DE69633167D1 - Vertikales MOS-Halbleiterbauelement - Google Patents

Vertikales MOS-Halbleiterbauelement

Info

Publication number
DE69633167D1
DE69633167D1 DE69633167T DE69633167T DE69633167D1 DE 69633167 D1 DE69633167 D1 DE 69633167D1 DE 69633167 T DE69633167 T DE 69633167T DE 69633167 T DE69633167 T DE 69633167T DE 69633167 D1 DE69633167 D1 DE 69633167D1
Authority
DE
Germany
Prior art keywords
semiconductor device
vertical mos
mos semiconductor
vertical
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69633167T
Other languages
English (en)
Other versions
DE69633167T2 (de
Inventor
Tetsujiro Tsunoda
Takahiro Ito
Masakatsu Takashita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Publication of DE69633167D1 publication Critical patent/DE69633167D1/de
Application granted granted Critical
Publication of DE69633167T2 publication Critical patent/DE69633167T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H01L29/7395—Vertical transistors, e.g. vertical IGBT

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Semiconductor Integrated Circuits (AREA)
DE69633167T 1995-12-07 1996-12-06 Vertikales MOS-Halbleiterbauelement Expired - Lifetime DE69633167T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP31910695 1995-12-07
JP31910695 1995-12-07

Publications (2)

Publication Number Publication Date
DE69633167D1 true DE69633167D1 (de) 2004-09-23
DE69633167T2 DE69633167T2 (de) 2005-08-18

Family

ID=18106536

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69633167T Expired - Lifetime DE69633167T2 (de) 1995-12-07 1996-12-06 Vertikales MOS-Halbleiterbauelement

Country Status (4)

Country Link
US (1) US6002153A (de)
EP (1) EP0778620B1 (de)
KR (1) KR100253869B1 (de)
DE (1) DE69633167T2 (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6710405B2 (en) * 2001-01-17 2004-03-23 Ixys Corporation Non-uniform power semiconductor device
JP4572795B2 (ja) * 2005-02-10 2010-11-04 サンケン電気株式会社 絶縁ゲート型バイポーラトランジスタ
JP4179292B2 (ja) * 2005-02-21 2008-11-12 サンケン電気株式会社 半導体装置
EP2074613A4 (de) * 2006-08-14 2011-03-09 Ixys Corp Video- und inhaltsgesteuertes rücklicht
CN101933141B (zh) 2008-01-29 2013-02-13 富士电机株式会社 半导体装置
WO2010137158A1 (ja) 2009-05-28 2010-12-02 トヨタ自動車株式会社 半導体装置
US9911838B2 (en) 2012-10-26 2018-03-06 Ixys Corporation IGBT die structure with auxiliary P well terminal
US9024413B2 (en) * 2013-01-17 2015-05-05 Infineon Technologies Ag Semiconductor device with IGBT cell and desaturation channel structure
JP6284336B2 (ja) * 2013-10-17 2018-02-28 ルネサスエレクトロニクス株式会社 半導体装置
DE102015117994B8 (de) 2015-10-22 2018-08-23 Infineon Technologies Ag Leistungshalbleitertransistor mit einer vollständig verarmten Kanalregion
CN109244134A (zh) * 2018-09-04 2019-01-18 深圳市南硕明泰科技有限公司 一种场效应晶体管及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56110265A (en) * 1980-02-04 1981-09-01 Toshiba Corp Semiconductor device and its manufacture
JPS64769A (en) * 1987-02-16 1989-01-05 Nec Corp Vertical field-effect transistor
JP2715399B2 (ja) * 1990-07-30 1998-02-18 株式会社デンソー 電力用半導体装置
US5563437A (en) * 1992-02-21 1996-10-08 Motorola, Inc. Semiconductor device having a large sense voltage
JPH05299431A (ja) * 1992-04-16 1993-11-12 Toyota Autom Loom Works Ltd 電流検出機能付トランジスタ
JPH07161992A (ja) * 1993-10-14 1995-06-23 Fuji Electric Co Ltd 絶縁ゲート型バイポーラトランジスタ
JP3361874B2 (ja) * 1994-02-28 2003-01-07 三菱電機株式会社 電界効果型半導体装置

Also Published As

Publication number Publication date
EP0778620B1 (de) 2004-08-18
EP0778620A2 (de) 1997-06-11
EP0778620A3 (de) 1997-12-29
US6002153A (en) 1999-12-14
KR100253869B1 (ko) 2000-04-15
DE69633167T2 (de) 2005-08-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition