JPS5368085A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5368085A
JPS5368085A JP14314076A JP14314076A JPS5368085A JP S5368085 A JPS5368085 A JP S5368085A JP 14314076 A JP14314076 A JP 14314076A JP 14314076 A JP14314076 A JP 14314076A JP S5368085 A JPS5368085 A JP S5368085A
Authority
JP
Japan
Prior art keywords
region
type
semiconductor device
integrated circuit
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14314076A
Other languages
Japanese (ja)
Inventor
Tetsuya Iizuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14314076A priority Critical patent/JPS5368085A/en
Publication of JPS5368085A publication Critical patent/JPS5368085A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
    • H01L27/0229—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of bipolar structures
    • H01L27/0233—Integrated injection logic structures [I2L]
    • H01L27/024—Integrated injection logic structures [I2L] using field effect injector structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Logic Circuits (AREA)

Abstract

PURPOSE:To obtain a logical integrated circuit, by forming the P-type region isolated at the N<+> earth terminal region on the P-type substrate and then providing the N-type signal input terminal region, signal output region and external power supply region respectively into the P-type region.
JP14314076A 1976-11-29 1976-11-29 Semiconductor device Pending JPS5368085A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14314076A JPS5368085A (en) 1976-11-29 1976-11-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14314076A JPS5368085A (en) 1976-11-29 1976-11-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5368085A true JPS5368085A (en) 1978-06-17

Family

ID=15331851

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14314076A Pending JPS5368085A (en) 1976-11-29 1976-11-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5368085A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485027A (en) * 1988-11-08 1996-01-16 Siliconix Incorporated Isolated DMOS IC technology

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5485027A (en) * 1988-11-08 1996-01-16 Siliconix Incorporated Isolated DMOS IC technology

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