KR970004171A - 반도체장치 및 그 제조방법 - Google Patents
반도체장치 및 그 제조방법 Download PDFInfo
- Publication number
- KR970004171A KR970004171A KR1019960023701A KR19960023701A KR970004171A KR 970004171 A KR970004171 A KR 970004171A KR 1019960023701 A KR1019960023701 A KR 1019960023701A KR 19960023701 A KR19960023701 A KR 19960023701A KR 970004171 A KR970004171 A KR 970004171A
- Authority
- KR
- South Korea
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34313—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer having only As as V-compound, e.g. AlGaAs, InGaAs
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Optics & Photonics (AREA)
- Nanotechnology (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Biophysics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Plasma & Fusion (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP95-164124 | 1995-06-29 | ||
JP07164124A JP3135202B2 (ja) | 1995-06-29 | 1995-06-29 | 半導体装置,及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR970004171A true KR970004171A (ko) | 1997-01-29 |
KR100253933B1 KR100253933B1 (ko) | 2000-05-01 |
Family
ID=15787207
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960023701A KR100253933B1 (ko) | 1995-06-29 | 1996-06-25 | 반도체장치 및 그 제조방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5673283A (ko) |
JP (1) | JP3135202B2 (ko) |
KR (1) | KR100253933B1 (ko) |
DE (1) | DE19625413A1 (ko) |
GB (1) | GB2302986B (ko) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11112079A (ja) * | 1997-09-30 | 1999-04-23 | Mitsubishi Electric Corp | 応力補償型半導体レーザ |
US6330263B1 (en) | 1998-05-06 | 2001-12-11 | Sarnoff Corporation | Laser diode having separated, highly-strained quantum wells |
US6603784B1 (en) * | 1998-12-21 | 2003-08-05 | Honeywell International Inc. | Mechanical stabilization of lattice mismatched quantum wells |
JP5475398B2 (ja) | 2009-05-15 | 2014-04-16 | 日本オクラロ株式会社 | 半導体発光素子 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0831657B2 (ja) * | 1988-04-07 | 1996-03-27 | 日本電気株式会社 | 光増幅器 |
US5048036A (en) * | 1989-09-18 | 1991-09-10 | Spectra Diode Laboratories, Inc. | Heterostructure laser with lattice mismatch |
US5068867A (en) * | 1989-11-20 | 1991-11-26 | Hughes Aircraft Company | Coupled quantum well strained superlattice structure and optically bistable semiconductor laser incorporating the same |
US5208182A (en) * | 1991-11-12 | 1993-05-04 | Kopin Corporation | Dislocation density reduction in gallium arsenide on silicon heterostructures |
JPH0669593A (ja) * | 1992-08-20 | 1994-03-11 | Fuji Xerox Co Ltd | 半導体レーザ装置 |
JPH0677592A (ja) * | 1992-08-28 | 1994-03-18 | Hitachi Ltd | 半導体レーザ素子 |
-
1995
- 1995-06-29 JP JP07164124A patent/JP3135202B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-01 GB GB9604492A patent/GB2302986B/en not_active Expired - Fee Related
- 1996-03-08 US US08/613,237 patent/US5673283A/en not_active Expired - Lifetime
- 1996-06-25 DE DE19625413A patent/DE19625413A1/de not_active Ceased
- 1996-06-25 KR KR1019960023701A patent/KR100253933B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
GB2302986B (en) | 1997-07-16 |
US5673283A (en) | 1997-09-30 |
KR100253933B1 (ko) | 2000-05-01 |
DE19625413A1 (de) | 1997-01-02 |
GB9604492D0 (en) | 1996-05-01 |
JPH0918089A (ja) | 1997-01-17 |
GB2302986A (en) | 1997-02-05 |
JP3135202B2 (ja) | 2001-02-13 |
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A201 | Request for examination | ||
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E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20101223 Year of fee payment: 12 |
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LAPS | Lapse due to unpaid annual fee |