DE69317480D1 - Feldeffekttransistor - Google Patents
FeldeffekttransistorInfo
- Publication number
- DE69317480D1 DE69317480D1 DE69317480T DE69317480T DE69317480D1 DE 69317480 D1 DE69317480 D1 DE 69317480D1 DE 69317480 T DE69317480 T DE 69317480T DE 69317480 T DE69317480 T DE 69317480T DE 69317480 D1 DE69317480 D1 DE 69317480D1
- Authority
- DE
- Germany
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4179429A JPH0629520A (ja) | 1992-06-12 | 1992-06-12 | 電界効果トランジスタ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69317480D1 true DE69317480D1 (de) | 1998-04-23 |
| DE69317480T2 DE69317480T2 (de) | 1998-07-09 |
Family
ID=16065708
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69317480T Expired - Fee Related DE69317480T2 (de) | 1992-06-12 | 1993-06-11 | Feldeffekttransistor |
Country Status (4)
| Country | Link |
|---|---|
| EP (1) | EP0577998B1 (de) |
| JP (1) | JPH0629520A (de) |
| KR (1) | KR940001458A (de) |
| DE (1) | DE69317480T2 (de) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3355598A (en) * | 1964-11-25 | 1967-11-28 | Rca Corp | Integrated logic arrays employing insulated-gate field-effect devices having a common source region and shared gates |
| JPS5753151A (en) * | 1980-09-16 | 1982-03-30 | Nippon Telegr & Teleph Corp <Ntt> | And circuit |
| JPH0695570B2 (ja) * | 1985-02-07 | 1994-11-24 | 三菱電機株式会社 | 半導体集積回路装置 |
| US5005059A (en) * | 1989-05-01 | 1991-04-02 | Motorola, Inc. | Digital-to-analog converting field effect device and circuitry |
-
1992
- 1992-06-12 JP JP4179429A patent/JPH0629520A/ja active Pending
-
1993
- 1993-06-02 KR KR1019930009886A patent/KR940001458A/ko not_active Application Discontinuation
- 1993-06-11 EP EP93109418A patent/EP0577998B1/de not_active Expired - Lifetime
- 1993-06-11 DE DE69317480T patent/DE69317480T2/de not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP0577998B1 (de) | 1998-03-18 |
| DE69317480T2 (de) | 1998-07-09 |
| KR940001458A (ko) | 1994-01-11 |
| EP0577998A2 (de) | 1994-01-12 |
| JPH0629520A (ja) | 1994-02-04 |
| EP0577998A3 (de) | 1994-02-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |