JPS53108785A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108785A
JPS53108785A JP2360877A JP2360877A JPS53108785A JP S53108785 A JPS53108785 A JP S53108785A JP 2360877 A JP2360877 A JP 2360877A JP 2360877 A JP2360877 A JP 2360877A JP S53108785 A JPS53108785 A JP S53108785A
Authority
JP
Japan
Prior art keywords
diffused regions
buried region
semiconductor device
region
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2360877A
Other languages
Japanese (ja)
Other versions
JPS6262059B2 (en
Inventor
Mitsutoshi Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2360877A priority Critical patent/JPS53108785A/en
Publication of JPS53108785A publication Critical patent/JPS53108785A/en
Publication of JPS6262059B2 publication Critical patent/JPS6262059B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/0237—Integrated injection logic structures [I2L] using vertical injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To make a logic circuit element of high efficiency and high speed by growing an epitaxial layer through a buried region on a semiconductor substrate, dividing said layer by an isolating region, forming diffused regions within respective layers, thereafter making the substrate as a common potential and providing an input electrode to the buried region and power source and output electrodes to the diffused regions respectively.
JP2360877A 1977-03-04 1977-03-04 Semiconductor device Granted JPS53108785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2360877A JPS53108785A (en) 1977-03-04 1977-03-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2360877A JPS53108785A (en) 1977-03-04 1977-03-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53108785A true JPS53108785A (en) 1978-09-21
JPS6262059B2 JPS6262059B2 (en) 1987-12-24

Family

ID=12115316

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2360877A Granted JPS53108785A (en) 1977-03-04 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108785A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0555361U (en) * 1991-12-26 1993-07-23 ティアック株式会社 Disk device

Also Published As

Publication number Publication date
JPS6262059B2 (en) 1987-12-24

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