DE69504128D1 - Modulationsdotierter Feldeffekttransistor - Google Patents

Modulationsdotierter Feldeffekttransistor

Info

Publication number
DE69504128D1
DE69504128D1 DE69504128T DE69504128T DE69504128D1 DE 69504128 D1 DE69504128 D1 DE 69504128D1 DE 69504128 T DE69504128 T DE 69504128T DE 69504128 T DE69504128 T DE 69504128T DE 69504128 D1 DE69504128 D1 DE 69504128D1
Authority
DE
Germany
Prior art keywords
modulation
field effect
effect transistor
doped field
doped
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69504128T
Other languages
English (en)
Other versions
DE69504128T2 (de
Inventor
Charles E Weitzel
Neal Mellen
Kenneth L Davis
Paige Holm
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Application granted granted Critical
Publication of DE69504128D1 publication Critical patent/DE69504128D1/de
Publication of DE69504128T2 publication Critical patent/DE69504128T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Junction Field-Effect Transistors (AREA)
DE69504128T 1994-05-03 1995-04-27 Modulationsdotierter Feldeffekttransistor Expired - Fee Related DE69504128T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/238,081 US5399887A (en) 1994-05-03 1994-05-03 Modulation doped field effect transistor

Publications (2)

Publication Number Publication Date
DE69504128D1 true DE69504128D1 (de) 1998-09-24
DE69504128T2 DE69504128T2 (de) 1999-03-11

Family

ID=22896418

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69504128T Expired - Fee Related DE69504128T2 (de) 1994-05-03 1995-04-27 Modulationsdotierter Feldeffekttransistor

Country Status (5)

Country Link
US (1) US5399887A (de)
EP (1) EP0681332B1 (de)
JP (1) JPH07307461A (de)
KR (1) KR950034764A (de)
DE (1) DE69504128T2 (de)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3216804B2 (ja) * 1998-01-06 2001-10-09 富士電機株式会社 炭化けい素縦形ｆｅｔの製造方法および炭化けい素縦形ｆｅｔ
US6150680A (en) * 1998-03-05 2000-11-21 Welch Allyn, Inc. Field effect semiconductor device having dipole barrier
JP2002016262A (ja) * 2000-04-25 2002-01-18 Furukawa Electric Co Ltd:The 縦型電界効果トランジスタ
JP3925253B2 (ja) * 2002-03-15 2007-06-06 住友電気工業株式会社 横型接合型電界効果トランジスタおよびその製造方法
US6927414B2 (en) * 2003-06-17 2005-08-09 International Business Machines Corporation High speed lateral heterojunction MISFETs realized by 2-dimensional bandgap engineering and methods thereof
US7253015B2 (en) * 2004-02-17 2007-08-07 Velox Semiconductor Corporation Low doped layer for nitride-based semiconductor device
JP4650224B2 (ja) * 2004-11-19 2011-03-16 日亜化学工業株式会社 電界効果トランジスタ
JP5087818B2 (ja) * 2005-03-25 2012-12-05 日亜化学工業株式会社 電界効果トランジスタ
US7728402B2 (en) * 2006-08-01 2010-06-01 Cree, Inc. Semiconductor devices including schottky diodes with controlled breakdown
US8835987B2 (en) * 2007-02-27 2014-09-16 Cree, Inc. Insulated gate bipolar transistors including current suppressing layers
CN101689564B (zh) * 2007-07-09 2012-01-18 飞思卡尔半导体公司 异质结构场效应晶体管及其制造方法和集成电路
KR100977414B1 (ko) 2007-11-15 2010-08-24 한국전기연구원 내열성 전극물질을 이용한 실리콘 카바이드 반도체소자의제조 방법
US8232558B2 (en) 2008-05-21 2012-07-31 Cree, Inc. Junction barrier Schottky diodes with current surge capability
US8193848B2 (en) * 2009-06-02 2012-06-05 Cree, Inc. Power switching devices having controllable surge current capabilities
US8629509B2 (en) * 2009-06-02 2014-01-14 Cree, Inc. High voltage insulated gate bipolar transistors with minority carrier diverter
US8541787B2 (en) * 2009-07-15 2013-09-24 Cree, Inc. High breakdown voltage wide band-gap MOS-gated bipolar junction transistors with avalanche capability
TW201110344A (en) * 2009-09-04 2011-03-16 Univ Nat Chiao Tung GaN transistor with nitrogen-rich tungsten nitride Schottky gate contact and method of forming the same
US9117739B2 (en) 2010-03-08 2015-08-25 Cree, Inc. Semiconductor devices with heterojunction barrier regions and methods of fabricating same
US8415671B2 (en) 2010-04-16 2013-04-09 Cree, Inc. Wide band-gap MOSFETs having a heterojunction under gate trenches thereof and related methods of forming such devices
US8618582B2 (en) 2011-09-11 2013-12-31 Cree, Inc. Edge termination structure employing recesses for edge termination elements
US8664665B2 (en) 2011-09-11 2014-03-04 Cree, Inc. Schottky diode employing recesses for elements of junction barrier array
US8680587B2 (en) 2011-09-11 2014-03-25 Cree, Inc. Schottky diode
US20150108500A1 (en) * 2013-10-18 2015-04-23 Infineon Technologies Austria Ag Semiconductor Device and Method of Manufacturing the Same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3542482A1 (de) * 1985-11-30 1987-06-04 Licentia Gmbh Modulationsdotierter feldeffekttransistor
US4805003A (en) * 1987-11-10 1989-02-14 Motorola Inc. GaAs MESFET
JPH01257372A (ja) * 1988-04-07 1989-10-13 Fuji Electric Co Ltd 絶縁ゲート型電界効果トランジスタ
US5077589A (en) * 1990-03-23 1991-12-31 Motorola, Inc. MESFET structure having a shielding region
US5334865A (en) * 1991-07-31 1994-08-02 Allied-Signal Inc. MODFET structure for threshold control
US5323030A (en) * 1993-09-24 1994-06-21 The United States Of America As Represented By The Secretary Of The Army Field effect real space transistor

Also Published As

Publication number Publication date
JPH07307461A (ja) 1995-11-21
EP0681332A1 (de) 1995-11-08
KR950034764A (ko) 1995-12-28
US5399887A (en) 1995-03-21
DE69504128T2 (de) 1999-03-11
EP0681332B1 (de) 1998-08-19

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee