JPS5753151A - And circuit - Google Patents
And circuitInfo
- Publication number
- JPS5753151A JPS5753151A JP55128193A JP12819380A JPS5753151A JP S5753151 A JPS5753151 A JP S5753151A JP 55128193 A JP55128193 A JP 55128193A JP 12819380 A JP12819380 A JP 12819380A JP S5753151 A JPS5753151 A JP S5753151A
- Authority
- JP
- Japan
- Prior art keywords
- region
- semiconductor region
- gate electrodes
- crystal silicon
- active element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 abstract 6
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Logic Circuits (AREA)
Abstract
PURPOSE:To obtain a logical operation circuit whose occupying area is small one a semiconductor substrate, by providing active elements, which have plural gate electrodes through insulating layers, in the common semiconductor region. CONSTITUTION:An active element Q has a semiconductor region 1 of N<+> single- crystal silicon, a semiconductor region 2 of N<-> single-crystal silicon connected to the region 1 and a semiconductor region 3 of P<+> single-crystal silicon which forms a P-N junction 4 with the region 2, and the active element Q has plural gate electrodes G1-GN, which face to one another through an insulating layer 5 and extend in parallel with the direction connecting regions 1 and 3, in the region 2. Plural input signal sources A1-AN are connected between gate electrodes G1-GN and the semiconductor region 3, respectively, and an output terminal 6 is led out from the middle point of connection between the active element Q and a load L.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55128193A JPS5753151A (en) | 1980-09-16 | 1980-09-16 | And circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55128193A JPS5753151A (en) | 1980-09-16 | 1980-09-16 | And circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5753151A true JPS5753151A (en) | 1982-03-30 |
Family
ID=14978746
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55128193A Pending JPS5753151A (en) | 1980-09-16 | 1980-09-16 | And circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5753151A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128965A (en) * | 1981-02-02 | 1982-08-10 | Seiko Epson Corp | Mis type semiconductor device |
EP0577998A2 (en) * | 1992-06-12 | 1994-01-12 | Yozan Inc. | Field effect transistor |
-
1980
- 1980-09-16 JP JP55128193A patent/JPS5753151A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57128965A (en) * | 1981-02-02 | 1982-08-10 | Seiko Epson Corp | Mis type semiconductor device |
EP0577998A2 (en) * | 1992-06-12 | 1994-01-12 | Yozan Inc. | Field effect transistor |
EP0577998A3 (en) * | 1992-06-12 | 1994-02-16 | Yozan Inc |
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