KR970004011A - 반도체기억장치 및 그 제조방법 - Google Patents

반도체기억장치 및 그 제조방법 Download PDF

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Publication number
KR970004011A
KR970004011A KR1019960020031A KR19960020031A KR970004011A KR 970004011 A KR970004011 A KR 970004011A KR 1019960020031 A KR1019960020031 A KR 1019960020031A KR 19960020031 A KR19960020031 A KR 19960020031A KR 970004011 A KR970004011 A KR 970004011A
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KR
South Korea
Prior art keywords
manufacturing
memory device
semiconductor memory
semiconductor
memory
Prior art date
Application number
KR1019960020031A
Other languages
English (en)
Other versions
KR100322216B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of KR970004011A publication Critical patent/KR970004011A/ko
Application granted granted Critical
Publication of KR100322216B1 publication Critical patent/KR100322216B1/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/014—Capacitor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/135—Removal of substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/977—Thinning or removal of substrate
KR1019960020031A 1995-06-05 1996-06-05 반도체 기억 장치 및 그 제조 방법 KR100322216B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP95-137968 1995-06-05
JP13796895 1995-06-05

Publications (2)

Publication Number Publication Date
KR970004011A true KR970004011A (ko) 1997-01-29
KR100322216B1 KR100322216B1 (ko) 2002-06-22

Family

ID=15210955

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019960020031A KR100322216B1 (ko) 1995-06-05 1996-06-05 반도체 기억 장치 및 그 제조 방법

Country Status (2)

Country Link
US (3) US5776789A (ko)
KR (1) KR100322216B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210069982A (ko) 2019-12-04 2021-06-14 현대오토솔루션(주) 서로 다른 물성을 가진 차량용 충격보강재 및 이것의 제조 방법

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* Cited by examiner, † Cited by third party
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US6831322B2 (en) * 1995-06-05 2004-12-14 Fujitsu Limited Semiconductor memory device and method for fabricating the same
US5776789A (en) * 1995-06-05 1998-07-07 Fujitsu Limited Method for fabricating a semiconductor memory device
US6191007B1 (en) * 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
KR100267013B1 (ko) * 1998-05-27 2000-09-15 윤종용 반도체 장치 및 그의 제조 방법
US6423596B1 (en) * 1998-09-29 2002-07-23 Texas Instruments Incorporated Method for two-sided fabrication of a memory array
KR20000027628A (ko) * 1998-10-28 2000-05-15 김영환 역 스택 캐패시터 셀 구조 에스오아이(soi) 소자 및 제조방법
US6465331B1 (en) * 2000-08-31 2002-10-15 Micron Technology, Inc. DRAM fabricated on a silicon-on-insulator (SOI) substrate having bi-level digit lines
JP2002197866A (ja) * 2000-09-05 2002-07-12 Seiko Epson Corp 表示用ドライバｉｃ
FR2848724B1 (fr) * 2002-12-13 2005-04-15 St Microelectronics Sa Connexions enterrees dans un substrat de circuit integre
JP4319078B2 (ja) * 2004-03-26 2009-08-26 シャープ株式会社 半導体装置の製造方法
US7235838B2 (en) * 2004-06-30 2007-06-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device substrate with embedded capacitor
US10170668B2 (en) * 2011-06-21 2019-01-01 Micron Technology, Inc. Solid state lighting devices with improved current spreading and light extraction and associated methods

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JP2743391B2 (ja) * 1988-08-25 1998-04-22 ソニー株式会社 半導体メモリの製造方法
US4920065A (en) * 1988-10-31 1990-04-24 International Business Machines Corporation Method of making ultra dense dram cells
US5060034A (en) * 1988-11-01 1991-10-22 Casio Computer Co., Ltd. Memory device using thin film transistors having an insulation film with si/n composition ratio of 0.85 to 1.1
US4988673A (en) * 1989-08-02 1991-01-29 The United States Of America As Represented By The Secretary Of The Navy Method for producing silver coated superconducting ceramic powder
JP2528731B2 (ja) * 1990-01-26 1996-08-28 三菱電機株式会社 半導体記憶装置およびその製造方法
JP3003188B2 (ja) * 1990-09-10 2000-01-24 ソニー株式会社 半導体メモリ及びその製造方法
US5057888A (en) * 1991-01-28 1991-10-15 Micron Technology, Inc. Double DRAM cell
JPH06104410A (ja) * 1991-10-31 1994-04-15 Sony Corp Ｓｏｉ構造の形成方法
JP3322936B2 (ja) * 1992-03-19 2002-09-09 株式会社東芝 半導体記憶装置
KR100289348B1 (ko) * 1992-05-25 2001-12-28 이데이 노부유끼 절연기판실리콘반도체장치와그제조방법
JPH06275803A (ja) * 1993-03-18 1994-09-30 Hitachi Ltd 半導体装置及びその製造方法
JPH06283683A (ja) * 1993-03-30 1994-10-07 Sony Corp 半導体装置およびその製造方法
JPH07130871A (ja) * 1993-06-28 1995-05-19 Toshiba Corp 半導体記憶装置
JPH0729992A (ja) * 1993-07-13 1995-01-31 Sony Corp ダイナミックｒａｍのメモリセル構造およびその製造方法
JP3301170B2 (ja) * 1993-08-09 2002-07-15 ソニー株式会社 半導体装置の製法
JPH0786296A (ja) 1993-09-10 1995-03-31 Toshiba Corp 高速バイポーラトランジスタの製造方法
US5442584A (en) * 1993-09-14 1995-08-15 Goldstar Electron Co., Ltd. Semiconductor memory device and method for fabricating the same dynamic random access memory device construction
JPH0786596A (ja) * 1993-09-20 1995-03-31 Fujitsu Ltd 半導体装置およびその製造方法
US5776789A (en) * 1995-06-05 1998-07-07 Fujitsu Limited Method for fabricating a semiconductor memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210069982A (ko) 2019-12-04 2021-06-14 현대오토솔루션(주) 서로 다른 물성을 가진 차량용 충격보강재 및 이것의 제조 방법

Also Published As

Publication number Publication date
US5776789A (en) 1998-07-07
US20020056866A1 (en) 2002-05-16
KR100322216B1 (ko) 2002-06-22
US6472703B1 (en) 2002-10-29

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