DE69317940T2 - Halbleiterbauelement mit Kondensator - Google Patents

Halbleiterbauelement mit Kondensator

Info

Publication number
DE69317940T2
DE69317940T2 DE69317940T DE69317940T DE69317940T2 DE 69317940 T2 DE69317940 T2 DE 69317940T2 DE 69317940 T DE69317940 T DE 69317940T DE 69317940 T DE69317940 T DE 69317940T DE 69317940 T2 DE69317940 T2 DE 69317940T2
Authority
DE
Germany
Prior art keywords
capacitor
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69317940T
Other languages
English (en)
Other versions
DE69317940D1 (de
Inventor
Eiji Fujii
Yasuhiro Shimada
Yasuhiro Uemoto
Shinitirou Hayashi
Tooru Nasu
Koichi Arita
Atsuo Inoue
Akihiro Matsuda
Masaki Kibe
Tatsuo Ootsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP15325692A external-priority patent/JP3226329B2/ja
Priority claimed from JP17804492A external-priority patent/JP2998870B2/ja
Priority claimed from JP26454792A external-priority patent/JPH06120072A/ja
Priority claimed from JP26454692A external-priority patent/JP3282234B2/ja
Priority claimed from JP27838192A external-priority patent/JP3376611B2/ja
Priority claimed from JP28855192A external-priority patent/JP3255731B2/ja
Priority claimed from JP29106592A external-priority patent/JPH06140567A/ja
Priority claimed from JP29106692A external-priority patent/JP2912776B2/ja
Priority claimed from JP4311576A external-priority patent/JPH06157033A/ja
Priority claimed from JP02393393A external-priority patent/JP3265677B2/ja
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Publication of DE69317940D1 publication Critical patent/DE69317940D1/de
Application granted granted Critical
Publication of DE69317940T2 publication Critical patent/DE69317940T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H10B53/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
DE69317940T 1992-06-12 1993-06-14 Halbleiterbauelement mit Kondensator Expired - Fee Related DE69317940T2 (de)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP15325692A JP3226329B2 (ja) 1992-06-12 1992-06-12 容量装置およびその製造方法
JP17804492A JP2998870B2 (ja) 1992-07-06 1992-07-06 薄膜形成方法および薄膜成長装置
JP26454692A JP3282234B2 (ja) 1992-10-02 1992-10-02 半導体装置
JP26454792A JPH06120072A (ja) 1992-10-02 1992-10-02 容量素子
JP27838192A JP3376611B2 (ja) 1992-10-16 1992-10-16 半導体装置の製造方法
JP28855192A JP3255731B2 (ja) 1992-10-27 1992-10-27 容量素子の製造方法
JP29106592A JPH06140567A (ja) 1992-10-29 1992-10-29 半導体装置の製造方法
JP29106692A JP2912776B2 (ja) 1992-10-29 1992-10-29 半導体装置およびその製造方法
JP4311576A JPH06157033A (ja) 1992-11-20 1992-11-20 金属酸化物薄膜の形成方法
JP02393393A JP3265677B2 (ja) 1993-02-12 1993-02-12 強誘電体薄膜の形成方法

Publications (2)

Publication Number Publication Date
DE69317940D1 DE69317940D1 (de) 1998-05-20
DE69317940T2 true DE69317940T2 (de) 1998-11-26

Family

ID=27579768

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69333864T Expired - Fee Related DE69333864T2 (de) 1992-06-12 1993-06-14 Herstellungsverfahren für Halbleiterbauelement mit Kondensator
DE69317940T Expired - Fee Related DE69317940T2 (de) 1992-06-12 1993-06-14 Halbleiterbauelement mit Kondensator

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69333864T Expired - Fee Related DE69333864T2 (de) 1992-06-12 1993-06-14 Herstellungsverfahren für Halbleiterbauelement mit Kondensator

Country Status (3)

Country Link
US (3) US5717233A (de)
EP (2) EP0574275B1 (de)
DE (2) DE69333864T2 (de)

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TW386289B (en) * 1997-07-03 2000-04-01 Matsushita Electronics Corp Capacitance element and manufacturing thereof
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US6509601B1 (en) * 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
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US6259133B1 (en) 1999-02-11 2001-07-10 Advanced Micro Devices, Inc. Method for forming an integrated circuit memory cell and product thereof
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US20030150821A1 (en) * 1999-07-16 2003-08-14 Bates Mark C. Emboli filtration system and methods of use
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US6451117B1 (en) * 2000-08-11 2002-09-17 Ford Global Tech., Inc. Paint mask and a method for utilizing the same
US6750113B2 (en) * 2001-01-17 2004-06-15 International Business Machines Corporation Metal-insulator-metal capacitor in copper
US6717193B2 (en) * 2001-10-09 2004-04-06 Koninklijke Philips Electronics N.V. Metal-insulator-metal (MIM) capacitor structure and methods of fabricating same
JP4040284B2 (ja) * 2001-11-08 2008-01-30 住友大阪セメント株式会社 プラズマ発生用電極内蔵型サセプタ及びその製造方法
JP3986859B2 (ja) * 2002-03-25 2007-10-03 富士通株式会社 薄膜キャパシタ及びその製造方法
JP4713286B2 (ja) 2004-12-03 2011-06-29 富士通セミコンダクター株式会社 半導体装置及びその製造方法
WO2008010028A1 (en) * 2006-06-15 2008-01-24 Freescale Semiconductor, Inc. Mim capacitor integration
JP5672678B2 (ja) * 2009-08-21 2015-02-18 Tdk株式会社 電子部品及びその製造方法
JP5234521B2 (ja) * 2009-08-21 2013-07-10 Ｔｄｋ株式会社 電子部品及びその製造方法
KR20140092892A (ko) * 2011-11-08 2014-07-24 어플라이드 머티어리얼스, 인코포레이티드 개선된 증착 균일성을 위한 전구체 분배 피처들

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Also Published As

Publication number Publication date
US6080617A (en) 2000-06-27
EP0789395B1 (de) 2005-09-07
US5717233A (en) 1998-02-10
DE69333864T2 (de) 2006-06-29
DE69333864D1 (de) 2005-10-13
EP0789395A3 (de) 1998-05-13
EP0574275A1 (de) 1993-12-15
EP0574275B1 (de) 1998-04-15
US6126752A (en) 2000-10-03
EP0789395A2 (de) 1997-08-13
DE69317940D1 (de) 1998-05-20

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8327 Change in the person/name/address of the patent owner

Owner name: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD., KADOMA,

8327 Change in the person/name/address of the patent owner

Owner name: PANASONIC CORP., KADOMA, OSAKA, JP

8339 Ceased/non-payment of the annual fee