DE69317940D1 - Halbleiterbauelement mit Kondensator - Google Patents

Halbleiterbauelement mit Kondensator

Info

Publication number
DE69317940D1
DE69317940D1 DE69317940T DE69317940T DE69317940D1 DE 69317940 D1 DE69317940 D1 DE 69317940D1 DE 69317940 T DE69317940 T DE 69317940T DE 69317940 T DE69317940 T DE 69317940T DE 69317940 D1 DE69317940 D1 DE 69317940D1
Authority
DE
Germany
Prior art keywords
capacitor
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317940T
Other languages
English (en)
Other versions
DE69317940T2 (de
Inventor
Eiji Fujii
Yasuhiro Shimada
Yasuhiro Uemoto
Shinitirou Hayashi
Tooru Nasu
Koichi Arita
Atsuo Inoue
Akihiro Matsuda
Masaki Kibe
Tatsuo Ootsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15325692A external-priority patent/JP3226329B2/ja
Priority claimed from JP17804492A external-priority patent/JP2998870B2/ja
Priority claimed from JP26454792A external-priority patent/JPH06120072A/ja
Priority claimed from JP26454692A external-priority patent/JP3282234B2/ja
Priority claimed from JP27838192A external-priority patent/JP3376611B2/ja
Priority claimed from JP28855192A external-priority patent/JP3255731B2/ja
Priority claimed from JP29106692A external-priority patent/JP2912776B2/ja
Priority claimed from JP29106592A external-priority patent/JPH06140567A/ja
Priority claimed from JP4311576A external-priority patent/JPH06157033A/ja
Priority claimed from JP02393393A external-priority patent/JP3265677B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE69317940D1 publication Critical patent/DE69317940D1/de
Publication of DE69317940T2 publication Critical patent/DE69317940T2/de
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/811—Combinations of field-effect devices and one or more diodes, capacitors or resistors
    • H10D84/813—Combinations of field-effect devices and capacitor only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69317940T 1992-06-12 1993-06-14 Halbleiterbauelement mit Kondensator Expired - Fee Related DE69317940T2 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP15325692A JP3226329B2 (ja) 1992-06-12 1992-06-12 容量装置およびその製造方法
JP17804492A JP2998870B2 (ja) 1992-07-06 1992-07-06 薄膜形成方法および薄膜成長装置
JP26454692A JP3282234B2 (ja) 1992-10-02 1992-10-02 半導体装置
JP26454792A JPH06120072A (ja) 1992-10-02 1992-10-02 容量素子
JP27838192A JP3376611B2 (ja) 1992-10-16 1992-10-16 半導体装置の製造方法
JP28855192A JP3255731B2 (ja) 1992-10-27 1992-10-27 容量素子の製造方法
JP29106692A JP2912776B2 (ja) 1992-10-29 1992-10-29 半導体装置およびその製造方法
JP29106592A JPH06140567A (ja) 1992-10-29 1992-10-29 半導体装置の製造方法
JP4311576A JPH06157033A (ja) 1992-11-20 1992-11-20 金属酸化物薄膜の形成方法
JP02393393A JP3265677B2 (ja) 1993-02-12 1993-02-12 強誘電体薄膜の形成方法

Publications (2)

Publication Number Publication Date
DE69317940D1 true DE69317940D1 (de) 1998-05-20
DE69317940T2 DE69317940T2 (de) 1998-11-26

Family

ID=27579768

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69317940T Expired - Fee Related DE69317940T2 (de) 1992-06-12 1993-06-14 Halbleiterbauelement mit Kondensator
DE69333864T Expired - Fee Related DE69333864T2 (de) 1992-06-12 1993-06-14 Herstellungsverfahren für Halbleiterbauelement mit Kondensator

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69333864T Expired - Fee Related DE69333864T2 (de) 1992-06-12 1993-06-14 Herstellungsverfahren für Halbleiterbauelement mit Kondensator

Country Status (3)

Country Link
US (3) US5717233A (de)
EP (2) EP0789395B1 (de)
DE (2) DE69317940T2 (de)

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US5972788A (en) 1996-05-22 1999-10-26 International Business Machines Corporation Method of making flexible interconnections with dual-metal-dual-stud structure
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TW386289B (en) * 1997-07-03 2000-04-01 Matsushita Electronics Corp Capacitance element and manufacturing thereof
EP0893832A3 (de) 1997-07-24 1999-11-03 Matsushita Electronics Corporation Halbleiteranordnung, die eine Kapazität enthält und Verfahren zur Herstellung
US6509601B1 (en) * 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
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US20030150821A1 (en) * 1999-07-16 2003-08-14 Bates Mark C. Emboli filtration system and methods of use
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US6451117B1 (en) * 2000-08-11 2002-09-17 Ford Global Tech., Inc. Paint mask and a method for utilizing the same
US6750113B2 (en) * 2001-01-17 2004-06-15 International Business Machines Corporation Metal-insulator-metal capacitor in copper
US6717193B2 (en) * 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
JP4040284B2 (ja) * 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP3986859B2 (ja) * 2002-03-25 2007-10-03 富士通株式会社 薄膜キャパシタ及びその製造方法
JP4713286B2 (ja) 2004-12-03 2011-06-29 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
JP5234521B2 (ja) * 2009-08-21 2013-07-10 Ｔｄｋ株式会社 電子部品及びその製造方法
JP5672678B2 (ja) * 2009-08-21 2015-02-18 Tdk株式会社 電子部品及びその製造方法
WO2013070438A1 (en) * 2011-11-08 2013-05-16 Applied Materials, Inc. Precursor distribution features for improved deposition uniformity

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US3888207A (en) * 1972-07-24 1975-06-10 Erwin Stutz Device for coating objects with pulverized or granular particles or flakes or fibres
US3913523A (en) * 1972-08-07 1975-10-21 Ransburg Electro Coating Corp Powder coating apparatus
US3991710A (en) * 1973-06-01 1976-11-16 Energy Innovations, Inc. Electrogasdynamic production line coating system
US4170193A (en) * 1976-04-16 1979-10-09 Ball Corporation Apparatus for applying lubricating materials to metallic substrates
JPS5780828A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device
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US5216572A (en) * 1992-03-19 1993-06-01 Ramtron International Corporation Structure and method for increasing the dielectric constant of integrated ferroelectric capacitors
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US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
JP3319869B2 (ja) * 1993-06-24 2002-09-03 三菱電機株式会社 半導体記憶装置およびその製造方法
DE69433245T2 (de) * 1993-08-05 2004-07-22 Matsushita Electric Industrial Co., Ltd., Kadoma Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
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JP3460347B2 (ja) * 1994-03-30 2003-10-27 松下電器産業株式会社 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP0574275A1 (de) 1993-12-15
EP0789395A3 (de) 1998-05-13
DE69317940T2 (de) 1998-11-26
DE69333864D1 (de) 2005-10-13
US6080617A (en) 2000-06-27
DE69333864T2 (de) 2006-06-29
EP0574275B1 (de) 1998-04-15
EP0789395B1 (de) 2005-09-07
US5717233A (en) 1998-02-10
US6126752A (en) 2000-10-03
EP0789395A2 (de) 1997-08-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee