JPS53108786A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS53108786A
JPS53108786A JP2360977A JP2360977A JPS53108786A JP S53108786 A JPS53108786 A JP S53108786A JP 2360977 A JP2360977 A JP 2360977A JP 2360977 A JP2360977 A JP 2360977A JP S53108786 A JPS53108786 A JP S53108786A
Authority
JP
Japan
Prior art keywords
diffused regions
buried region
electrode
semiconductor device
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2360977A
Other languages
Japanese (ja)
Other versions
JPS6216026B2 (en
Inventor
Mitsutoshi Sugawara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP2360977A priority Critical patent/JPS53108786A/en
Publication of JPS53108786A publication Critical patent/JPS53108786A/en
Publication of JPS6216026B2 publication Critical patent/JPS6216026B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Logic Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE: To obtain a logic circuit element making high speed operation at high efficiency by so forming the element that after an epitaxial layer is grown through a buried region on a semiconductor substrate and is divided by an isolating region and diffused regions are formed within the respective layers the substrate is made a common potential and an input electrode to the buried region and a power source electrode and an output electrode are provided to the diffused regions respectively.
COPYRIGHT: (C)1978,JPO&Japio
JP2360977A 1977-03-04 1977-03-04 Semiconductor device Granted JPS53108786A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2360977A JPS53108786A (en) 1977-03-04 1977-03-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2360977A JPS53108786A (en) 1977-03-04 1977-03-04 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS53108786A true JPS53108786A (en) 1978-09-21
JPS6216026B2 JPS6216026B2 (en) 1987-04-10

Family

ID=12115344

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2360977A Granted JPS53108786A (en) 1977-03-04 1977-03-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS53108786A (en)

Also Published As

Publication number Publication date
JPS6216026B2 (en) 1987-04-10

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