DE69839899D1 - MOS-Bildaufnahmevorrichtung - Google Patents
MOS-BildaufnahmevorrichtungInfo
- Publication number
- DE69839899D1 DE69839899D1 DE69839899T DE69839899T DE69839899D1 DE 69839899 D1 DE69839899 D1 DE 69839899D1 DE 69839899 T DE69839899 T DE 69839899T DE 69839899 T DE69839899 T DE 69839899T DE 69839899 D1 DE69839899 D1 DE 69839899D1
- Authority
- DE
- Germany
- Prior art keywords
- imaging device
- mos imaging
- mos
- imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/50—Control of the SSIS exposure
- H04N25/57—Control of the dynamic range
- H04N25/59—Control of the dynamic range by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/65—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
- H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/766—Addressed sensors, e.g. MOS or CMOS sensors comprising control or output lines used for a plurality of functions, e.g. for pixel output, driving, reset or power
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
Landscapes
- Engineering & Computer Science (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP26354597A JP3428875B2 (ja) | 1997-09-29 | 1997-09-29 | 光電変換装置 |
JP36108997A JP3487575B2 (ja) | 1997-12-26 | 1997-12-26 | 光電変換装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
DE69839899D1 true DE69839899D1 (de) | 2008-09-25 |
Family
ID=26546062
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69836608T Expired - Lifetime DE69836608T2 (de) | 1997-09-29 | 1998-09-28 | MOS-Bildaufnahmevorrichtung |
DE69839899T Expired - Lifetime DE69839899D1 (de) | 1997-09-29 | 1998-09-28 | MOS-Bildaufnahmevorrichtung |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69836608T Expired - Lifetime DE69836608T2 (de) | 1997-09-29 | 1998-09-28 | MOS-Bildaufnahmevorrichtung |
Country Status (6)
Country | Link |
---|---|
US (2) | US6670990B1 (de) |
EP (2) | EP1592068B1 (de) |
KR (1) | KR100283638B1 (de) |
CN (2) | CN1276514C (de) |
DE (2) | DE69836608T2 (de) |
TW (1) | TW421962B (de) |
Families Citing this family (137)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11103418A (ja) * | 1997-09-29 | 1999-04-13 | Canon Inc | 光電変換装置 |
JP3466886B2 (ja) | 1997-10-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
EP0928101A3 (de) | 1997-12-31 | 2001-05-02 | Texas Instruments Incorporated | CMOS-Matrixsensoren |
JP4305970B2 (ja) * | 1998-06-05 | 2009-07-29 | ソニー株式会社 | 固体撮像素子の駆動方法 |
JP4200545B2 (ja) | 1998-06-08 | 2008-12-24 | ソニー株式会社 | 固体撮像素子およびその駆動方法、並びにカメラシステム |
US6587142B1 (en) * | 1998-09-09 | 2003-07-01 | Pictos Technologies, Inc. | Low-noise active-pixel sensor for imaging arrays with high speed row reset |
US6532040B1 (en) * | 1998-09-09 | 2003-03-11 | Pictos Technologies, Inc. | Low-noise active-pixel sensor for imaging arrays with high speed row reset |
US6825878B1 (en) | 1998-12-08 | 2004-11-30 | Micron Technology, Inc. | Twin P-well CMOS imager |
US6781627B1 (en) * | 1999-06-24 | 2004-08-24 | Olympus Optical Co., Ltd. | Solid state imaging device and electric charge detecting apparatus used for the same |
DE19933162B4 (de) * | 1999-07-20 | 2004-11-11 | Institut für Mikroelektronik Stuttgart Stiftung des öffentlichen Rechts | Bildzelle, Bildsensor und Herstellungsverfahren hierfür |
US6489618B1 (en) * | 1999-07-30 | 2002-12-03 | Canon Kabushiki Kaisha | Radiation image pickup device |
US7324144B1 (en) * | 1999-10-05 | 2008-01-29 | Canon Kabushiki Kaisha | Solid image pickup device, image pickup system and method of driving solid image pickup device |
JP4164590B2 (ja) * | 1999-11-12 | 2008-10-15 | 本田技研工業株式会社 | 光センサ回路 |
JP3467013B2 (ja) * | 1999-12-06 | 2003-11-17 | キヤノン株式会社 | 固体撮像装置 |
KR100429571B1 (ko) * | 1999-12-28 | 2004-05-03 | 주식회사 하이닉스반도체 | 저전력화 및 화질 개선을 위한 단위 화소 회로 및 판독 회로를 갖는 이미지센서 |
US6965408B2 (en) * | 2000-02-28 | 2005-11-15 | Canon Kabushiki Kaisha | Solid-state image pickup device having a photoelectric conversion unit and a punch-through current suppression circuit |
FR2807570B1 (fr) | 2000-04-07 | 2003-08-15 | Suisse Electronique Microtech | Cellule active avec memoire analogique pour un capteur photosensible realise en technologie cmos |
SE518797C2 (sv) | 2000-07-19 | 2002-11-19 | Ericsson Telefon Ab L M | Effekt-LDMOS-transistor innefattande ett flertal parallellkopplade transistorsegment med olika tröskelspänningar |
JP2002044523A (ja) * | 2000-07-21 | 2002-02-08 | Mitsubishi Electric Corp | 半導体撮像素子 |
US7180798B2 (en) * | 2001-04-12 | 2007-02-20 | Fuji Electric Co., Ltd. | Semiconductor physical quantity sensing device |
EP1301028A1 (de) | 2001-10-05 | 2003-04-09 | STMicroelectronics Limited | Verbesserungen in oder in Bezug auf CMOS-Bildsensoren |
EP1472740B1 (de) * | 2002-01-24 | 2009-03-11 | Koninklijke Philips Electronics N.V. | Abbildungsvorrichtung |
EP1341377B1 (de) | 2002-02-27 | 2018-04-11 | Canon Kabushiki Kaisha | Signalverarbeitungsvorrichtung für Bildaufnahmevorrichtung |
JP3728260B2 (ja) * | 2002-02-27 | 2005-12-21 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
GB0208021D0 (en) * | 2002-04-05 | 2002-05-15 | Suisse Electronique Microtech | CMOS digital image sensor |
JP2004014911A (ja) * | 2002-06-10 | 2004-01-15 | Renesas Technology Corp | 半導体装置およびその製造方法 |
TWI289905B (en) * | 2002-07-23 | 2007-11-11 | Fujitsu Ltd | Image sensor and image sensor module |
US7405757B2 (en) | 2002-07-23 | 2008-07-29 | Fujitsu Limited | Image sensor and image sensor module |
US6744084B2 (en) * | 2002-08-29 | 2004-06-01 | Micro Technology, Inc. | Two-transistor pixel with buried reset channel and method of formation |
KR100482370B1 (ko) * | 2002-09-27 | 2005-04-13 | 삼성전자주식회사 | 게이트 산화막의 두께가 다른 반도체장치 |
JP4274533B2 (ja) * | 2003-07-16 | 2009-06-10 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP4514188B2 (ja) * | 2003-11-10 | 2010-07-28 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
JP4508619B2 (ja) * | 2003-12-03 | 2010-07-21 | キヤノン株式会社 | 固体撮像装置の製造方法 |
JP3793202B2 (ja) * | 2004-02-02 | 2006-07-05 | キヤノン株式会社 | 固体撮像装置 |
JP3890333B2 (ja) * | 2004-02-06 | 2007-03-07 | キヤノン株式会社 | 固体撮像装置 |
JP4067054B2 (ja) * | 2004-02-13 | 2008-03-26 | キヤノン株式会社 | 固体撮像装置および撮像システム |
US7423790B2 (en) * | 2004-03-18 | 2008-09-09 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus and contact-type image sensor |
DE602004017969D1 (de) * | 2004-06-05 | 2009-01-08 | St Microelectronics Res & Dev | Bildsensor mit geteilten Rücksetz-Signalen und Zeilenauswahl |
US7667250B2 (en) * | 2004-07-16 | 2010-02-23 | Aptina Imaging Corporation | Vertical gate device for an image sensor and method of forming the same |
US7087476B2 (en) * | 2004-07-28 | 2006-08-08 | Intel Corporation | Using different gate dielectrics with NMOS and PMOS transistors of a complementary metal oxide semiconductor integrated circuit |
JP4756839B2 (ja) * | 2004-09-01 | 2011-08-24 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP5089017B2 (ja) * | 2004-09-01 | 2012-12-05 | キヤノン株式会社 | 固体撮像装置及び固体撮像システム |
JP4971586B2 (ja) * | 2004-09-01 | 2012-07-11 | キヤノン株式会社 | 固体撮像装置 |
JP4416668B2 (ja) * | 2005-01-14 | 2010-02-17 | キヤノン株式会社 | 固体撮像装置、その制御方法及びカメラ |
JP2006197392A (ja) * | 2005-01-14 | 2006-07-27 | Canon Inc | 固体撮像装置、カメラ、及び固体撮像装置の駆動方法 |
JP4459064B2 (ja) * | 2005-01-14 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置、その制御方法及びカメラ |
JP4508891B2 (ja) * | 2005-01-28 | 2010-07-21 | キヤノン株式会社 | 光電変換装置、マルチチップ型イメージセンサ、密着型イメージセンサおよび画像読取装置 |
JP4497366B2 (ja) * | 2005-02-04 | 2010-07-07 | 国立大学法人東北大学 | 光センサおよび固体撮像装置 |
JP4452199B2 (ja) * | 2005-02-25 | 2010-04-21 | パナソニック株式会社 | 固体撮像装置およびその駆動方法 |
JP4434991B2 (ja) * | 2005-03-01 | 2010-03-17 | キヤノン株式会社 | イメージセンサ |
JP4459098B2 (ja) * | 2005-03-18 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP4794877B2 (ja) * | 2005-03-18 | 2011-10-19 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP4459099B2 (ja) | 2005-03-18 | 2010-04-28 | キヤノン株式会社 | 固体撮像装置及びカメラ |
JP4677258B2 (ja) | 2005-03-18 | 2011-04-27 | キヤノン株式会社 | 固体撮像装置及びカメラ |
KR100723485B1 (ko) * | 2005-04-11 | 2007-05-31 | 삼성전자주식회사 | 씨모스 이미지센서 및 그 제조 방법 |
KR100871714B1 (ko) * | 2005-12-05 | 2008-12-05 | 한국전자통신연구원 | 트랜스퍼 트랜지스터 및 이를 구비한 저잡음 이미지 센서 |
KR100673020B1 (ko) | 2005-12-20 | 2007-01-24 | 삼성전자주식회사 | 전계효과 소오스/드레인 영역을 가지는 반도체 장치 |
JP2007242697A (ja) * | 2006-03-06 | 2007-09-20 | Canon Inc | 撮像装置および撮像システム |
KR101255334B1 (ko) * | 2006-05-08 | 2013-04-16 | 페어차일드코리아반도체 주식회사 | 저 열저항 파워 모듈 및 그 제조방법 |
JP4804254B2 (ja) * | 2006-07-26 | 2011-11-02 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
JP4956084B2 (ja) * | 2006-08-01 | 2012-06-20 | キヤノン株式会社 | 光電変換装置及びそれを用いた撮像システム |
JP4185949B2 (ja) * | 2006-08-08 | 2008-11-26 | キヤノン株式会社 | 光電変換装置及び撮像装置 |
JP5123601B2 (ja) * | 2006-08-31 | 2013-01-23 | キヤノン株式会社 | 光電変換装置 |
JP5043388B2 (ja) * | 2006-09-07 | 2012-10-10 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP5173171B2 (ja) | 2006-09-07 | 2013-03-27 | キヤノン株式会社 | 光電変換装置、撮像装置及び信号読出方法 |
JP4928199B2 (ja) * | 2006-09-07 | 2012-05-09 | キヤノン株式会社 | 信号検出装置、信号検出装置の信号読み出し方法及び信号検出装置を用いた撮像システム |
US7692130B2 (en) | 2006-11-01 | 2010-04-06 | International Business Machines Corporation | CMOS imaging sensor having a third FET device with a gate terminal coupled to a second diffusion region of a first FET device and a first terminal coupled to a row select signal |
US7791010B2 (en) * | 2006-11-01 | 2010-09-07 | International Business Machines Corporation | CMOS image sensor having a third FET device with the gate terminal coupled to the diffusion region of a first FET device, the second terminal coupled to a column signal line, and the first terminal coupled to a row select signal |
JP4054839B1 (ja) | 2007-03-02 | 2008-03-05 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP4101281B1 (ja) * | 2007-03-15 | 2008-06-18 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
JP4110193B1 (ja) | 2007-05-02 | 2008-07-02 | キヤノン株式会社 | 固体撮像装置および撮像システム |
EP2037667B1 (de) * | 2007-09-14 | 2017-08-23 | Canon Kabushiki Kaisha | Bildabtastvorrichtung und Bildgebungssystem |
US8063964B2 (en) * | 2007-11-20 | 2011-11-22 | Altasens, Inc. | Dual sensitivity image sensor |
JP5004775B2 (ja) * | 2007-12-04 | 2012-08-22 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5142696B2 (ja) * | 2007-12-20 | 2013-02-13 | キヤノン株式会社 | 光電変換装置、及び光電変換装置を用いた撮像システム |
JP5268389B2 (ja) * | 2008-02-28 | 2013-08-21 | キヤノン株式会社 | 固体撮像装置、その駆動方法及び撮像システム |
JP5094498B2 (ja) | 2008-03-27 | 2012-12-12 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP5328207B2 (ja) * | 2008-04-01 | 2013-10-30 | キヤノン株式会社 | 固体撮像装置 |
JP4500862B2 (ja) * | 2008-04-11 | 2010-07-14 | キヤノン株式会社 | 固体撮像装置の駆動方法 |
US8026968B2 (en) * | 2008-04-11 | 2011-09-27 | Aptina Imaging Corporation | Method and apparatus providing dynamic boosted control signal for a pixel |
FR2930841B1 (fr) * | 2008-04-30 | 2010-08-13 | E2V Semiconductors | Capteur d'image a coins coupes avec un multiplexeur entre deux lignes adjacentes de pixels. |
JP2012090358A (ja) * | 2008-06-16 | 2012-05-10 | Norio Akamatsu | 電界効果発電装置 |
JP5161676B2 (ja) * | 2008-07-07 | 2013-03-13 | キヤノン株式会社 | 撮像装置及び撮像システム |
JP5283216B2 (ja) * | 2008-07-31 | 2013-09-04 | 国立大学法人静岡大学 | 高速電荷転送フォトダイオード、ロックインピクセル及び固体撮像装置 |
JP5288955B2 (ja) * | 2008-09-09 | 2013-09-11 | キヤノン株式会社 | 固体撮像装置、撮像システム、および固体撮像装置の駆動方法 |
JP5264379B2 (ja) * | 2008-09-12 | 2013-08-14 | キヤノン株式会社 | 撮像装置、撮像システム及び撮像装置の動作方法 |
KR101024740B1 (ko) * | 2008-09-30 | 2011-03-24 | 주식회사 동부하이텍 | 이미지센서 및 그 제조방법 |
JP4891308B2 (ja) | 2008-12-17 | 2012-03-07 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置を用いた撮像システム |
JP5478905B2 (ja) | 2009-01-30 | 2014-04-23 | キヤノン株式会社 | 固体撮像装置 |
JP5529613B2 (ja) | 2009-04-17 | 2014-06-25 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP5511220B2 (ja) | 2009-05-19 | 2014-06-04 | キヤノン株式会社 | 固体撮像装置 |
US8390335B2 (en) * | 2009-06-24 | 2013-03-05 | Futurewei Technologies, Inc. | Signal buffer amplifier |
KR101074795B1 (ko) * | 2009-07-03 | 2011-10-19 | 삼성모바일디스플레이주식회사 | 광 센싱 회로, 이를 포함하는 터치 패널, 및 광 센싱 회로의 구동 방법 |
JP5274420B2 (ja) * | 2009-09-24 | 2013-08-28 | キヤノン株式会社 | 光電変換装置および撮像システム |
JP5679653B2 (ja) | 2009-12-09 | 2015-03-04 | キヤノン株式会社 | 光電変換装置およびそれを用いた撮像システム |
JP5780711B2 (ja) | 2010-04-06 | 2015-09-16 | キヤノン株式会社 | 固体撮像装置 |
US20120002092A1 (en) * | 2010-06-30 | 2012-01-05 | Guidash Robert M | Low noise active pixel sensor |
JP6045136B2 (ja) | 2011-01-31 | 2016-12-14 | キヤノン株式会社 | 光電変換装置 |
KR101838894B1 (ko) * | 2011-07-08 | 2018-03-16 | 삼성전자주식회사 | 이미지 센서 및 이를 포함하는 이미지 처리 장치 |
JP5762199B2 (ja) | 2011-07-28 | 2015-08-12 | キヤノン株式会社 | 固体撮像装置 |
US8709883B2 (en) | 2011-08-19 | 2014-04-29 | Freescale Semiconductor, Inc. | Implant for performance enhancement of selected transistors in an integrated circuit |
JP5901186B2 (ja) | 2011-09-05 | 2016-04-06 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP5858695B2 (ja) | 2011-09-08 | 2016-02-10 | キヤノン株式会社 | 固体撮像装置及び固体撮像装置の駆動方法 |
JP5801665B2 (ja) | 2011-09-15 | 2015-10-28 | キヤノン株式会社 | 固体撮像装置、a/d変換器およびその制御方法 |
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JP5907500B2 (ja) * | 2011-10-06 | 2016-04-26 | 国立研究開発法人産業技術総合研究所 | 光電変換装置、光電変換アレイおよび撮像装置 |
JP5484422B2 (ja) | 2011-10-07 | 2014-05-07 | キヤノン株式会社 | 固体撮像装置 |
JP2013084744A (ja) * | 2011-10-07 | 2013-05-09 | Sony Corp | 固体撮像素子および電子機器 |
JP5901212B2 (ja) | 2011-10-07 | 2016-04-06 | キヤノン株式会社 | 光電変換システム |
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JP5930651B2 (ja) | 2011-10-07 | 2016-06-08 | キヤノン株式会社 | 固体撮像装置 |
US9093351B2 (en) * | 2012-03-21 | 2015-07-28 | Canon Kabushiki Kaisha | Solid-state imaging apparatus |
JP6319946B2 (ja) | 2013-04-18 | 2018-05-09 | キヤノン株式会社 | 固体撮像装置及び撮像システム |
JP6100074B2 (ja) | 2013-04-25 | 2017-03-22 | キヤノン株式会社 | 光電変換装置及び撮像システム |
JP6274788B2 (ja) | 2013-08-28 | 2018-02-07 | キヤノン株式会社 | 撮像装置、撮像システム及び撮像装置の駆動方法 |
JP5886806B2 (ja) | 2013-09-17 | 2016-03-16 | キヤノン株式会社 | 固体撮像装置 |
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JP6239975B2 (ja) | 2013-12-27 | 2017-11-29 | キヤノン株式会社 | 固体撮像装置及びそれを用いた撮像システム |
JP6541347B2 (ja) | 2014-03-27 | 2019-07-10 | キヤノン株式会社 | 固体撮像装置および撮像システム |
JP6548391B2 (ja) | 2014-03-31 | 2019-07-24 | キヤノン株式会社 | 光電変換装置および撮像システム |
JP6412328B2 (ja) | 2014-04-01 | 2018-10-24 | キヤノン株式会社 | 固体撮像装置およびカメラ |
JP6351404B2 (ja) | 2014-07-02 | 2018-07-04 | キヤノン株式会社 | 撮像装置及び撮像システム |
US9711558B2 (en) * | 2014-09-12 | 2017-07-18 | Panasonic Intellectual Property Management Co., Ltd. | Imaging device with photoelectric converter |
US9979916B2 (en) | 2014-11-21 | 2018-05-22 | Canon Kabushiki Kaisha | Imaging apparatus and imaging system |
WO2016179324A1 (en) * | 2015-05-04 | 2016-11-10 | Thin Film Electronics Asa | Moscap-based circuitry for wireless communication devices, and methods of making and using the same |
US9900539B2 (en) | 2015-09-10 | 2018-02-20 | Canon Kabushiki Kaisha | Solid-state image pickup element, and image pickup system |
US9716155B2 (en) * | 2015-12-09 | 2017-07-25 | International Business Machines Corporation | Vertical field-effect-transistors having multiple threshold voltages |
KR101679598B1 (ko) * | 2016-01-04 | 2016-11-25 | 주식회사 동부하이텍 | 이미지 센서 |
JP6740067B2 (ja) | 2016-09-16 | 2020-08-12 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP6750876B2 (ja) | 2016-10-07 | 2020-09-02 | キヤノン株式会社 | 固体撮像装置及びその駆動方法 |
JP2018082261A (ja) | 2016-11-15 | 2018-05-24 | キヤノン株式会社 | 撮像素子 |
JP6806553B2 (ja) | 2016-12-15 | 2021-01-06 | キヤノン株式会社 | 撮像装置、撮像装置の駆動方法及び撮像システム |
JP6871797B2 (ja) | 2017-04-24 | 2021-05-12 | キヤノン株式会社 | 光電変換装置 |
JP7299680B2 (ja) | 2018-08-23 | 2023-06-28 | キヤノン株式会社 | 撮像装置及び撮像システム |
US11425365B2 (en) | 2018-12-14 | 2022-08-23 | Canon Kabushiki Kaisha | Photoelectric conversion device, method of manufacturing photoelectric conversion device, and method of manufacturing semiconductor device |
CN112580399A (zh) * | 2019-09-29 | 2021-03-30 | 京东方科技集团股份有限公司 | 一种指纹识别电路及其驱动方法、显示面板、显示装置 |
WO2022126395A1 (zh) * | 2020-12-15 | 2022-06-23 | 深圳市大疆创新科技有限公司 | 图像传感器及其控制方法、图像处理器、成像装置 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0760888B2 (ja) | 1985-06-12 | 1995-06-28 | キヤノン株式会社 | 光電変換装置 |
JPH0654957B2 (ja) | 1985-11-13 | 1994-07-20 | キヤノン株式会社 | 光電変換装置 |
JPH0644619B2 (ja) | 1986-07-17 | 1994-06-08 | キヤノン株式会社 | 光電変換装置 |
JPS63100879A (ja) * | 1986-10-17 | 1988-05-02 | Hitachi Ltd | 固体撮像装置 |
US4866293A (en) | 1986-12-09 | 1989-09-12 | Canon Kabushiki Kaisha | Photoelectric converting apparatus to prevent the outflow of excess carriers |
EP0277016B1 (de) | 1987-01-29 | 1998-04-15 | Canon Kabushiki Kaisha | Photovoltaischer Wandler |
JPH01292856A (ja) * | 1988-05-20 | 1989-11-27 | Hitachi Ltd | 固体撮像装置 |
US6127692A (en) | 1989-08-04 | 2000-10-03 | Canon Kabushiki Kaisha | Photoelectric conversion apparatus |
CA2056087C (en) | 1990-11-27 | 1998-01-27 | Masakazu Morishita | Photoelectric converting device and information processing apparatus employing the same |
JP2913876B2 (ja) * | 1991-03-08 | 1999-06-28 | ソニー株式会社 | 固体撮像装置 |
US5453611A (en) | 1993-01-01 | 1995-09-26 | Canon Kabushiki Kaisha | Solid-state image pickup device with a plurality of photoelectric conversion elements on a common semiconductor chip |
JPH06334920A (ja) * | 1993-03-23 | 1994-12-02 | Nippon Hoso Kyokai <Nhk> | 固体撮像素子とその駆動方法 |
CA2182366C (en) * | 1994-02-11 | 2000-02-29 | Ifire Technology Corp. | Electromagnetic radiation imaging device using dual gate thin film transistors |
JPH08186241A (ja) | 1995-01-06 | 1996-07-16 | Canon Inc | 撮像素子と固体撮像装置 |
US5654537A (en) * | 1995-06-30 | 1997-08-05 | Symbios Logic Inc. | Image sensor array with picture element sensor testability |
WO1997007630A1 (fr) * | 1995-08-11 | 1997-02-27 | Kabushiki Kaisha Toshiba | Dispositif mos de prise d'image |
JP3559640B2 (ja) * | 1996-02-27 | 2004-09-02 | キヤノン株式会社 | 光電変換装置 |
US5869857A (en) * | 1997-04-07 | 1999-02-09 | Chen; Pao-Jung | CMOS photodetectors with wide range operating region |
US6043525A (en) * | 1997-04-07 | 2000-03-28 | Chen; Pao-Jung | High speed CMOS photodetectors with wide range operating region |
JP3673620B2 (ja) * | 1997-07-18 | 2005-07-20 | キヤノン株式会社 | 光電変換装置 |
EP0928101A3 (de) * | 1997-12-31 | 2001-05-02 | Texas Instruments Incorporated | CMOS-Matrixsensoren |
US6414292B1 (en) * | 1999-10-29 | 2002-07-02 | Intel Corporation | Image sensor with increased pixel density |
-
1998
- 1998-09-21 TW TW087115716A patent/TW421962B/zh active
- 1998-09-28 DE DE69836608T patent/DE69836608T2/de not_active Expired - Lifetime
- 1998-09-28 EP EP05076623A patent/EP1592068B1/de not_active Expired - Lifetime
- 1998-09-28 DE DE69839899T patent/DE69839899D1/de not_active Expired - Lifetime
- 1998-09-28 US US09/161,402 patent/US6670990B1/en not_active Expired - Lifetime
- 1998-09-28 EP EP98307838A patent/EP0905788B1/de not_active Expired - Lifetime
- 1998-09-29 CN CNB2003101186230A patent/CN1276514C/zh not_active Expired - Fee Related
- 1998-09-29 KR KR1019980040647A patent/KR100283638B1/ko not_active IP Right Cessation
- 1998-09-29 CN CNB98120788XA patent/CN1155207C/zh not_active Expired - Fee Related
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2003
- 2003-10-08 US US10/680,181 patent/US6946637B2/en not_active Expired - Fee Related
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DE69836608T2 (de) | 2007-09-27 |
EP1592068A3 (de) | 2006-12-27 |
CN1276514C (zh) | 2006-09-20 |
EP1592068A2 (de) | 2005-11-02 |
EP1592068B1 (de) | 2008-08-13 |
DE69836608D1 (de) | 2007-01-25 |
EP0905788A3 (de) | 2000-06-28 |
CN1213931A (zh) | 1999-04-14 |
KR100283638B1 (ko) | 2001-04-02 |
EP0905788A2 (de) | 1999-03-31 |
CN1155207C (zh) | 2004-06-23 |
EP0905788B1 (de) | 2006-12-13 |
CN1527392A (zh) | 2004-09-08 |
US6670990B1 (en) | 2003-12-30 |
TW421962B (en) | 2001-02-11 |
KR19990030274A (ko) | 1999-04-26 |
US20040065808A1 (en) | 2004-04-08 |
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