JP5087818B2 - 電界効果トランジスタ - Google Patents
電界効果トランジスタ Download PDFInfo
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- JP5087818B2 JP5087818B2 JP2005088909A JP2005088909A JP5087818B2 JP 5087818 B2 JP5087818 B2 JP 5087818B2 JP 2005088909 A JP2005088909 A JP 2005088909A JP 2005088909 A JP2005088909 A JP 2005088909A JP 5087818 B2 JP5087818 B2 JP 5087818B2
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- 230000005669 field effect Effects 0.000 title claims description 56
- 239000004065 semiconductor Substances 0.000 claims description 123
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 13
- 230000015572 biosynthetic process Effects 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 8
- 239000010410 layer Substances 0.000 description 220
- 229910002601 GaN Inorganic materials 0.000 description 47
- 239000000758 substrate Substances 0.000 description 27
- 229910002704 AlGaN Inorganic materials 0.000 description 24
- 230000015556 catabolic process Effects 0.000 description 22
- 230000005684 electric field Effects 0.000 description 13
- 239000012535 impurity Substances 0.000 description 9
- 229910052594 sapphire Inorganic materials 0.000 description 8
- 239000010980 sapphire Substances 0.000 description 8
- 239000000969 carrier Substances 0.000 description 7
- 239000007789 gas Substances 0.000 description 7
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 7
- 150000004767 nitrides Chemical class 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000008186 active pharmaceutical agent Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41741—Source or drain electrodes for field effect devices for vertical or pseudo-vertical devices
Description
(実施の形態1)
(キャリア走行層13、キャリア供給層14)
(電極)
(ゲート電極16)
(ソース電極15)
(実施の形態2)
(ドレイン電極37)
(ゲート電極36)
(ソース電極35)
(キャリア供給層34)
(実施の形態3)
(実施の形態4)
(電界効果トランジスタ)
(電界効果トランジスタの製造方法)
(フォトリソグラフィ工程)
700…GaN系HEMT
12…半導体構造
13、33…キャリア走行層
13a、33a…チャネル
14、34…キャリア供給層
34A…n型AlGaN層
34B…アンドープAlGaN層
15、35、45、65…ソース電極
16、36、46、66…ゲート電極
17、37、47、67…ドレイン電極
71…サファイア基板
72…バッファ層
73…アンドープGaN層
73a…領域
74…n型AlGaN層
75…ソース電極
76…ゲート電極
77…ドレイン電極
Claims (6)
- キャリア走行層を含む半導体構造と、ソース電極と、ゲート電極と、ドレイン電極とを備える電界効果トランジスタであって、
前記半導体構造はIII−V族化合物半導体層よりなり、
前記半導体構造上に前記ゲート電極及び前記ソース電極が形成され、
前記半導体構造の前記ゲート電極形成面と対向する面に、前記ドレイン電極が形成されており、
前記ゲート電極は、前記ソース電極と前記ドレイン電極との間に位置されて、かつ環状に形成されており、
前記半導体構造が、
Al x In y Ga 1-x-y N(0≦x、0≦y、x+y≦1)で構成される第1半導体層と、
Al x In y Ga 1-x-y N(0≦x、0≦y、x+y≦1)で構成され、前記第1半導体層よりもバンドギャップエネルギーの大きい第2半導体層と
を有し、
前記第1半導体層側に前記ゲート電極及び前記ソース電極が形成され、
前記第2半導体層側に前記ドレイン電極が形成されており、
前記第2半導体層と前記ドレイン電極との間に介在層が形成されており、
前記ゲート電極は、ソース電極の形成された領域を囲むように環状に形成され、さらに前記ドレイン電極が、前記ゲート電極の形成された領域と対向する半導体構造の面上の領域を囲むように環状に形成されてなることを特徴とする電界効果トランジスタ。 - キャリア走行層を含む半導体構造と、ソース電極と、ゲート電極と、ドレイン電極とを備える電界効果トランジスタであって、
前記半導体構造はIII−V族化合物半導体層よりなり、
前記半導体構造上に前記ゲート電極及び前記ソース電極が形成され、
前記半導体構造の前記ゲート電極形成面と対向する面に、前記ドレイン電極が形成されており、
前記ゲート電極は、前記ソース電極と前記ドレイン電極との間に位置されて、かつ環状に形成されており、
前記半導体構造が、
Al x In y Ga 1-x-y N(0≦x、0≦y、x+y≦1)で構成される第1半導体層と、
Al x In y Ga 1-x-y N(0≦x、0≦y、x+y≦1)で構成され、前記第1半導体層よりもバンドギャップエネルギーの大きい第2半導体層と
を有し、
前記第1半導体層側に前記ゲート電極及び前記ソース電極が形成され、
前記第2半導体層側に前記ドレイン電極が形成されており、
前記第2半導体層と前記ドレイン電極との間に介在層が形成されており、
前記ゲート電極は、ドレイン電極の形成された領域と対向する半導体構造の面上の領域を囲むように環状に形成され、さらに前記ソース電極が、前記ゲート電極の形成された領域を囲むように環状に形成されてなることを特徴とする電界効果トランジスタ。 - 請求項1又は2に記載に電界効果トランジスタであって、
前記第1及び第2半導体層はGaN基板上に形成されており、
前記ゲート電極及びソース電極と、前記ドレイン電極は、前記GaN基板を含む前記半導体構造の両面に形成されてなることを特徴とする電界効果トランジスタ。 - 請求項1から3のいずれか一に記載の電界効果トランジスタであって、
前記第1半導体層の端面が露出されると共に、前記ソース電極が該端面にオーミック接触するように形成されていることを特徴とする電界効果トランジスタ。 - 請求項1から4のいずれか一に記載の電界効果トランジスタであって、
前記第1半導体層がキャリア走行層であり、前記第2半導体層がキャリア供給層であることを特徴とする電界効果トランジスタ。 - 請求項1から5のいずれか一に記載の電界効果トランジスタであって、
前記電界効果トランジスタがHEMTであることを特徴とする電界効果トランジスタ。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005088909A JP5087818B2 (ja) | 2005-03-25 | 2005-03-25 | 電界効果トランジスタ |
EP06111709.9A EP1705714B1 (en) | 2005-03-25 | 2006-03-24 | Field effect transistor and method of manufacturing the same |
US11/387,847 US7339206B2 (en) | 2005-03-25 | 2006-03-24 | Field effect transistor including a group III-V compound semiconductor layer |
US11/970,357 US7560752B2 (en) | 2005-03-25 | 2008-01-07 | Field effect transistor including two group III-V compound semiconductor layers |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005088909A JP5087818B2 (ja) | 2005-03-25 | 2005-03-25 | 電界効果トランジスタ |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2006269939A JP2006269939A (ja) | 2006-10-05 |
JP2006269939A5 JP2006269939A5 (ja) | 2008-05-08 |
JP5087818B2 true JP5087818B2 (ja) | 2012-12-05 |
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JP2005088909A Active JP5087818B2 (ja) | 2005-03-25 | 2005-03-25 | 電界効果トランジスタ |
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---|---|
US (2) | US7339206B2 (ja) |
EP (1) | EP1705714B1 (ja) |
JP (1) | JP5087818B2 (ja) |
Families Citing this family (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7408399B2 (en) * | 2005-06-27 | 2008-08-05 | International Rectifier Corporation | Active driving of normally on, normally off cascoded configuration devices through asymmetrical CMOS |
JP2008227074A (ja) * | 2007-03-12 | 2008-09-25 | Rohm Co Ltd | 窒化物半導体素子の製造方法および窒化物半導体素子 |
JP2008306130A (ja) * | 2007-06-11 | 2008-12-18 | Sanken Electric Co Ltd | 電界効果型半導体装置及びその製造方法 |
US7915643B2 (en) * | 2007-09-17 | 2011-03-29 | Transphorm Inc. | Enhancement mode gallium nitride power devices |
WO2010074275A1 (ja) * | 2008-12-26 | 2010-07-01 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ、ヘテロ接合電界トランジスタの製造方法、および電子装置 |
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Also Published As
Publication number | Publication date |
---|---|
EP1705714A3 (en) | 2009-09-30 |
EP1705714A2 (en) | 2006-09-27 |
US20060231861A1 (en) | 2006-10-19 |
US20080135854A1 (en) | 2008-06-12 |
US7560752B2 (en) | 2009-07-14 |
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JP2006269939A (ja) | 2006-10-05 |
US7339206B2 (en) | 2008-03-04 |
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