DE69517662D1 - Feldeffekt-Transistor - Google Patents

Feldeffekt-Transistor

Info

Publication number
DE69517662D1
DE69517662D1 DE69517662T DE69517662T DE69517662D1 DE 69517662 D1 DE69517662 D1 DE 69517662D1 DE 69517662 T DE69517662 T DE 69517662T DE 69517662 T DE69517662 T DE 69517662T DE 69517662 D1 DE69517662 D1 DE 69517662D1
Authority
DE
Germany
Prior art keywords
field effect
effect transistor
transistor
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69517662T
Other languages
English (en)
Other versions
DE69517662T2 (de
Inventor
Tatsuo Nakayama
Hironobu Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE69517662D1 publication Critical patent/DE69517662D1/de
Publication of DE69517662T2 publication Critical patent/DE69517662T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
    • H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69517662T 1994-12-21 1995-12-20 Feldeffekt-Transistor Expired - Lifetime DE69517662T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6335835A JP2674539B2 (ja) 1994-12-21 1994-12-21 電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69517662D1 true DE69517662D1 (de) 2000-08-03
DE69517662T2 DE69517662T2 (de) 2001-04-19

Family

ID=18292942

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517662T Expired - Lifetime DE69517662T2 (de) 1994-12-21 1995-12-20 Feldeffekt-Transistor

Country Status (4)

Country Link
US (1) US5801405A (de)
EP (1) EP0718890B1 (de)
JP (1) JP2674539B2 (de)
DE (1) DE69517662T2 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3141838B2 (ja) 1998-03-12 2001-03-07 日本電気株式会社 電界効果トランジスタ
GB0206572D0 (en) 2002-03-20 2002-05-01 Qinetiq Ltd Field effect transistors
JP5525013B2 (ja) * 2012-08-03 2014-06-18 日本電信電話株式会社 電界効果型トランジスタ構造の製造方法
JP6528545B2 (ja) * 2015-06-03 2019-06-12 富士通株式会社 半導体装置及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4984242A (en) * 1989-09-18 1991-01-08 Spectra Diode Laboratories, Inc. GaAs/AlGaAs heterostructure laser containing indium
JP2679396B2 (ja) * 1990-10-25 1997-11-19 日本電気株式会社 電界効果トランジスタ
US5436470A (en) * 1991-01-14 1995-07-25 Sumitomo Electric Industries, Ltd. Field effect transistor
US5331410A (en) * 1991-04-26 1994-07-19 Sumitomo Electric Industries, Ltd. Field effect transistor having a sandwiched channel layer
JP3071880B2 (ja) * 1991-07-30 2000-07-31 日本電信電話株式会社 高電子移動度トランジスタ
JP3173080B2 (ja) * 1991-12-05 2001-06-04 日本電気株式会社 電界効果トランジスタ
US5453631A (en) * 1992-05-06 1995-09-26 Nec Corporation Field effect transistor having a multi-layer channel
JP2914049B2 (ja) * 1992-10-27 1999-06-28 株式会社デンソー ヘテロ接合を有する化合物半導体基板およびそれを用いた電界効果トランジスタ

Also Published As

Publication number Publication date
EP0718890A1 (de) 1996-06-26
JP2674539B2 (ja) 1997-11-12
DE69517662T2 (de) 2001-04-19
US5801405A (en) 1998-09-01
JPH08181304A (ja) 1996-07-12
EP0718890B1 (de) 2000-06-28

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Legal Events

Date Code Title Description
8332 No legal effect for de
8370 Indication of lapse of patent is to be deleted
8364 No opposition during term of opposition