DE69634745D1 - Dünnfilmtransistor vom Silizium-auf-Isolator-Typ - Google Patents

Dünnfilmtransistor vom Silizium-auf-Isolator-Typ

Info

Publication number
DE69634745D1
DE69634745D1 DE69634745T DE69634745T DE69634745D1 DE 69634745 D1 DE69634745 D1 DE 69634745D1 DE 69634745 T DE69634745 T DE 69634745T DE 69634745 T DE69634745 T DE 69634745T DE 69634745 D1 DE69634745 D1 DE 69634745D1
Authority
DE
Germany
Prior art keywords
silicon
thin film
film transistor
type thin
insulator type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69634745T
Other languages
English (en)
Other versions
DE69634745T2 (de
Inventor
Yuji Suzuki
Hitomichi Takano
Masahiko Suzumura
Yoshiki Hayasaki
Takashi Kishida
Yoshifumi Shirai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Electric Works Co Ltd
Original Assignee
Matsushita Electric Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP8012172A external-priority patent/JPH09205210A/ja
Priority claimed from JP01217396A external-priority patent/JP3210853B2/ja
Application filed by Matsushita Electric Works Ltd filed Critical Matsushita Electric Works Ltd
Publication of DE69634745D1 publication Critical patent/DE69634745D1/de
Application granted granted Critical
Publication of DE69634745T2 publication Critical patent/DE69634745T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H01L29/7824—Lateral DMOS transistors, i.e. LDMOS transistors with a substrate comprising an insulating layer, e.g. SOI-LDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78606—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device
    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
    • H01L29/78624—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile the source and the drain regions being asymmetrical
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
    • H01L29/0878—Impurity concentration or distribution
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
DE69634745T 1996-01-26 1996-10-16 Dünnfilmtransistor vom Silizium-auf-Isolator-Typ Expired - Lifetime DE69634745T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1217396 1996-01-26
JP8012172A JPH09205210A (ja) 1996-01-26 1996-01-26 誘電体分離型半導体装置
JP01217396A JP3210853B2 (ja) 1996-01-26 1996-01-26 半導体装置
JP1217296 1996-01-26

Publications (2)

Publication Number Publication Date
DE69634745D1 true DE69634745D1 (de) 2005-06-23
DE69634745T2 DE69634745T2 (de) 2006-02-23

Family

ID=26347747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69634745T Expired - Lifetime DE69634745T2 (de) 1996-01-26 1996-10-16 Dünnfilmtransistor vom Silizium-auf-Isolator-Typ

Country Status (7)

Country Link
US (1) US5780900A (de)
EP (1) EP0786818B1 (de)
KR (1) KR100249290B1 (de)
CN (1) CN1081833C (de)
DE (1) DE69634745T2 (de)
HK (1) HK1000853A1 (de)
TW (1) TW360982B (de)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3527034B2 (ja) * 1996-09-20 2004-05-17 株式会社半導体エネルギー研究所 半導体装置
SG67518A1 (en) * 1997-06-30 1999-09-21 Matsushita Electric Works Ltd Solid-state relay
US6346451B1 (en) * 1997-12-24 2002-02-12 Philips Electronics North America Corporation Laterial thin-film silicon-on-insulator (SOI) device having a gate electrode and a field plate electrode
US6310378B1 (en) 1997-12-24 2001-10-30 Philips Electronics North American Corporation High voltage thin film transistor with improved on-state characteristics and method for making same
KR100257765B1 (ko) * 1997-12-30 2000-06-01 김영환 기억소자 및 그 제조 방법
JPH11297941A (ja) * 1998-04-09 1999-10-29 Nec Corp 半導体装置
US5969387A (en) * 1998-06-19 1999-10-19 Philips Electronics North America Corporation Lateral thin-film SOI devices with graded top oxide and graded drift region
US6232636B1 (en) * 1998-11-25 2001-05-15 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) device having multiple doping profile slopes in the drift region
US6127703A (en) * 1999-08-31 2000-10-03 Philips Electronics North America Corporation Lateral thin-film silicon-on-insulator (SOI) PMOS device having a drain extension region
US6221737B1 (en) * 1999-09-30 2001-04-24 Philips Electronics North America Corporation Method of making semiconductor devices with graded top oxide and graded drift region
US6369408B1 (en) * 1999-10-06 2002-04-09 Agere Systems Guardian Corp. GaAs MOSFET having low capacitance and on-resistance and method of manufacturing the same
US6483147B1 (en) 1999-10-25 2002-11-19 Advanced Micro Devices, Inc. Through wafer backside contact to improve SOI heat dissipation
US6166411A (en) * 1999-10-25 2000-12-26 Advanced Micro Devices, Inc. Heat removal from SOI devices by using metal substrates
US6191453B1 (en) * 1999-12-13 2001-02-20 Philips Electronics North America Corporation Lateral insulated-gate bipolar transistor (LIGBT) device in silicon-on-insulator (SOI) technology
TW564557B (en) * 1999-12-22 2003-12-01 Matsushita Electric Works Ltd Semiconductor device and process for producing the same
US6552395B1 (en) 2000-01-03 2003-04-22 Advanced Micro Devices, Inc. Higher thermal conductivity glass for SOI heat removal
US6613643B1 (en) 2000-01-28 2003-09-02 Advanced Micro Devices, Inc. Structure, and a method of realizing, for efficient heat removal on SOI
US6847081B2 (en) * 2001-12-10 2005-01-25 Koninklijke Philips Electronics N.V. Dual gate oxide high-voltage semiconductor device
KR100489802B1 (ko) * 2002-12-18 2005-05-16 한국전자통신연구원 고전압 및 저전압 소자의 구조와 그 제조 방법
US7501669B2 (en) 2003-09-09 2009-03-10 Cree, Inc. Wide bandgap transistor devices with field plates
DE102004005948B4 (de) * 2004-02-02 2009-04-02 Atmel Germany Gmbh MOS-Transistor und Verfahren zur Herstellung einer MOS-Transistorstruktur
CN100421255C (zh) * 2004-04-28 2008-09-24 台湾积体电路制造股份有限公司 完全耗尽型soi多临界电压应用
US7550783B2 (en) * 2004-05-11 2009-06-23 Cree, Inc. Wide bandgap HEMTs with source connected field plates
US7573078B2 (en) * 2004-05-11 2009-08-11 Cree, Inc. Wide bandgap transistors with multiple field plates
US9773877B2 (en) * 2004-05-13 2017-09-26 Cree, Inc. Wide bandgap field effect transistors with source connected field plates
US7829400B2 (en) * 2005-01-12 2010-11-09 Sharp Kabushiki Kaisha Semiconductor device fabrication method and semiconductor device
US7217604B2 (en) * 2005-01-31 2007-05-15 International Business Machines Corporation Structure and method for thin box SOI device
US11791385B2 (en) * 2005-03-11 2023-10-17 Wolfspeed, Inc. Wide bandgap transistors with gate-source field plates
US20060255377A1 (en) * 2005-05-12 2006-11-16 Der-Wei Tu Field effect transistor with novel field-plate structure
JP5105160B2 (ja) 2006-11-13 2012-12-19 クリー インコーポレイテッド トランジスタ
US7598128B2 (en) * 2007-05-22 2009-10-06 Sharp Laboratories Of America, Inc. Thin silicon-on-insulator double-diffused metal oxide semiconductor transistor
JP5479671B2 (ja) 2007-09-10 2014-04-23 ローム株式会社 半導体装置
US9679981B2 (en) 2013-06-09 2017-06-13 Cree, Inc. Cascode structures for GaN HEMTs
US9847411B2 (en) 2013-06-09 2017-12-19 Cree, Inc. Recessed field plate transistor structures
US10026830B2 (en) 2015-04-29 2018-07-17 Stmicroelectronics, Inc. Tunneling field effect transistor (TFET) having a semiconductor fin structure
US11195915B2 (en) * 2019-04-15 2021-12-07 Texas Instruments Incorporated Semiconductor devices with a sloped surface

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Publication number Priority date Publication date Assignee Title
US4922327A (en) * 1987-12-24 1990-05-01 University Of Toronto Innovations Foundation Semiconductor LDMOS device with upper and lower passages
DE69209678T2 (de) * 1991-02-01 1996-10-10 Philips Electronics Nv Halbleiteranordnung für Hochspannungsverwendung und Verfahren zur Herstellung
US5246870A (en) 1991-02-01 1993-09-21 North American Philips Corporation Method for making an improved high voltage thin film transistor having a linear doping profile
US5362979A (en) * 1991-02-01 1994-11-08 Philips Electronics North America Corporation SOI transistor with improved source-high performance
JP2731056B2 (ja) * 1991-10-09 1998-03-25 シャープ株式会社 薄膜トランジスタの製造方法
DE69316256T2 (de) * 1992-03-26 1998-08-06 Texas Instruments Inc Hochspannungstruktur mit oxydisolierter Source und RESURF-Drift-Zone in Massivsilizium
US5548150A (en) * 1993-03-10 1996-08-20 Kabushiki Kaisha Toshiba Field effect transistor
JP3217554B2 (ja) * 1993-09-17 2001-10-09 株式会社東芝 高耐圧半導体装置
US5378912A (en) * 1993-11-10 1995-01-03 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a lateral drift region
US5510275A (en) * 1993-11-29 1996-04-23 Texas Instruments Incorporated Method of making a semiconductor device with a composite drift region composed of a substrate and a second semiconductor material
US5382818A (en) * 1993-12-08 1995-01-17 Philips Electronics North America Corporation Lateral semiconductor-on-insulator (SOI) semiconductor device having a buried diode

Also Published As

Publication number Publication date
HK1000853A1 (en) 2002-08-23
TW360982B (en) 1999-06-11
KR100249290B1 (ko) 2000-03-15
EP0786818B1 (de) 2005-05-18
US5780900A (en) 1998-07-14
CN1158009A (zh) 1997-08-27
DE69634745T2 (de) 2006-02-23
CN1081833C (zh) 2002-03-27
KR970060530A (ko) 1997-08-12
EP0786818A3 (de) 1998-03-25
EP0786818A2 (de) 1997-07-30

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