2 (en) * | 2015-11-16 | 2017-11-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Active atomic reservoir for enhancing electromigration reliability in integrated circuits |
KR101806198B1 (ko) * | 2016-12-30 | 2017-12-08 | 연세대학교 산학협력단 | 무선 주파수 코일 및 이를 포함하는 의료용 영상 장치 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4416858Y1 (ja) * | 1967-04-03 | 1969-07-21 | ||
JPS5028959A (ja) * | 1973-07-16 | 1975-03-24 |
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FR1598284A (ja) * | 1968-12-04 | 1970-07-06 | ||
US4221047A (en) * | 1979-03-23 | 1980-09-09 | International Business Machines Corporation | Multilayered glass-ceramic substrate for mounting of semiconductor device |
US4320438A (en) * | 1980-05-15 | 1982-03-16 | Cts Corporation | Multi-layer ceramic package |
US4302625A (en) * | 1980-06-30 | 1981-11-24 | International Business Machines Corp. | Multi-layer ceramic substrate |
US4608592A (en) * | 1982-07-09 | 1986-08-26 | Nec Corporation | Semiconductor device provided with a package for a semiconductor element having a plurality of electrodes to be applied with substantially same voltage |
US4498122A (en) * | 1982-12-29 | 1985-02-05 | At&T Bell Laboratories | High-speed, high pin-out LSI chip package |
US4541035A (en) * | 1984-07-30 | 1985-09-10 | General Electric Company | Low loss, multilevel silicon circuit board |
-
1985
- 1985-04-13 JP JP60077549A patent/JPS61239649A/ja active Granted
-
1986
- 1986-04-03 CA CA000505739A patent/CA1249379A/en not_active Expired
- 1986-04-09 KR KR1019860002694A patent/KR900007299B1/ko not_active IP Right Cessation
- 1986-04-11 EP EP86400782A patent/EP0199635B1/en not_active Expired - Lifetime
- 1986-04-11 DE DE8686400782T patent/DE3678023D1/de not_active Expired - Fee Related
- 1986-04-11 AT AT86400782T patent/ATE61696T1/de not_active IP Right Cessation
-
1988
- 1988-07-05 US US07/214,838 patent/US4827327A/en not_active Expired - Fee Related
-
1992
- 1992-04-24 SG SG456/92A patent/SG45692G/en unknown
- 1992-06-25 HK HK469/92A patent/HK46992A/xx unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4416858Y1 (ja) * | 1967-04-03 | 1969-07-21 | ||
JPS5028959A (ja) * | 1973-07-16 | 1975-03-24 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05501658A (ja) * | 1989-11-28 | 1993-04-02 | レオコーア インコーポレーテッド | 小輪郭カテーテル |
JPH06291520A (ja) * | 1992-04-03 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 高周波多層集積回路 |
JPH06291521A (ja) * | 1992-04-21 | 1994-10-18 | Matsushita Electric Ind Co Ltd | 高周波多層集積回路 |
US5717359A (en) * | 1995-04-14 | 1998-02-10 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor integrated circuit having elongated fixed potential lines to reduce noise on the lines |
JP2010500844A (ja) * | 2006-08-22 | 2010-01-07 | イー.エム.ダブリュ.アンテナ カンパニー リミテッド | 伝送線路 |
JP4815535B2 (ja) * | 2006-08-22 | 2011-11-16 | イーエムダブリュ カンパニー リミテッド | 伝送線路 |
JP2010050358A (ja) * | 2008-08-22 | 2010-03-04 | Sharp Corp | 半導体装置 |
CN108447857A (zh) * | 2013-12-20 | 2018-08-24 | 乾坤科技股份有限公司 | 三维空间封装结构及其制造方法 |
CN108447857B (zh) * | 2013-12-20 | 2021-09-07 | 乾坤科技股份有限公司 | 三维空间封装结构及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
CA1249379A (en) | 1989-01-24 |
SG45692G (en) | 1992-06-12 |
KR860008600A (ko) | 1986-11-17 |
EP0199635B1 (en) | 1991-03-13 |
EP0199635A3 (en) | 1987-11-19 |
HK46992A (en) | 1992-07-03 |
JPH0325082B2 (ja) | 1991-04-05 |
US4827327A (en) | 1989-05-02 |
ATE61696T1 (de) | 1991-03-15 |
KR900007299B1 (ko) | 1990-10-08 |
EP0199635A2 (en) | 1986-10-29 |
DE3678023D1 (de) | 1991-04-18 |
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