DE69427556T2 - Drain/Source-Kontakt für Dünnfilmtransistor - Google Patents

Drain/Source-Kontakt für Dünnfilmtransistor

Info

Publication number
DE69427556T2
DE69427556T2 DE69427556T DE69427556T DE69427556T2 DE 69427556 T2 DE69427556 T2 DE 69427556T2 DE 69427556 T DE69427556 T DE 69427556T DE 69427556 T DE69427556 T DE 69427556T DE 69427556 T2 DE69427556 T2 DE 69427556T2
Authority
DE
Germany
Prior art keywords
drain
thin film
film transistor
source contact
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69427556T
Other languages
English (en)
Other versions
DE69427556D1 (de
Inventor
Katsuhiro Kawai
Mikio Katayama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP05127838A external-priority patent/JP3129878B2/ja
Priority claimed from JP10484293A external-priority patent/JPH06314789A/ja
Application filed by Sharp Corp filed Critical Sharp Corp
Publication of DE69427556D1 publication Critical patent/DE69427556D1/de
Application granted granted Critical
Publication of DE69427556T2 publication Critical patent/DE69427556T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41733—Source or drain electrodes for field effect devices for thin film transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78651—Silicon transistors
    • H01L29/7866—Non-monocrystalline silicon transistors
    • H01L29/78663—Amorphous silicon transistors
    • H01L29/78669—Amorphous silicon transistors with inverted-type structure, e.g. with bottom gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thin Film Transistor (AREA)
DE69427556T 1993-04-30 1994-04-29 Drain/Source-Kontakt für Dünnfilmtransistor Expired - Fee Related DE69427556T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP05127838A JP3129878B2 (ja) 1993-04-30 1993-04-30 薄膜トランジスタ
JP10484293A JPH06314789A (ja) 1993-04-30 1993-04-30 薄膜トランジスタ

Publications (2)

Publication Number Publication Date
DE69427556D1 DE69427556D1 (de) 2001-08-02
DE69427556T2 true DE69427556T2 (de) 2002-04-11

Family

ID=26445219

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69427556T Expired - Fee Related DE69427556T2 (de) 1993-04-30 1994-04-29 Drain/Source-Kontakt für Dünnfilmtransistor

Country Status (4)

Country Link
US (1) US5473168A (de)
EP (1) EP0622855B1 (de)
KR (1) KR0159318B1 (de)
DE (1) DE69427556T2 (de)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3255942B2 (ja) 1991-06-19 2002-02-12 株式会社半導体エネルギー研究所 逆スタガ薄膜トランジスタの作製方法
US6709907B1 (en) * 1992-02-25 2004-03-23 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating a thin film transistor
JP3512849B2 (ja) * 1993-04-23 2004-03-31 株式会社東芝 薄膜トランジスタおよびそれを用いた表示装置
US5796116A (en) 1994-07-27 1998-08-18 Sharp Kabushiki Kaisha Thin-film semiconductor device including a semiconductor film with high field-effect mobility
US5885884A (en) * 1995-09-29 1999-03-23 Intel Corporation Process for fabricating a microcrystalline silicon structure
KR100198556B1 (ko) * 1995-11-22 1999-07-01 구자홍 박막트랜지스터의 구조 및 제조방법
US5717223A (en) * 1995-12-22 1998-02-10 Xerox Corporation Array with amorphous silicon TFTs in which channel leads overlap insulating region no more than maximum overlap
US5733804A (en) * 1995-12-22 1998-03-31 Xerox Corporation Fabricating fully self-aligned amorphous silicon device
JPH09203908A (ja) * 1996-01-25 1997-08-05 Furontetsuku:Kk 液晶表示装置用薄膜トランジスタおよび液晶表示装置
JP3516424B2 (ja) * 1996-03-10 2004-04-05 株式会社半導体エネルギー研究所 薄膜半導体装置
US6746905B1 (en) 1996-06-20 2004-06-08 Kabushiki Kaisha Toshiba Thin film transistor and manufacturing process therefor
KR100196336B1 (en) * 1996-07-27 1999-06-15 Lg Electronics Inc Method of manufacturing thin film transistor
US5814530A (en) * 1996-09-27 1998-09-29 Xerox Corporation Producing a sensor with doped microcrystalline silicon channel leads
US5959312A (en) * 1996-09-27 1999-09-28 Xerox Corporation Sensor with doped microcrystalline silicon channel leads with bubble formation protection means
US6288099B1 (en) 1998-12-04 2001-09-11 American Home Products Corporation Substituted benzofuranoindoles and indenoindoles as novel potassium channel openers
GB9927287D0 (en) 1999-11-19 2000-01-12 Koninkl Philips Electronics Nv Top gate thin film transistor and method of producing the same
JP3701832B2 (ja) * 2000-02-04 2005-10-05 インターナショナル・ビジネス・マシーンズ・コーポレーション 薄膜トランジスタ、液晶表示パネル、および薄膜トランジスタの製造方法
KR100606963B1 (ko) * 2000-12-27 2006-08-01 엘지.필립스 엘시디 주식회사 액정 디스플레이 패널 및 그의 제조방법
KR100379684B1 (ko) * 2001-04-20 2003-04-10 엘지.필립스 엘시디 주식회사 박막 트랜지스터 액정표시소자 제조방법
US20050048706A1 (en) * 2003-08-27 2005-03-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI279916B (en) * 2005-01-31 2007-04-21 Au Optronics Corp TFT array substrate of a LCD, LCD panel and method of fabricating the same
US8102339B2 (en) * 2005-04-05 2012-01-24 Sharp Kabushiki Kaisha Liquid crystal display device, driving circuit for the same and driving method for the same
US7719008B2 (en) * 2006-02-03 2010-05-18 Samsung Electronics Co., Thin film transistor substrate and method of manufacturing the same and mask for manufacturing thin film transistor substrate
US7952099B2 (en) * 2006-04-21 2011-05-31 Beijing Boe Optoelectronics Technology Co., Ltd. Thin film transistor liquid crystal display array substrate
TWI378562B (en) * 2008-01-23 2012-12-01 Ind Tech Res Inst Microcrystalline silicon thin film transistor and method for manufactruing the same
US7786485B2 (en) * 2008-02-29 2010-08-31 Semicondutor Energy Laboratory Co., Ltd. Thin-film transistor and display device
US7968880B2 (en) 2008-03-01 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device
US7821012B2 (en) * 2008-03-18 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor
JP5411528B2 (ja) * 2008-03-18 2014-02-12 株式会社半導体エネルギー研究所 薄膜トランジスタ及び表示装置
US8039842B2 (en) * 2008-05-22 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and display device including thin film transistor
TWI637444B (zh) 2008-08-08 2018-10-01 半導體能源研究所股份有限公司 半導體裝置的製造方法
TWI485851B (zh) 2009-03-30 2015-05-21 Semiconductor Energy Lab 半導體裝置及其製造方法
JP2011187506A (ja) * 2010-03-04 2011-09-22 Sony Corp 薄膜トランジスタおよびその製造方法、並びに表示装置
TWI474487B (zh) * 2010-11-30 2015-02-21 Au Optronics Corp 氧化物半導體薄膜電晶體結構與其製作方法
TWI605590B (zh) 2011-09-29 2017-11-11 半導體能源研究所股份有限公司 半導體裝置及其製造方法
CN202487578U (zh) 2012-03-27 2012-10-10 京东方科技集团股份有限公司 薄膜晶体管、阵列基板及显示装置
JP6376788B2 (ja) 2013-03-26 2018-08-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
KR102295477B1 (ko) * 2014-02-17 2021-08-30 삼성디스플레이 주식회사 박막 트랜지스터 표시판

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6377159A (ja) * 1986-09-19 1988-04-07 Fujitsu Ltd 薄膜トランジスタの製造方法
JPS6393156A (ja) * 1986-10-08 1988-04-23 Seiko Epson Corp 薄膜トランジスタ
JPS63119577A (ja) * 1986-11-07 1988-05-24 Toshiba Corp 薄膜トランジスタ
JPH01236655A (ja) * 1988-03-17 1989-09-21 Matsushita Electric Ind Co Ltd 薄膜電界効果トランジスタとその製造方法
EP0341003B1 (de) * 1988-04-30 1994-08-31 Sharp Kabushiki Kaisha Dünnfilm-Halbleitervorrichtung und damit hergestellte Flüssigkristallanzeige
US5122849A (en) * 1988-07-13 1992-06-16 Seikosha Co., Ltd. Silicon thin film transistor
JP2675587B2 (ja) * 1988-08-09 1997-11-12 シャープ株式会社 マトリックス型液晶表示パネル
JPH02260460A (ja) * 1989-03-31 1990-10-23 Casio Comput Co Ltd 薄膜トランジスタ
US5109260A (en) * 1989-07-10 1992-04-28 Seikosha Co., Ltd. Silicon thin film transistor and method for producing the same
US5270567A (en) * 1989-09-06 1993-12-14 Casio Computer Co., Ltd. Thin film transistors without capacitances between electrodes thereof
JPH0393274A (ja) * 1989-09-06 1991-04-18 Casio Comput Co Ltd 薄膜トランジスタ
JPH03185840A (ja) * 1989-12-15 1991-08-13 Casio Comput Co Ltd 薄膜トランジスタ
EP0473988A1 (de) * 1990-08-29 1992-03-11 International Business Machines Corporation Verfahren zur Herstellung eines Dünnfilmtransistors mit amorpher/polykristalliner Halbleiterkanalzone
JPH0541391A (ja) * 1991-08-06 1993-02-19 Fujitsu Ltd 薄膜トランジスタの製造方法

Also Published As

Publication number Publication date
EP0622855A2 (de) 1994-11-02
KR0159318B1 (ko) 1998-12-01
EP0622855A3 (de) 1996-04-17
EP0622855B1 (de) 2001-06-27
DE69427556D1 (de) 2001-08-02
US5473168A (en) 1995-12-05

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee