DE69615536D1 - Mos transistor - Google Patents

Mos transistor

Info

Publication number
DE69615536D1
DE69615536D1 DE69615536T DE69615536T DE69615536D1 DE 69615536 D1 DE69615536 D1 DE 69615536D1 DE 69615536 T DE69615536 T DE 69615536T DE 69615536 T DE69615536 T DE 69615536T DE 69615536 D1 DE69615536 D1 DE 69615536D1
Authority
DE
Germany
Prior art keywords
mos transistor
mos
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615536T
Other languages
English (en)
Other versions
DE69615536T2 (de
Inventor
Barry Hughes
William Moulding
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NXP BV
Original Assignee
Koninklijke Philips Electronics NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninklijke Philips Electronics NV filed Critical Koninklijke Philips Electronics NV
Publication of DE69615536D1 publication Critical patent/DE69615536D1/de
Application granted granted Critical
Publication of DE69615536T2 publication Critical patent/DE69615536T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Amplifiers (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
DE69615536T 1995-11-28 1996-11-19 Mos transistor Expired - Lifetime DE69615536T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9524334.1A GB9524334D0 (en) 1995-11-28 1995-11-28 Mos transistor
PCT/IB1996/001256 WO1997020352A1 (en) 1995-11-28 1996-11-19 Mos transistor

Publications (2)

Publication Number Publication Date
DE69615536D1 true DE69615536D1 (de) 2001-10-31
DE69615536T2 DE69615536T2 (de) 2002-05-08

Family

ID=10784587

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615536T Expired - Lifetime DE69615536T2 (de) 1995-11-28 1996-11-19 Mos transistor

Country Status (7)

Country Link
US (1) US6445034B1 (de)
EP (1) EP0806057B1 (de)
JP (1) JPH11500582A (de)
KR (1) KR100447381B1 (de)
DE (1) DE69615536T2 (de)
GB (1) GB9524334D0 (de)
WO (1) WO1997020352A1 (de)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008519047A (ja) * 2004-11-05 2008-06-05 セフアロン・インコーポレーテツド 癌処置
DE102004062357A1 (de) * 2004-12-14 2006-07-06 Atmel Germany Gmbh Versorgungsschaltung zur Erzeugung eines Referenzstroms mit vorgebbarer Temperaturabhängigkeit
US9466669B2 (en) 2014-05-05 2016-10-11 Samsung Electronics Co., Ltd. Multiple channel length finFETs with same physical gate length

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6022354B2 (ja) * 1977-09-20 1985-06-01 株式会社リコー 静電潜像現像方法
US4364041A (en) * 1978-07-12 1982-12-14 Sharp Kabushiki Kaisha Contrast controllable electrochromic display driver circuit
JPS5646556A (en) * 1979-09-21 1981-04-27 Nec Corp Field effect transistor
US4594577A (en) * 1980-09-02 1986-06-10 American Microsystems, Inc. Current mirror digital to analog converter
JPH0666339B2 (ja) * 1985-07-01 1994-08-24 日本電気株式会社 ２次元電子ガスｆｅｔ
JPH0669358B2 (ja) * 1985-07-11 1994-09-07 千代田化工建設株式会社 発酵装置
JPH01243591A (ja) * 1988-03-25 1989-09-28 Hitachi Ltd 半導体デバイス
JP2507007B2 (ja) * 1988-12-09 1996-06-12 松下電子工業株式会社 半導体装置
US5362988A (en) * 1992-05-01 1994-11-08 Texas Instruments Incorporated Local mid-rail generator circuit

Also Published As

Publication number Publication date
GB9524334D0 (en) 1996-01-31
EP0806057A1 (de) 1997-11-12
JPH11500582A (ja) 1999-01-12
KR19980701705A (ko) 1998-06-25
US6445034B1 (en) 2002-09-03
EP0806057B1 (de) 2001-09-26
WO1997020352A1 (en) 1997-06-05
KR100447381B1 (ko) 2004-10-14
DE69615536T2 (de) 2002-05-08

Similar Documents

Publication Publication Date Title
KR970703622A (ko) 전계효과 트랜지스터(punch-through field effect transistor)
DE69713761D1 (de) Spintransistor
DE69724578D1 (de) SOI-MOS-Feldeffekttransistor
DE69528203D1 (de) Transistor
DE69633167D1 (de) Vertikales MOS-Halbleiterbauelement
FI103617B (fi) Kanavatransistorit
ES1033081Y (es) Dispositivo de desague.
DE69808161D1 (de) Feldeffekttransistor
NO976070L (no) Felteffekttransistor
DE69615536D1 (de) Mos transistor
DE69517662D1 (de) Feldeffekt-Transistor
DK0735590T3 (da) Bipolær siliciumtransistor
KR960031627U (ko) 건축 배수용 방수구
KR970003714A (ko) 모스 트랜지스터 제조 방법
KR970003716A (ko) 모스 트랜지스터의 제조방법
DE69311093D1 (de) Feldeffekttransistor
KR960012686U (ko) 쇼트키 트랜지스터
KR970003774U (ko) 트랜지스터 고정구조
KR960033130U (ko) 트랜지스터 고정구조
KR960027799U (ko) 바이폴라 트랜지스터
KR970019784U (ko) 모오스 트랜지스터
KR970023745U (ko) 배수 조절구
KR970017907U (ko) 정수기의 배수받이
KR970017905U (ko) 정수기의 배수받이
KR970011994U (ko) 쇼케이스의 배수받이

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8320 Willingness to grant licences declared (paragraph 23)
8328 Change in the person/name/address of the agent

Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN

8327 Change in the person/name/address of the patent owner

Owner name: NXP B.V., EINDHOVEN, NL