DE69837242D1 - Komplementäres MOS-Halbleiterbauelement - Google Patents
Komplementäres MOS-HalbleiterbauelementInfo
- Publication number
- DE69837242D1 DE69837242D1 DE69837242T DE69837242T DE69837242D1 DE 69837242 D1 DE69837242 D1 DE 69837242D1 DE 69837242 T DE69837242 T DE 69837242T DE 69837242 T DE69837242 T DE 69837242T DE 69837242 D1 DE69837242 D1 DE 69837242D1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor device
- complementary mos
- mos semiconductor
- complementary
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 230000000295 complement effect Effects 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
Landscapes
- Power Engineering (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Dram (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31398597 | 1997-11-14 | ||
JP31398597A JP3185730B2 (ja) | 1997-11-14 | 1997-11-14 | 相補型mos半導体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69837242D1 true DE69837242D1 (de) | 2007-04-19 |
DE69837242T2 DE69837242T2 (de) | 2007-12-20 |
Family
ID=18047847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69837242T Expired - Fee Related DE69837242T2 (de) | 1997-11-14 | 1998-11-13 | Komplementäres MOS-Halbleiterbauelement |
Country Status (7)
Country | Link |
---|---|
US (1) | US6307234B1 (de) |
EP (1) | EP0917201B1 (de) |
JP (1) | JP3185730B2 (de) |
KR (1) | KR100274562B1 (de) |
CN (1) | CN1217578A (de) |
DE (1) | DE69837242T2 (de) |
TW (1) | TW402820B (de) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001118935A (ja) * | 1999-10-19 | 2001-04-27 | Nec Corp | 半導体装置 |
JP2001230664A (ja) | 2000-02-15 | 2001-08-24 | Mitsubishi Electric Corp | 半導体集積回路 |
JP2011228725A (ja) * | 2000-06-05 | 2011-11-10 | Renesas Electronics Corp | 半導体装置 |
JP2002064150A (ja) | 2000-06-05 | 2002-02-28 | Mitsubishi Electric Corp | 半導体装置 |
US6946901B2 (en) * | 2001-05-22 | 2005-09-20 | The Regents Of The University Of California | Low-power high-performance integrated circuit and related methods |
US6642583B2 (en) * | 2001-06-11 | 2003-11-04 | Fuji Electric Co., Ltd. | CMOS device with trench structure |
JP2003110022A (ja) * | 2001-09-28 | 2003-04-11 | Mitsubishi Electric Corp | 半導体集積回路 |
US6639827B2 (en) * | 2002-03-12 | 2003-10-28 | Intel Corporation | Low standby power using shadow storage |
CN1774768A (zh) * | 2002-03-27 | 2006-05-17 | 加利福尼亚大学董事会 | 低功率高性能存储电路及相关方法 |
JP4052923B2 (ja) | 2002-10-25 | 2008-02-27 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4184104B2 (ja) | 2003-01-30 | 2008-11-19 | 株式会社ルネサステクノロジ | 半導体装置 |
JP4531340B2 (ja) * | 2003-02-27 | 2010-08-25 | ルネサスエレクトロニクス株式会社 | マルチプレクサセルのレイアウト構造 |
DE10342997A1 (de) * | 2003-09-17 | 2005-04-28 | Infineon Technologies Ag | Elektronischer Schaltkreis, Schaltkreis-Testanordnung und Verfahren zum Ermitteln der Funktionsfähigkeit eines elektronischen Schaltkreises |
JP4435553B2 (ja) * | 2003-12-12 | 2010-03-17 | パナソニック株式会社 | 半導体装置 |
KR100914553B1 (ko) * | 2006-06-21 | 2009-09-02 | 삼성전자주식회사 | 반도체 집적회로 |
JP2008103569A (ja) * | 2006-10-19 | 2008-05-01 | Nec Electronics Corp | 半導体装置 |
JP5162956B2 (ja) * | 2007-05-11 | 2013-03-13 | ソニー株式会社 | 半導体集積回路およびその動作方法 |
US7391232B1 (en) * | 2007-10-30 | 2008-06-24 | International Business Machines Corporation | Method and apparatus for extending lifetime reliability of digital logic devices through reversal of aging mechanisms |
US7391233B1 (en) * | 2007-10-30 | 2008-06-24 | International Business Machines Corporation | Method and apparatus for extending lifetime reliability of digital logic devices through removal of aging mechanisms |
US8194370B2 (en) * | 2008-11-25 | 2012-06-05 | Nuvoton Technology Corporation | Electrostatic discharge protection circuit and device |
KR101966522B1 (ko) * | 2017-05-19 | 2019-04-05 | 안소연 | 재료의 온도를 측정하는 거품기 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4475050A (en) * | 1981-12-21 | 1984-10-02 | Motorola, Inc. | TTL To CMOS input buffer |
US4672243A (en) * | 1985-05-28 | 1987-06-09 | American Telephone And Telegraph Company, At&T Bell Laboratories | Zero standby current TTL to CMOS input buffer |
JP2631335B2 (ja) | 1991-11-26 | 1997-07-16 | 日本電信電話株式会社 | 論理回路 |
JPH06350435A (ja) | 1993-06-02 | 1994-12-22 | Nippon Telegr & Teleph Corp <Ntt> | パワーダウン回路 |
JP3071612B2 (ja) * | 1993-07-15 | 2000-07-31 | 日本電気株式会社 | Cmos型半導体集積回路 |
JP3002371B2 (ja) | 1993-11-22 | 2000-01-24 | 富士通株式会社 | 半導体装置とその製造方法 |
JPH08191107A (ja) * | 1995-01-11 | 1996-07-23 | Mitsubishi Electric Corp | 半導体装置とその製造方法 |
TW435007B (en) | 1996-04-08 | 2001-05-16 | Hitachi Ltd | Semiconductor integrated circuit device |
JP4046383B2 (ja) * | 1997-04-01 | 2008-02-13 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
US5985706A (en) * | 1997-05-08 | 1999-11-16 | Advanced Micro Devices, Inc. | Polishing method for thin gates dielectric in semiconductor process |
US5929667A (en) * | 1997-06-10 | 1999-07-27 | International Business Machines Corporation | Method and apparatus for protecting circuits subjected to high voltage |
US6093947A (en) * | 1998-08-19 | 2000-07-25 | International Business Machines Corporation | Recessed-gate MOSFET with out-diffused source/drain extension |
-
1997
- 1997-11-14 JP JP31398597A patent/JP3185730B2/ja not_active Expired - Fee Related
-
1998
- 1998-11-09 TW TW087118633A patent/TW402820B/zh not_active IP Right Cessation
- 1998-11-12 CN CN98124728A patent/CN1217578A/zh active Pending
- 1998-11-12 US US09/190,010 patent/US6307234B1/en not_active Expired - Lifetime
- 1998-11-13 EP EP98250397A patent/EP0917201B1/de not_active Expired - Lifetime
- 1998-11-13 DE DE69837242T patent/DE69837242T2/de not_active Expired - Fee Related
- 1998-11-13 KR KR1019980048699A patent/KR100274562B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JPH11150193A (ja) | 1999-06-02 |
JP3185730B2 (ja) | 2001-07-11 |
CN1217578A (zh) | 1999-05-26 |
EP0917201A3 (de) | 2000-09-13 |
KR100274562B1 (ko) | 2000-12-15 |
KR19990045271A (ko) | 1999-06-25 |
DE69837242T2 (de) | 2007-12-20 |
EP0917201A2 (de) | 1999-05-19 |
US6307234B1 (en) | 2001-10-23 |
TW402820B (en) | 2000-08-21 |
EP0917201B1 (de) | 2007-03-07 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |