JPS5650555A - Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same - Google Patents

Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same

Info

Publication number
JPS5650555A
JPS5650555A JP12538979A JP12538979A JPS5650555A JP S5650555 A JPS5650555 A JP S5650555A JP 12538979 A JP12538979 A JP 12538979A JP 12538979 A JP12538979 A JP 12538979A JP S5650555 A JPS5650555 A JP S5650555A
Authority
JP
Japan
Prior art keywords
type
region
switching
elements
same
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12538979A
Other languages
Japanese (ja)
Other versions
JPS6355218B2 (en
Inventor
Takashi Sakamoto
Hisahiro Moriuchi
Atsuo Masumura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Renesas Eastern Japan Semiconductor Inc
Original Assignee
Hitachi Tokyo Electronics Co Ltd
Hitachi Ltd
Hitachi Ome Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Tokyo Electronics Co Ltd, Hitachi Ltd, Hitachi Ome Electronic Co Ltd filed Critical Hitachi Tokyo Electronics Co Ltd
Priority to JP12538979A priority Critical patent/JPS5650555A/en
Publication of JPS5650555A publication Critical patent/JPS5650555A/en
Publication of JPS6355218B2 publication Critical patent/JPS6355218B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0921—Means for preventing a bipolar, e.g. thyristor, action between the different transistor regions, e.g. Latchup prevention

Abstract

PURPOSE:To prevent a latchup phenomenon by isolating a well region and an output terminal with a direct path of two P-N junctions of opposite direction to one another interposed with series connection of two switching elements. CONSTITUTION:The N<+> type source region S21 and P type well region W21 are connected through a P<+> type ohmic contact region C21 in a first N channel IGFET Q21, and the regions S21 and C21 are connected to an input terminal T1N1. The N<+> type source region S22 and P type well region W22 are connected through a P<+> type ohmic contact region C22 in the second N channel IGFETQ22, and the regions S22 and C22 are connected to an output terminal TOUT. When a switching control signal phi2 is applied to switching elements Q21, Q22 thereby conducting the elements and producing output voltages and control signal phi2 are applied to the switching elements Q21, Q22 thereby cutting off the elements. The current becomes a reverse current flowing through the reverse P-N junction.
JP12538979A 1979-10-01 1979-10-01 Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same Granted JPS5650555A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12538979A JPS5650555A (en) 1979-10-01 1979-10-01 Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12538979A JPS5650555A (en) 1979-10-01 1979-10-01 Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same

Publications (2)

Publication Number Publication Date
JPS5650555A true JPS5650555A (en) 1981-05-07
JPS6355218B2 JPS6355218B2 (en) 1988-11-01

Family

ID=14908919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12538979A Granted JPS5650555A (en) 1979-10-01 1979-10-01 Switching circuit formed in semiconductor integrated circuit device and multilevel voltage generation circuit using the same

Country Status (1)

Country Link
JP (1) JPS5650555A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283158A (en) * 1985-06-10 1986-12-13 Nec Corp Complementary mos transistor circuit
JPH01124718U (en) * 1988-02-18 1989-08-24
JP2012049946A (en) * 2010-08-30 2012-03-08 Toyota Motor Corp Driving device driving voltage driving-type element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61283158A (en) * 1985-06-10 1986-12-13 Nec Corp Complementary mos transistor circuit
JPH01124718U (en) * 1988-02-18 1989-08-24
JP2012049946A (en) * 2010-08-30 2012-03-08 Toyota Motor Corp Driving device driving voltage driving-type element

Also Published As

Publication number Publication date
JPS6355218B2 (en) 1988-11-01

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