KR970003714A - 모스 트랜지스터 제조 방법 - Google Patents

모스 트랜지스터 제조 방법 Download PDF

Info

Publication number
KR970003714A
KR970003714A KR1019950019126A KR19950019126A KR970003714A KR 970003714 A KR970003714 A KR 970003714A KR 1019950019126 A KR1019950019126 A KR 1019950019126A KR 19950019126 A KR19950019126 A KR 19950019126A KR 970003714 A KR970003714 A KR 970003714A
Authority
KR
South Korea
Prior art keywords
mos transistor
transistor manufacturing
manufacturing
mos
transistor
Prior art date
Application number
KR1019950019126A
Other languages
English (en)
Other versions
KR100325443B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950019126A priority Critical patent/KR100325443B1/ko
Publication of KR970003714A publication Critical patent/KR970003714A/ko
Application granted granted Critical
Publication of KR100325443B1 publication Critical patent/KR100325443B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28114—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor characterised by the sectional shape, e.g. T, inverted-T
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
    • H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
    • H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
    • H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
KR1019950019126A 1995-06-30 1995-06-30 모스트랜지스터제조방법 KR100325443B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950019126A KR100325443B1 (ko) 1995-06-30 1995-06-30 모스트랜지스터제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950019126A KR100325443B1 (ko) 1995-06-30 1995-06-30 모스트랜지스터제조방법

Publications (2)

Publication Number Publication Date
KR970003714A true KR970003714A (ko) 1997-01-28
KR100325443B1 KR100325443B1 (ko) 2002-07-27

Family

ID=37478217

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950019126A KR100325443B1 (ko) 1995-06-30 1995-06-30 모스트랜지스터제조방법

Country Status (1)

Country Link
KR (1) KR100325443B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493774B1 (ko) * 2001-09-13 2005-06-08 파이오니아 플라즈마 디스플레이 가부시키가이샤 스크린판 및 이를 이용한 스크린인쇄방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100493774B1 (ko) * 2001-09-13 2005-06-08 파이오니아 플라즈마 디스플레이 가부시키가이샤 스크린판 및 이를 이용한 스크린인쇄방법

Also Published As

Publication number Publication date
KR100325443B1 (ko) 2002-07-27

Similar Documents

Publication Publication Date Title
KR0137902B1 (en) Mos transistor & manufacturing method thereof
KR970703622A (ko) 전계효과 트랜지스터(punch-through field effect transistor)
KR960012575A (ko) 반도체 장치 제조 방법
DE69600911D1 (de) Isolierte Gate-Transistor-Ansteuerschaltung
DE69503396D1 (de) Herstellungsverfahren für MOS-Transistor
KR960012574A (ko) 반도체장치 제조방법
KR970004015A (ko) 반도체장치 및 그의 제조방법
KR960009213A (ko) 개량된 바이폴라 트랜지스터 및 그 제조 방법
FI954241A (fi) Puolijohdelaitteen valmistusmenetelmä
DE69528203D1 (de) Transistor
DE69633167D1 (de) Vertikales MOS-Halbleiterbauelement
KR970003714A (ko) 모스 트랜지스터 제조 방법
DE69615536D1 (de) Mos transistor
KR970003716A (ko) 모스 트랜지스터의 제조방법
DE69923613D1 (de) Dünnschichttransistor-Herstellungsverfahren
KR970004065A (ko) 모스 트랜지스터의 제조방법
KR970004171A (ko) 반도체장치 및 그 제조방법
DE69517662D1 (de) Feldeffekt-Transistor
KR970003712A (ko) 엘디디 모스(ldd mos) 트랜지스터 제조 방법
DE69530871D1 (de) Halbleiteranordnung MOS-typ
KR970034791U (ko) 드레인 홀 플러그
KR970053009A (ko) 바이폴라 접합 트랜지스터 제조방법
KR970003418A (ko) 고집적 반도체 소자 제조 방법
KR970003702A (ko) 저도핑 드레인 구조의 모스 트랜지스터 제조 방법
KR970040299U (ko) 드레인플러그

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20050124

Year of fee payment: 4

LAPS Lapse due to unpaid annual fee