JPS53108786A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS53108786A JPS53108786A JP2360977A JP2360977A JPS53108786A JP S53108786 A JPS53108786 A JP S53108786A JP 2360977 A JP2360977 A JP 2360977A JP 2360977 A JP2360977 A JP 2360977A JP S53108786 A JPS53108786 A JP S53108786A
- Authority
- JP
- Japan
- Prior art keywords
- diffused regions
- buried region
- electrode
- semiconductor device
- region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Semiconductor Memories (AREA)
- Logic Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a logic circuit element making high speed operation at high efficiency by so forming the element that after an epitaxial layer is grown through a buried region on a semiconductor substrate and is divided by an isolating region and diffused regions are formed within the respective layers the substrate is made a common potential and an input electrode to the buried region and a power source electrode and an output electrode are provided to the diffused regions respectively.
COPYRIGHT: (C)1978,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2360977A JPS53108786A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2360977A JPS53108786A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS53108786A true JPS53108786A (en) | 1978-09-21 |
JPS6216026B2 JPS6216026B2 (en) | 1987-04-10 |
Family
ID=12115344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2360977A Granted JPS53108786A (en) | 1977-03-04 | 1977-03-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS53108786A (en) |
-
1977
- 1977-03-04 JP JP2360977A patent/JPS53108786A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS6216026B2 (en) | 1987-04-10 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS5743438A (en) | Semiconductor device and manufacture thereof | |
JPS5324277A (en) | Semiconductor devic e and its production | |
JPS5350686A (en) | Production of semiconductor integrated circuit | |
JPS52113684A (en) | Semiconductor device | |
JPS52124889A (en) | Semiconductor photoelectric transducer | |
JPS53108786A (en) | Semiconductor device | |
JPS53128285A (en) | Semiconductor device and production of the same | |
JPS53108785A (en) | Semiconductor device | |
JPS533075A (en) | Production of mos structure field effect semiconductor device | |
JPS5379378A (en) | Semoconductor davice and its production | |
JPS5310979A (en) | Semiconductor device and its production | |
JPS5339880A (en) | Field effect type semiconductor device and its production | |
JPS53108784A (en) | Semiconductor device | |
JPS52153669A (en) | Photo mask of semiconductor integrated circuit | |
JPS5316586A (en) | Semiconductor device | |
JPS5324289A (en) | Production of semiconductor device | |
JPS5419371A (en) | Semiconductor device | |
JPS545391A (en) | Manufacture of semiconductor device | |
JPS547891A (en) | Manufacture for planar semiconductor light emission device | |
JPS5326583A (en) | Semiconductor device | |
JPS5314585A (en) | Semiconductor device | |
JPS5368085A (en) | Semiconductor device | |
JPS5310286A (en) | Production of semiconductor device | |
JPS537349A (en) | Semiconductor device | |
JPS52153668A (en) | Photo mask of semiconductor integrated circuit |