NO976070D0 - Felteffekttransistor - Google Patents
FelteffekttransistorInfo
- Publication number
- NO976070D0 NO976070D0 NO976070A NO976070A NO976070D0 NO 976070 D0 NO976070 D0 NO 976070D0 NO 976070 A NO976070 A NO 976070A NO 976070 A NO976070 A NO 976070A NO 976070 D0 NO976070 D0 NO 976070D0
- Authority
- NO
- Norway
- Prior art keywords
- field effect
- effect transistor
- transistor
- field
- effect
- Prior art date
Links
- 230000005669 field effect Effects 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/802—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with heterojunction gate, e.g. transistors with semiconductor layer acting as gate insulating layer, MIS-like transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP34479596 | 1996-12-25 | ||
| JP33856697A JP3601649B2 (ja) | 1996-12-25 | 1997-12-09 | 電界効果トランジスタ |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO976070D0 true NO976070D0 (no) | 1997-12-23 |
| NO976070L NO976070L (no) | 1998-06-26 |
| NO322204B1 NO322204B1 (no) | 2006-08-28 |
Family
ID=26576133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19976070A NO322204B1 (no) | 1996-12-25 | 1997-12-23 | Felteffekttransistor |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6008509A (no) |
| EP (1) | EP0851510A3 (no) |
| JP (1) | JP3601649B2 (no) |
| KR (1) | KR100548047B1 (no) |
| CA (1) | CA2225844C (no) |
| NO (1) | NO322204B1 (no) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994727A (en) * | 1997-09-30 | 1999-11-30 | Samsung Electronics Co., Ltd. | High performance gaas field effect transistor structure |
| JP2001077353A (ja) * | 1999-06-30 | 2001-03-23 | Toshiba Corp | 高電子移動度トランジスタ及び電力増幅器 |
| US6821829B1 (en) | 2000-06-12 | 2004-11-23 | Freescale Semiconductor, Inc. | Method of manufacturing a semiconductor component and semiconductor component thereof |
| US20060276043A1 (en) * | 2003-03-21 | 2006-12-07 | Johnson Mark A L | Method and systems for single- or multi-period edge definition lithography |
| US20070029643A1 (en) * | 2003-03-21 | 2007-02-08 | Johnson Mark A L | Methods for nanoscale structures from optical lithography and subsequent lateral growth |
| US6929987B2 (en) * | 2003-12-23 | 2005-08-16 | Hrl Laboratories, Llc | Microelectronic device fabrication method |
| CN102369597B (zh) * | 2009-04-07 | 2014-04-09 | 住友化学株式会社 | 半导体基板、半导体基板的制造方法、和电子器件 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6095973A (ja) * | 1983-10-31 | 1985-05-29 | Fujitsu Ltd | 半導体装置 |
| JPS60189268A (ja) * | 1984-03-08 | 1985-09-26 | Fujitsu Ltd | 半導体装置 |
| US4745447A (en) * | 1985-06-14 | 1988-05-17 | American Telephone And Telegraph Company, At&T Bell Laboratories | Gallium arsenide on gallium indium arsenide Schottky barrier device |
| JPS62239584A (ja) * | 1986-04-11 | 1987-10-20 | Hitachi Ltd | 半導体装置 |
| US5091759A (en) * | 1989-10-30 | 1992-02-25 | Texas Instruments Incorporated | Heterostructure field effect transistor |
| US5150822A (en) * | 1989-10-27 | 1992-09-29 | The Wellcome Foundation Limited | Mixing head for dispensing an actine ingredient |
| JP2924239B2 (ja) * | 1991-03-26 | 1999-07-26 | 三菱電機株式会社 | 電界効果トランジスタ |
| US5331410A (en) * | 1991-04-26 | 1994-07-19 | Sumitomo Electric Industries, Ltd. | Field effect transistor having a sandwiched channel layer |
| FR2684806B1 (fr) * | 1991-12-06 | 1994-03-18 | Picogiga Sa | Composant semiconducteur de puissance de type transistor a effet de champ, notamment a heterojonction. |
| JPH06333956A (ja) * | 1992-08-26 | 1994-12-02 | Sanyo Electric Co Ltd | 電界効果型半導体装置 |
| JP2611735B2 (ja) * | 1993-12-22 | 1997-05-21 | 日本電気株式会社 | ヘテロ接合ｆｅｔ |
| JP2661555B2 (ja) * | 1994-08-16 | 1997-10-08 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ |
-
1997
- 1997-12-09 JP JP33856697A patent/JP3601649B2/ja not_active Expired - Lifetime
- 1997-12-18 EP EP19970122413 patent/EP0851510A3/en not_active Withdrawn
- 1997-12-22 KR KR1019970071954A patent/KR100548047B1/ko active IP Right Grant
- 1997-12-23 NO NO19976070A patent/NO322204B1/no not_active IP Right Cessation
- 1997-12-23 CA CA002225844A patent/CA2225844C/en not_active Expired - Lifetime
- 1997-12-24 US US08/998,248 patent/US6008509A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP3601649B2 (ja) | 2004-12-15 |
| JPH10242451A (ja) | 1998-09-11 |
| CA2225844C (en) | 2001-11-06 |
| KR19980064470A (ko) | 1998-10-07 |
| EP0851510A2 (en) | 1998-07-01 |
| US6008509A (en) | 1999-12-28 |
| CA2225844A1 (en) | 1998-06-25 |
| EP0851510A3 (en) | 1999-02-24 |
| NO322204B1 (no) | 2006-08-28 |
| NO976070L (no) | 1998-06-26 |
| KR100548047B1 (ko) | 2007-11-09 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1K | Patent expired |