DE69325849T2 - Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat - Google Patents

Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat

Info

Publication number
DE69325849T2
DE69325849T2 DE69325849T DE69325849T DE69325849T2 DE 69325849 T2 DE69325849 T2 DE 69325849T2 DE 69325849 T DE69325849 T DE 69325849T DE 69325849 T DE69325849 T DE 69325849T DE 69325849 T2 DE69325849 T2 DE 69325849T2
Authority
DE
Germany
Prior art keywords
insulating substrate
metal conductors
making metal
making
conductors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69325849T
Other languages
English (en)
Other versions
DE69325849D1 (de
Inventor
Tomohiko Yamamoto
Hiroshi Morimoto
Yasunori Shimada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69325849D1 publication Critical patent/DE69325849D1/de
Application granted granted Critical
Publication of DE69325849T2 publication Critical patent/DE69325849T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/314—Inorganic layers
    • H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
    • H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
    • H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02244—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of a metallic layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
DE69325849T 1992-05-12 1993-05-12 Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat Expired - Fee Related DE69325849T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11928592 1992-05-12

Publications (2)

Publication Number Publication Date
DE69325849D1 DE69325849D1 (de) 1999-09-09
DE69325849T2 true DE69325849T2 (de) 2000-01-05

Family

ID=14757614

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69325849T Expired - Fee Related DE69325849T2 (de) 1992-05-12 1993-05-12 Verfahren zum Herstellen von Metalleiter auf einem isolierenden Substrat

Country Status (6)

Country Link
US (1) US5518936A (de)
EP (1) EP0570205B1 (de)
JP (1) JP2905032B2 (de)
KR (1) KR970005000B1 (de)
DE (1) DE69325849T2 (de)
TW (1) TW221523B (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0582387B1 (de) * 1992-08-05 1999-05-26 Sharp Kabushiki Kaisha Metallische Leiterplatte und Herstellungsverfahren dafür
US5528082A (en) * 1994-04-28 1996-06-18 Xerox Corporation Thin-film structure with tapered feature
US6251758B1 (en) * 1994-11-14 2001-06-26 Applied Materials, Inc. Construction of a film on a semiconductor wafer
US5610084A (en) * 1995-04-21 1997-03-11 U.S. Phillips Corporation Method of manufacturing an antifuse utilizing nitrogen implantation
US5837592A (en) * 1995-12-07 1998-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Method for stabilizing polysilicon resistors
KR100205301B1 (ko) * 1995-12-26 1999-07-01 구본준 금속배선구조 및 형성방법
JP2865039B2 (ja) * 1995-12-26 1999-03-08 日本電気株式会社 薄膜トランジスタ基板の製造方法
JPH10163501A (ja) * 1996-11-29 1998-06-19 Semiconductor Energy Lab Co Ltd 絶縁ゲイト型トランジスタ
US6501094B1 (en) * 1997-06-11 2002-12-31 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising a bottom gate type thin film transistor
JP3717634B2 (ja) * 1997-06-17 2005-11-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6166428A (en) * 1997-08-25 2000-12-26 Advanced Micro Devices, Inc. Formation of a barrier layer for tungsten damascene interconnects by nitrogen implantation of amorphous silicon or polysilicon
US7253109B2 (en) 1997-11-26 2007-08-07 Applied Materials, Inc. Method of depositing a tantalum nitride/tantalum diffusion barrier layer system
US6887353B1 (en) 1997-12-19 2005-05-03 Applied Materials, Inc. Tailored barrier layer which provides improved copper interconnect electromigration resistance
US6396147B1 (en) 1998-05-16 2002-05-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device with metal-oxide conductors
KR20000043666A (ko) * 1998-12-29 2000-07-15 신현준 전로용 슬래그 코팅재
JP3916334B2 (ja) * 1999-01-13 2007-05-16 シャープ株式会社 薄膜トランジスタ
JP2000275663A (ja) * 1999-03-26 2000-10-06 Hitachi Ltd 液晶表示装置とその製造方法
US6613671B1 (en) * 2000-03-03 2003-09-02 Micron Technology, Inc. Conductive connection forming methods, oxidation reducing methods, and integrated circuits formed thereby
JP4831885B2 (ja) 2001-04-27 2011-12-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6955835B2 (en) * 2003-04-30 2005-10-18 Hewlett-Packard Development Company, L.P. Method for forming compressive alpha-tantalum on substrates and devices including the same
US20060084217A1 (en) * 2004-10-20 2006-04-20 Freescale Semiconductor, Inc. Plasma impurification of a metal gate in a semiconductor fabrication process
TW200913269A (en) * 2007-09-03 2009-03-16 Chunghwa Picture Tubes Ltd Thin film transistor and manufacturing method thereof
US9391152B1 (en) * 2015-01-20 2016-07-12 International Business Machines Corporation Implantation formed metal-insulator-semiconductor (MIS) contacts

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5197385A (en) * 1975-02-21 1976-08-26 Handotaisochino seizohoho
EP0058548B1 (de) * 1981-02-16 1986-08-06 Fujitsu Limited Verfahren zur Herstellung einer Halbleitervorrichtung des Typs MOSFET
DE3783405T2 (de) * 1986-08-19 1993-08-05 Fujitsu Ltd Halbleiteranordnung mit einer duennschicht-verdrahtung und verfahren zum herstellen derselben.
US5254870A (en) * 1988-05-07 1993-10-19 Seiko Epson Corporation Static random access memory having memory cells with electric field shielding for cell load resistances
JPH02106723A (ja) * 1988-10-17 1990-04-18 Toppan Printing Co Ltd 薄膜トランジスタアレイ
US5236866A (en) * 1988-10-25 1993-08-17 Mitsubishi Denki Kabushiki Kaisha Metal interconnection layer having reduced hillock formation in semi-conductor device and manufacturing method therefor
JP2795883B2 (ja) * 1989-03-24 1998-09-10 シチズン時計株式会社 液晶表示装置における非線形素子
JPH0770725B2 (ja) * 1989-03-29 1995-07-31 シャープ株式会社 半導体装置の製造方法
JPH0351823A (ja) * 1989-07-20 1991-03-06 Citizen Watch Co Ltd Ｍｉｍ型非線形スイッチング素子の製造方法
JPH03248568A (ja) * 1990-02-27 1991-11-06 Fuji Xerox Co Ltd 薄膜半導体装置
US5126283A (en) * 1990-05-21 1992-06-30 Motorola, Inc. Process for the selective encapsulation of an electrically conductive structure in a semiconductor device
US5250459A (en) * 1992-04-14 1993-10-05 Micron Technology, Inc. Electrically programmable low resistive antifuse element

Also Published As

Publication number Publication date
JPH0629534A (ja) 1994-02-04
TW221523B (de) 1994-03-01
KR970005000B1 (ko) 1997-04-10
EP0570205A1 (de) 1993-11-18
US5518936A (en) 1996-05-21
DE69325849D1 (de) 1999-09-09
EP0570205B1 (de) 1999-08-04
JP2905032B2 (ja) 1999-06-14
KR940006432A (ko) 1994-03-23

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee